Q62702-F1056 [INFINEON]
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage); NPN硅高压晶体管(适用于视频输出级中的电视机和开关电源的高击穿电压)的![Q62702-F1056](http://pdffile.icpdf.com/pdf1/p00089/img/icpdf/Q62702_467533_icpdf.jpg)
型号: | Q62702-F1056 |
厂家: | ![]() |
描述: | NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
文件: | 总4页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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NPN Silicon High-Voltage Transistors
BFN 16
BFN 18
● Suitable for video output stages in TV sets
and switching power supplies
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BFN 17, BFN 19 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BFN 16
BFN 18
DD
DE
Q62702-F885
Q62702-F1056
B
C
E
SOT-89
Maximum Ratings
Parameter
Symbol
Values
Unit
BFN 16
250
BFN 18
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
300
V
V
250
300
V
5
I
I
I
I
C
200
500
100
200
1
mA
Peak collector current
Base current
CM
B
Peak base current
BM
Total power dissipation, T
S
=130 ˚C
Ptot
W
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 75
≤ 20
K/W
R
Junction - soldering point
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BFN 16
BFN 18
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 1 mA
BFN 16
BFN 18
250
300
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BFN 16
BFN 18
250
300
–
–
–
–
Emitter-base breakdown voltage
= 100 µA
5
–
–
IE
Collector-base cutoff current
ICB0
V
V
V
V
CB = 200 V
CB = 250 V
CB = 200 V, T
CB = 250 V, T
BFN 16
BFN 18
BFN 16
BFN 18
–
–
–
–
–
–
–
–
100
100
20
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
20
Emitter-base cutoff current
IEB0
–
–
100
nA
VEB = 3 V
DC current gain
h
FE
–
IC
IC
IC
= 1 mA, VCE = 10 V
= 10 mA, VCE = 10 V1)
= 30 mA, VCE = 10 V1)
25
40
40
30
–
–
–
–
–
–
–
–
BFN 16
BFN 18
Collector-emitter saturation voltage1)
V
CEsat
BEsat
V
–
–
–
–
0.4
0.5
IC
= 20 mA, I
B
= 2 mA
BFN 16
BFN 18
Base-emitter saturation voltage1)
= 20 mA, I = 2 mA
V
–
–
0.9
IC
B
AC characteristics
Transition frequency
f
T
–
–
70
–
–
MHz
pF
IC
= 20 mA, VCE = 10 V, f = 20 MHz
Output capacitance
C
obo
1.5
VCB = 30 V, f = 1 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BFN 16
BFN 18
Total power dissipation Ptot = f (T
A
*; TS
)
Operating range I
C
= f (VCE0)
* Package mounted on epoxy
TA
= 25 ˚C, D = 0
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Collector current I = f (VBE)
C
VCE = 10 V
Semiconductor Group
3
BFN 16
BFN 18
Transition frequency f
T
= f (I
C
)
Collector cutoff current ICB0 = f (T
VCB = 200 V
A
)
V
CE = 10 V
DC current gain hFE = f (I )
C
V
CE = 10 V
Semiconductor Group
4
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