IS9-1845ASRH-8 [INTERSIL]

Single Event Radiation Hardened High Speed, Current Mode PWM; 单粒子抗辐射的高速,电流模式PWM
IS9-1845ASRH-8
型号: IS9-1845ASRH-8
厂家: Intersil    Intersil
描述:

Single Event Radiation Hardened High Speed, Current Mode PWM
单粒子抗辐射的高速,电流模式PWM

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IS-1845ASRH  
®
Data Sheet  
October 2003  
FN9001.3  
Single Event Radiation Hardened  
High Speed, Current Mode PWM  
Features  
• Electrically Screened to DSCC SMD # 5962-01509  
• QML Qualified per MIL-PRF-38535 Requirements  
The IS-1845ASRH is designed to be  
used in switching power supplies  
operating in current-mode. The  
rising edge of the on-chip oscillator  
TM  
• Radiation Environment  
- Total Dose . . . . . . . . . . . . . . . . . . . . 300 krad(SI) (Max)  
- SEL Immune. . . . . . . . . . . . . . . . . Dielectrically Isolated  
turns on the output. Turn-off is controlled by the current  
sense comparator and occurs when the sensed current  
reaches a peak controlled by the error amplifier.  
2
- SEU Immune . . . . . . . . . . . . . . . . . . . . 35MeV/mg/cm  
2
-6  
2
- SEU Cross-Section at 89MeV/mg/cm . . . . 5 x 10 cm  
Constructed with Intersil’s Rad Hard Silicon Gate (RSG)  
dielectrically isolated BiCMOS process, these devices are  
immune to single event latch-up and have been specifically  
designed to provide a high level of immunity to single event  
transients. All specified parameters are guaranteed and  
tested for 300krad(Si) total dose performance.  
• Low Start-up Current . . . . . . . . . . . . . . . . . . . 100µA (Typ)  
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . 80ns (Typ)  
• Supply Voltage Range . . . . . . . . . . . . . . . . . . . 12V to 20V  
• High Output Drive. . . . . . . . . . . . . . . . . . . . 1A (Peak, Typ)  
• Under Voltage Lockout. .8.8V Start (Typ), 8.2V Stop (Typ)  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-01509. A “hot-link” is provided on  
our website for downloading the SMD.  
Applications  
• Current-Mode Switching Power Supplies  
• Control of High Current FET Drivers  
• Motor Speed and Direction Control  
Pinouts  
IS7-1845ASRH (CDIP2-T8 SBDIP)  
TOP VIEW  
Ordering Information  
COMP  
VFB  
1
2
3
4
8
7
6
5
VREF  
VCC  
OUT  
GND  
INTERNAL  
TEMP. RANGE  
o
ORDERING NUMBER  
5962F0150901VPC  
5962F0150901QPC  
5962F0150901VXC  
5962F0150901QXC  
IS7-1845ASRH/Proto  
IS9-1845ASRH/Proto  
MKT. NUMBER  
( C)  
ISENSE  
RTCT  
IS7-1845ASRH-Q  
IS7-1845ASRH-8  
IS9-1845ASRH-Q  
IS9-1845ASRH-8  
IS1-1845ASRH/Proto  
IS9-1845ASRH/Proto  
-50 to 125  
-50 to 125  
-50 to 125  
-50 to 125  
-50 to 125  
-50 to 125  
IS9-1845ASRH (FLATPACK)  
TOP VIEW  
NC  
COMP  
VFB  
1
2
3
4
5
6
7
8
9
NC  
18  
17  
VREF  
VCC  
VC  
16  
15  
14  
13  
12  
11  
10  
NC  
NC  
OUT  
NC  
NC  
ISENSE  
RTCT  
NC  
GND  
OSCGND  
NC  
NOTES:  
1. Grounding the Comp pin does not inhibit the output. The output  
may be inhibited by applying >1.2V to the ISENSE pin.  
2. This part should be operated with CT=3.3nF and RT=10k timing  
components only.  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2003. All Rights Reserved.  
All other trademarks mentioned are the property of their respective owners.  
IS-1845ASRH  
Substrate  
Die Characteris tics  
Radiation Hardened Silicon Gate,  
Dielectric Isolation  
DIE DIMENSIONS  
3090µm x 4080µm (121.6 mils x 159.0 mils)  
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)  
Backside Finish  
Silicon  
INTERFACE MATERIALS  
Glassivation  
ASSEMBLY RELATED INFORMATION  
Substrate Potential  
Type: Phosphorus Silicon Glass (PSG)  
Thickness: 8.0kA ± 1.0kA  
Unbiased (DI)  
Top Metallization  
ADDITIONAL INFORMATION  
Worst Case Current Density  
Type: AlSiCu  
Thickness: 16.0kA ± 2kA  
5
2
<2.0 x 10 A/cm  
Transistor Count  
582  
Metallization Mas k Layout  
IS-1845ASRH  
ISENSE  
VFB  
COMP  
RTCT  
OSCGND  
VREF  
GND  
GND  
OUT  
VC  
VCC  
NOTES:  
3. Both the GND pads must be bonded to ground.  
4. The OUT double-sized bond pad must be double bonded for  
current sharing purposes.  
5. The OSCGND double-sized bond pad must be double bonded to  
ground for current sharing purposes.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
2

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