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Q62702-F1059 [INFINEON]

PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage); PNP硅高压晶体管（适用于视频输出级中的电视机和开关电源的高击穿电压）的
Q62702-F1059
型号： Q62702-F1059
厂家： Infineon    Infineon
描述：

PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
PNP硅高压晶体管（适用于视频输出级中的电视机和开关电源的高击穿电压）的

晶体 开关 晶体管 电视 高压
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PNP Silicon High-Voltage Transistor  
BFN 21  
● Suitable for video output stages in TV sets  
and switching power supplies  
● High breakdown voltage  
● Low collector-emitter saturation voltage  
● Low capacitance  
● Complementary type: BFN 20 (NPN)  
Package1)  
SOT-89  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BFN 21  
DF  
Q62702-F1059  
B
C
E
Maximum Ratings  
Parameter  
Symbol  
Values  
300  
300  
300  
5
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage, RBE = 2.7 kΩ  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
CER  
EB0  
V
V
V
V
IC  
50  
mA  
Peak collector current  
I
CM  
100  
1
P
tot  
W
Total power dissipation, T = 120 ˚C  
S
Junction temperature  
Tj  
150  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
≤ 90  
≤ 30  
K/W  
Junction - soldering point  
R
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1
BFN 21  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
V
V
V
V
(BR)CE0  
(BR)CB0  
(BR)CER  
(BR)EB0  
300  
300  
300  
5
–
–
–
–
–
–
–
–
V
IC  
= 1 mA  
Collector-base breakdown voltage  
= 10 µA  
Collector-emitter breakdown voltage  
= 10 µA, RBE = 2.7 kΩ  
Emitter-base breakdown voltage  
= 10 µA  
Collector-base cutoff current  
IC  
IC  
IE  
ICB0  
ICER  
IEB0  
VCB = 250 V  
–
–
–
–
100  
20  
nA  
µA  
V
CB = 250 V, T  
A
= 150 ˚C  
Collector cutoff current  
µA  
V
V
CE = 300 V, RBE = 2.7 kΩ  
CE = 300 V, T = 150 ˚C, RBE = 2.7 kΩ  
–
–
–
–
1
50  
A
Emitter-base cutoff current  
–
–
–
–
–
10  
–
VEB = 5 V  
DC current gain1)  
= 25 mA, VCE = 20 V  
h
FE  
40  
–
–
IC  
Collector-emitter saturation voltage1)  
= 10 mA, I = 1 mA  
V
V
CEsat  
BEsat  
0.5  
1
V
IC  
B
Base-emitter saturation voltage1)  
= 10 mA, I = 1 mA  
–
IC  
B
AC characteristics  
Transition frequency  
f
T
–
–
100  
0.8  
–
–
MHz  
pF  
IC  
= 10 mA, VCE = 10 V, f = 20 MHz  
Output capacitance  
C
obo  
VCB = 30 V, f= 1 MHz  
1)  
Pulse test conditions: t ≤ 300 µs, D = 2 %.  
Semiconductor Group  
2
BFN 21  
Total power dissipation Ptot = f (T  
* Package mounted on epoxy  
A
*; TS  
)
Output capacitance Cobo = f (VCE  
f= 1 MHz  
)
Permissible pulse load Ptot max / Ptot DC = f (t  
p)  
Transition frequency f  
T
= f (I )  
C
V
CE = 10 V  
Semiconductor Group  
3
BFN 21  
Collector current I  
C
= f (VBE  
)
DC current gain hFE = f (I )  
C
V
CE = 20 V  
VCE = 20 V  
Collector cutoff current ICB0 = f (T )  
A
V
CB = 250 V  
Semiconductor Group  
4

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