IXFX44N80P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFX44N80P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFK 44N80P
IXFX 44N80P
VDSS = 800
ID25 = 44
V
A
RDS(on) ≤ 190 mΩ
trr
≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
TO-264 (IXFK)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
G
D
S
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
44
100
A
A
(TAB)
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
22
80
3.4
A
mJ
J
PLUS247 (IXFX)
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 10 Ω
,
10
V/ns
TC = 25°C
1040
W
(TAB)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Md
FC
Mounting torque
Mounting force
(IXFK)
(IXFX)
1.13.10 Nm/lb.in.
Features
z Fast intrinsic diode
20..120 /4.5..25
N/lb
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Weight
(IXFK)
(IXFX)
10
5
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Advantages
z
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 800 μA
VDS = VGS, ID = 8 mA
VGS = ± 30 VDC, VDS = 0
800
V
V
Easy to mount
Space savings
z
3.0
5.0
z
High power density
± ±200
50
nA
IDSS
VDS = VDSS
VGS = 0 V
μA
TJ = 125°C
1.5 mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Note 1
190 mΩ
DS99478E(01/06)
© 2006 IXYS All rights reserved
IXFK 44N80P
IXFX 44N80P
Symbol
gfs
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
27
43
S
Ciss
Coss
Crss
12
910
30
nF
pF
pF
td(on)
tr
td(off)
tf
28
22
75
27
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 1 Ω (External)
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
Qg(on)
Qgs
198
67
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
65
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCS
0.12°C/W
°C/W
.215 BSC
0.15
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
Source-Drain Diode
Characteristic Values
P
3.17
3.66
.125
.144
TJ = 25°C unless otherwise specified)
Q
Q1
R
R1
6.07
8.38
3.81
1.78
6.27
8.69
4.32
2.29
.239
.330
.150
.070
.247
.342
.170
.090
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
44
A
A
V
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
ISM
Repetitive
100
1.5
PLUS 247TM (IXFX) Outline
VSD
IF = IS, VGS = 0 V, Note 1
trr
IF = 22 A, -di/dt = 100 A/μs
250 ns
QRM
IRM
VR = 100 V, VGS = 0 V
0.8
8.0
μC
A
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ±≤ 2 %
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6771478 B2
IXFK 44N80P
IXFX 44N80P
Fig. 2. Extended Output Characteristics
Fig. 1. Output Characteristics
@ 25 C
°
@ 25 C
°
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
V
= 10V
7V
V
GS
= 10V
7V
GS
6V
6V
5V
5V
0
0
3
6
9
12 15 18 21 24 27 30
0
0
0
1
2
3
4
5
6
7
8
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
Fig. 4. RDS(on Normalized to 0.5 ID25
Value vs. Junction Temperature
)
@ 125 C
°
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
45
40
35
30
25
20
15
10
5
V
= 10V
7V
GS
V
= 10V
GS
6V
I
= 44A
D
I
= 22A
D
5V
0
-50
-25
0
25
50
75
100 125 150
2
4
6
8
10
12
14
16
VD S - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to 0.5 ID25
Value vs. Drain Current
2.4
2.2
2
50
45
40
35
30
25
20
15
10
5
V
= 10V
GS
T = 125 C
°
J
1.8
1.6
1.4
1.2
1
T = 25 C
°
J
0.8
0
10 20 30 40 50 60 70 80 90 100
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFK 44N80P
IXFX 44N80P
Fig. 8. Transconductance
Fig. 7. Input Admittance
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
T = - 40 C
°
25 C
J
°
125 C
°
T = 125 C
°
J
25 C
°
- 40 C
°
0
10
20
30
40
50
60
70
80
3.5
4
4.5
5
5.5
6
6.5
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
140
120
100
80
V
= 400V
DS
I
I
= 22A
D
G
= 10mA
60
40
T = 125 C
°
J
20
T = 25 C
°
J
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
0
25
50
75
100 125 150 175 200
VS D - Volts
Q G - NanoCoulombs
Fig. 13. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
100000
10000
1000
100
1.00
0.10
0.01
0.00
f = 1MHz
C
C
iss
oss
C
rss
10
0
5
10
15
20
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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