IS9-1845ASRH-8 [INTERSIL]
Single Event Radiation Hardened High Speed, Current Mode PWM; 单粒子抗辐射的高速,电流模式PWM型号: | IS9-1845ASRH-8 |
厂家: | Intersil |
描述: | Single Event Radiation Hardened High Speed, Current Mode PWM |
文件: | 总2页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IS-1845ASRH
®
Data Sheet
October 2003
FN9001.3
Single Event Radiation Hardened
High Speed, Current Mode PWM
Features
• Electrically Screened to DSCC SMD # 5962-01509
• QML Qualified per MIL-PRF-38535 Requirements
The IS-1845ASRH is designed to be
used in switching power supplies
operating in current-mode. The
rising edge of the on-chip oscillator
TM
• Radiation Environment
- Total Dose . . . . . . . . . . . . . . . . . . . . 300 krad(SI) (Max)
- SEL Immune. . . . . . . . . . . . . . . . . Dielectrically Isolated
turns on the output. Turn-off is controlled by the current
sense comparator and occurs when the sensed current
reaches a peak controlled by the error amplifier.
2
- SEU Immune . . . . . . . . . . . . . . . . . . . . 35MeV/mg/cm
2
-6
2
- SEU Cross-Section at 89MeV/mg/cm . . . . 5 x 10 cm
Constructed with Intersil’s Rad Hard Silicon Gate (RSG)
dielectrically isolated BiCMOS process, these devices are
immune to single event latch-up and have been specifically
designed to provide a high level of immunity to single event
transients. All specified parameters are guaranteed and
tested for 300krad(Si) total dose performance.
• Low Start-up Current . . . . . . . . . . . . . . . . . . . 100µA (Typ)
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . 80ns (Typ)
• Supply Voltage Range . . . . . . . . . . . . . . . . . . . 12V to 20V
• High Output Drive. . . . . . . . . . . . . . . . . . . . 1A (Peak, Typ)
• Under Voltage Lockout. .8.8V Start (Typ), 8.2V Stop (Typ)
Detailed Electrical Specifications for these devices are
contained in SMD 5962-01509. A “hot-link” is provided on
our website for downloading the SMD.
Applications
• Current-Mode Switching Power Supplies
• Control of High Current FET Drivers
• Motor Speed and Direction Control
Pinouts
IS7-1845ASRH (CDIP2-T8 SBDIP)
TOP VIEW
Ordering Information
COMP
VFB
1
2
3
4
8
7
6
5
VREF
VCC
OUT
GND
INTERNAL
TEMP. RANGE
o
ORDERING NUMBER
5962F0150901VPC
5962F0150901QPC
5962F0150901VXC
5962F0150901QXC
IS7-1845ASRH/Proto
IS9-1845ASRH/Proto
MKT. NUMBER
( C)
ISENSE
RTCT
IS7-1845ASRH-Q
IS7-1845ASRH-8
IS9-1845ASRH-Q
IS9-1845ASRH-8
IS1-1845ASRH/Proto
IS9-1845ASRH/Proto
-50 to 125
-50 to 125
-50 to 125
-50 to 125
-50 to 125
-50 to 125
IS9-1845ASRH (FLATPACK)
TOP VIEW
NC
COMP
VFB
1
2
3
4
5
6
7
8
9
NC
18
17
VREF
VCC
VC
16
15
14
13
12
11
10
NC
NC
OUT
NC
NC
ISENSE
RTCT
NC
GND
OSCGND
NC
NOTES:
1. Grounding the Comp pin does not inhibit the output. The output
may be inhibited by applying >1.2V to the ISENSE pin.
2. This part should be operated with CT=3.3nF and RT=10k timing
components only.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright © Intersil Americas Inc. 2003. All Rights Reserved.
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IS-1845ASRH
Substrate
Die Characteris tics
Radiation Hardened Silicon Gate,
Dielectric Isolation
DIE DIMENSIONS
3090µm x 4080µm (121.6 mils x 159.0 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
Backside Finish
Silicon
INTERFACE MATERIALS
Glassivation
ASSEMBLY RELATED INFORMATION
Substrate Potential
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kA ± 1.0kA
Unbiased (DI)
Top Metallization
ADDITIONAL INFORMATION
Worst Case Current Density
Type: AlSiCu
Thickness: 16.0kA ± 2kA
5
2
<2.0 x 10 A/cm
Transistor Count
582
Metallization Mas k Layout
IS-1845ASRH
ISENSE
VFB
COMP
RTCT
OSCGND
VREF
GND
GND
OUT
VC
VCC
NOTES:
3. Both the GND pads must be bonded to ground.
4. The OUT double-sized bond pad must be double bonded for
current sharing purposes.
5. The OSCGND double-sized bond pad must be double bonded to
ground for current sharing purposes.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
2
相关型号:
IS9-1845ASRH/PROTO
1A SWITCHING CONTROLLER, 500kHz SWITCHING FREQ-MAX, CDFP18, CERAMIC, DFP-18
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