IXGH60N60 [IXYS]
Ultra-Low VCE(sat) IGBT; 超低VCE （ SAT ） IGBT
| 型号： | IXGH60N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Ultra-Low VCE(sat) IGBT |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES = 600 V
IC25 = 75 A
VCE(sat) = 1.7 V
IXGH 60N60
IXGK 60N60
IXGT 60N60
Ultra-Low VCE(sat) IGBT
Symbol
TestConditions
MaximumRatings
TO-247 AD (IX
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MW
G
G
C
VGES
VGEM
Continuous
Transient
±20
±30
V
V
E
TO-268
(IXGT)
IC25
IC90
ICM
TC = 25°C, limited by leads
TC = 90°C
75
60
A
A
A
E
TC = 25°C, 1 ms
200
(TAB)
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 30 mH
ICM = 100
@ 0.8 VCES
A
TO-264 (IXGK
PC
TC = 25°C
300
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
G
D
S
D (TAB)
-55 ... +150
Md
Mountingtorque(M3)
1.13/10 Nm/lb.in.
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
Weight
TO-247
TO-264
TO-268
6
10
4
g
g
g
• Internationalstandardpackage
JEDEC TO-247 AD, TO-264, TO-268
• New generation HDMOSTM process
• Low VCE(sat) for minimum on-state
conduction losses
• Highcurrenthandlingcapability
• MOS Gate turn-on drive simplicity
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
600
2.5
V
V
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 mA
mA
Advantages
1
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
• Low losses, high efficiency
• High power density
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
1.7
VCE(sat)
IC = IC90, VGE = 15 V
V
• High power, surface mount package
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92796L(7/00)
1 - 4
IXGH 60N60 IXGK 60N60
IXGT 60N60
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
IC = IC90; VCE = 10 V,
30
55
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
3700
290
86
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Dim. Millimeter
Inches
Min. Max. Min. Max.
Qg
130
30
nC
nC
nC
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
45
Inductive load, TJ = 25°C
E
F
4.32 5.49 0.170 0.216
td(on)
tri
td(off)
tfi
50
25
ns
ns
5.4
6.2 0.212 0.244
IC = IC90, VGE = 15 V, L = 100 mH,
G
H
1.65 2.13 0.065 0.084
VCE = 0.8 VCES, RG = Roff = 2.7 W
-
4.5
-
0.177
300
360
8
600 ns
570 ns
15 mJ
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
J
K
1.0
1.4 0.040 0.055
10.8 11.0 0.426 0.433
Eoff
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
td(on)
tri
50
25
ns
ns
N
1.5 2.49 0.087 0.102
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
TO-264 AA (IXFK) Outline
Eon
td(off)
tfi
3
mJ
ns
VCE = 0.8 VCES, RG = Roff = 2.7 W
650
550
17
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
Eoff
mJ
RthJC
RthCK
0.42 K/W
(IXGH)
(IXGK)
0.25
0.15
K/W
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
TO-268AA (IXFT) (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
P
Q
Q1
3.17
6.07
8.38
3.66
6.27
8.69
.125
.239
.330
.144
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
13.3
5.45 BSC
18.70 19.10
.543 .551
.624 .632
.524 .535
Min. Recommended Footprint
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 60N60 IXGK 60N60
IXGT 60N60
100
90
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
TJ = 25°C
VGE = 15V
TJ = 25°C
13V
VGE = 15V
11V
13V
11V
9V
7V
9V
7V
0
0
1
2
3
4
5
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 15V
IC = 120A
VGE = 15V
175
150
125
100
75
TJ = 25oC
TJ = 125oC
IC = 60A
IC = 30A
50
25
0
0
1
2
3
4
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
1.3
100
VGE(th)
= 250µA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
BVCES
IC
IC = 250µA
10
1
TJ = 125oC
RG = 4.7
dV/dt < 5V/ns
0.1
0
100
200
300
400
500
600
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VCE - Volts
Fig. 6. Temperature Dependence of
BVCES & VGE(th)
Fig. 5. Turn-off Safe Operating Area
© 2000 IXYS All rights reserved
3 - 4
IXGH 60N60 IXGK 60N60
IXGT 60N60
40
30
20
10
0
1000
750
500
250
0
1000
800
600
400
200
18
TJ = 125°C
TJ = 125°C
Eoff
IC = 60A
RG = 10
16
14
12
10
tfi
tfi
Eoff
0
20
40
60
80
100
120
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of tfi and EOFF on IC.
Fig. 8. Dependence of tfi and EOFF on RG.
15
12
9
10000
1000
100
IC = 60A
VCE = 300V
Cies
6
3
0
10
0
50
100
QG - nanocoulombs
Fig. 9. Gate Charge
150
200
250
0
10
20
30
40
VCE - Volts
Fig. 10. Junction Capacitance Curves
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 4
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