IXBH20N160 [IXYS]
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor; 高压BIMOSFET单片双极型晶体管MOS
| 型号： | IXBH20N160 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage BIMOSFETTM
Monolithic Bipolar
IXBH 20N140 VCES = 1400/1600V
IXBH 20N160 IC25 = 20 A
MOSTransistor
VCE(sat) = 4.7 V typ.
N-Channel, Enhancement Mode
tfi
= 40 ns
C
E
TO-247 AD
G
G
C
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Conditions
Maximum Ratings
Features
20N140
20N160
• Internationalstandardpackage
JEDEC TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
1400
1400
1600
1600
V
V
• HighVoltageBIMOSFETTM
TJ = 25°C to 150°C; RGE = 1 MW
- replaceshighvoltageDarlingtons
and series connected MOSFETs
- lower effective RDS(on)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
• Monolithicconstruction
IC25
IC90
ICM
TC = 25°C,
20
13
26
A
A
A
- highblockingvoltagecapability
- very fast turn-off characteristics
• MOS Gate turn-on
TC = 90°C
TC = 25°C, 1 ms
- drive simplicity
• Reverse conducting capability
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 27 W VCE = 0.8•VCES ICM = 24
Clamped inductive load, L = 100 mH
A
PC
TC = 25°C
200
W
Applications
TJ
-55 ... +150
150
°C
°C
°C
°C
• Flyback converters
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
TJM
Tstg
TL
-55 ... +150
300
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Md
1.15/10 Nm/lb.in.
• CRTdeflection
• Lampballasts
Weight
6
g
Symbol
BVCES
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Advantages
min. typ. max.
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Space savings
IC = 1 mA, VGE = 0 V
IC = 1.5 mA, VCE = VGE
20N140
20N160
1400
1600
V
V
• High power density
VGE(th)
ICES
4
8
V
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
300 mA
mA
1
IGES
VCE = 0 V, VGE = ±20 V
± 500 nA
VCE(sat)
IC = IC90, VGE = 15 V
4.7
5.4
6.5
V
V
TJ = 125°C
© 2000 IXYS All rights reserved
1 - 4
IXBH 20N140
IXBH 20N160
Symbol
Conditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
Cies
Coes
Cres
2100
140
20
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
IC = 13 A, VCE = 600 V, VGE = 15 V
60
nC
td(on)
tri
td(off)
tfi
200
60
ns
ns
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 960 V, RG = 27 W
180
40
Dim. Millimeter
Inches
RthJC
RthCK
0.6 K/W
K/W
Min. Max. Min. Max.
0.25
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
Reverse Conduction
Symbol
Characteristic Values
(TJ = 25°C, unless otherwise specified)
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Conditions
min. typ. max.
10.8 11.0 0.426 0.433
VF
IF = IC90, VGE = 0 V
3.6
5
V
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
2 - 4
IXBH 20N140
IXBH 20N160
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VGE = 17V
15V
VGE = 17V
TJ = 25°C
TJ = 125°C
15V
13V
13V
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
Fig. 2 Typ. Output Characteristics
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VCE = 20V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
0
1
2
3
4
5
6
7
8
4
5
6
7
8
9
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse
Conduction
16
14
12
10
8
30
20
10
0
VCE = 600V
IC = 13A
TJ = 125°C
VCEK < VCES
6
IXBH 20N140
IXBH 20N160
4
2
0
0
10
20
30
40
50
60
70
0
400
800
1200
1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Biased Safe Operating Area
RBSOA
© 2000 IXYS All rights reserved
3 - 4
IXBH 20N140
IXBH 20N160
50
45
40
35
30
25
20
300
250
200
150
100
50
VCE = 960V
GE = 15V
VCE = 960V
GE = 15V
IC 13A
V
V
=
RG = 27
TJ = 125°C
TJ = 125°C
0
0
5
10
15
20
25
30
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7 Typ. Fall Time
Fig. 8 Typ. Turn Off Delay Time
1
0.1
0.01
Single Pulse
0.001
0.0001
IXBH20
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 9 Typ. Transient Thermal Impedance
© 2000 IXYS All rights reserved
4 - 4
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