IRL5NJ024 [INFINEON]
LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5); 逻辑电平HEXFET功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRL5NJ024 |
| 厂家： | 
Infineon |
| 描述： | LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 文件： | 总7页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93955A
LOGIC LEVEL
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRL5NJ024
55V, N-CHANNEL
Product Summary
Part Number
BV
DSS
RDS(on)
ID
IRL5NJ024
55V
0.06Ω
17A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
Logic Level Gate Drive
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
17
11
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
68
DM
@ T = 25°C
P
35
W
W/°C
V
D
C
Linear Derating Factor
0.28
±16
56
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
11
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
3.5
mJ
V/ns
AR
dv/dt
4.3
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
2.6
For footnotes refer to the last page
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1
7/13/01
IRL5NJ024
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.060
––– ––– 0.075
––– ––– 0.105
VGS = 10V, ID = 11A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = 5.0V, ID = 11A
VGS = 4.0V, ID = 9.0A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 11 A
VGS(th)
gfs
Gate Threshold Voltage
1.0
6.5
––– 2.0
––– –––
V
S
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 15
––– ––– 3.7
––– ––– 8.5
––– ––– 11
––– ––– 133
––– ––– 35
––– ––– 66
VDS = 55V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 44V, VGS = 0V, TJ = 125°C
VGS = 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -16V
Qg
ID = 11A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V
VDD = 28V
ID = 11A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12 Ω
VGS = 5.0V
L
S
+ L
Total Inductance
–––
4.0 ––– nH
D
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitanc
––– 514 –––
––– 137 –––
VGS = 0V, VDS = 25V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
51 –––
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
17
68
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Q
Diode Forward Voltage
—
—
—
—
—
—
1.3
90
200
V
T = 25°C, I = 11A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
T = 25°C, I = 11A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 25V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
3.57
thJC
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRL5NJ024
100
10
1
1000
100
10
VGS
15V
12V
10V
7.0V
5.0V
4.5V
2.7V
VGS
15V
12V
10V
7.0V
5.0V
4.5V
2.7V
TOP
TOP
BOTTOM 2.0V
BOTTOM 2.0V
1
2.0V
2.0V
0.1
0.01
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
17A
=
I
°
T = 25 C
D
J
°
T = 150 C
J
= V
25V
V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
2.0
3.0
4.0
5.0
6.0
7.0 8.0 9.0 10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRL5NJ024
1000
800
600
400
200
12
10
8
V
= 0V,
f = 1MHz
gd , ds
GS
I = 11A
D
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
C
= C + C
C
SHORTED
iss
gs
C
= C
gd
rss
C
= C + C
ds
oss
gd
C
iss
6
4
C
oss
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
0
4
8
12
16
20
24
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
°
T = 25 C
J
1
00µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
0ms
V
= 0 V
GS
0.1
0.2
0.1
0.6
1.0
1.4
1.8
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRL5NJ024
RD
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
0.05
1
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
thJC C
J
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL5NJ024
100
80
60
40
20
0
I
D
TOP
5.0A
7.0A
BOTTOM 11A
15V
DRIVER
L
V
D S
D.U .T
.
R
G
+
V
D D
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
5.0V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRL5NJ024
Footnotes:
Repetitive Rating; Pulse width limited by
I
SD
≤ 11A, di/dt ≤ 230 A/µs,
≤ 55V, T ≤ 150°C
maximum junction temperature.
V
DD
J
V
= 25 V, Starting T = 25°C, L=0.9mH
J
DD
Peak I
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
=11A, V
= 5.0 V, R = 25Ω
AS
GS
G
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
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7
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