IXGH60N60C3D1 [IXYS]
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications; 600V GenX3 IGBT的新一代600V的IGBT功率转换应用
| 型号： | IXGH60N60C3D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | 600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications |
| 文件： | 总4页 (文件大小：839K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXYS
POWER
ꢀ ꢁ w p r o D u c T B r I ꢁ f
Efficiency through T e chnology
600V GenX3™ IGBTs
ꢀꢁXT GꢁꢀꢁraTIoꢀ 600V IGBTꢂ for powꢁr coꢀVꢁrꢂIoꢀ applIcaTIoꢀꢂ
jaꢀuary 2009
oVꢁrVIꢁw
IXYS extends its GenX3TM insulated gate bipolar transistor (IGBT) product line to
600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM
IGBT process and uꢀlize IXYS’ advanced Punch-Though (PT) technology, tailored
to provide higher surge current capabiliꢀes, lower saturaꢀon voltages, and lower
switching losses.
To accommodate opꢀmum part selecꢀon, designers have a choice in selecꢀng
between three sub-classes denoted A3, B3, and C3. These classificaꢀons allow
designers to “dial in” the best compromise between staꢀc (conducꢀon) and
dynamic (switching) losses, improving over-all system efficiency in a variety of
power conversion applicaꢀons by balancing criꢀcal requirements such as switching
frequency, efficiency, and cost structure. The A3-Class are opꢀmized for low
saturaꢀon voltage V(sat) and are well suited for applicaꢀons requiring switching
frequencies up to 5kHz. Similarly, the B3-Class offers low saturaꢀon voltages, but
is opꢀmized to accommodate applicaꢀons that require “medium speed” switching
operaꢀon from 5kHz to 40kHz. The C3-Class is opꢀmized for “high speed” switching
operaꢀon from 40kHz to 100kHz and resonant switching operaꢀon of up to
400kHz.
IXYS 600V GenX3TM IGBTs are offered in various standard packages, including the
full gamut of surface mount and discrete packages with current raꢀngs from 36
amperes to 210 amperes. Furthermore, some devices will be offered in PLUS and
ISOPLUS isolated packages, featuring UL recognized 2500V isolaꢀon and superior
thermal performance. Co-Packed variants of these new devices are available with
IXYS’ HiPerFREDTM ultra-fast recovery diodes providing excepꢀonal fast recovery
and soꢁ switching characterisꢀcs.
These IGBTs are designed to achieve the opꢀmal soluꢀon in applicaꢀons such as
power inverters, UPS, motor drives, SMPS, PFC, baꢂery chargers, welding machines,
lamp ballasts, inrush current protecꢀon circuits and DC choppers.
ꢃꢃꢃ.ixꢄs.ꢅꢆm
IꢂopluꢂTM Packages with Internal Alumina DCB Isolaꢁon*
DCB
Ceramic
Bond wires
Copper
Copper
Solder
Leads
Chip
Mould
Provides 2500V, UL recognized isolaꢀon with superior thermal performance (E153432).
Improves termperature and power cycling capability.
Cost effecꢀve clip mounꢀng.
* IXYS Patented Packages, Patent No. 6,404,065
* For informaꢀon regarding IXYS ISoPLUS packages, visit hꢂp://www.ixys.com/IXAN0022.pdf
600V GenX3TM (a3) IGBTs ꢂꢉmmꢇꢈꢄ Tꢇbꢊe
a3-cꢊꢇss n uꢊtꢈꢇ ꢊꢆꢃ V(sꢇt) IGBTs n Up to 5khz
The switching and conducꢀon losses for the A3-Class are opꢀmized for sub-5kHz switching frequency applicaꢀons.
Performance improvements for this classificaꢀon include up to a 16% reducꢀon in saturaꢀon voltage Vce(sat) compared to
prior generaꢀon product.
Vꢅes
(V)
600
Iꢅ @ Tꢅ = 110ꢆc
Vꢅe (sꢇt) Tj = 25ꢆc
ꢀi typ
(ns)
325
Eoff typ
(mj)
rthjc
(ꢆc/w)
0.56
pꢇꢈt ꢀꢉmbeꢈ
IXGP36N60A3
IXGH36N60A3
(a)
36
36
(V)
1.4
1.4
pꢇꢅkꢇge
TO-220
TO-247
3
325
3
600
0.56
1.4
325
3
IXGH36N60A3D4
600
36
0.56
TO-247
1.4
325
222
224
224
224
224
250
250
222
222
250
250
250
260
260
260
260
740
270
740
740
3
IXGA36N60A3
IXGR64N60A3
IXGP48N60A3
IXGH48N60A3
IXGH48N60A3D1
IXGA48N60A3
IXGR72N60A3
IXGR72N60A3U1
IXGH64N60A3
IXGT64N60A3
IXGH72N60A3
IXGH72N60A3
IXGT72N60A3
IXGX120N60A3
IXGN120N60A3
IXGN120N60A3D1
IXGK120N60A3
IXGN320N60A3
IXGN400N60A3
IXGX320N60A3
IXGK320N60A3
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
36
47
48
48
48
0.56
0.62
0.42
0.42
0.42
0.42
0.62
0.62
0.27
0.27
0.23
0.23
0.23
0.16
0.21
0.21
0.16
0.17
0.15
0.125
0.125
TO-263
ISOPLUS247
TO-220
TO-247
TO-247
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.35
1.25
1.25
1.25
1.25
3.28
2.9
2.9
2.9
2.9
3.5
3.5
3.28
3.28
3.5
3.5
3.5
6.6
6.6
6.6
6.6
na
48
TO-263
52
52
64
64
72
72
72
120
120
120
120
170
190
210
210
ISOPLUS247
ISOPLUS247
TO-247
TO-268
TO-247
TO-247
TO-268
PLUS247
SOT-227B
SOT-227B
TO-264
SOT-227B
SOT-227
PLUS247
TO-264
na
na
na
600V GenX3TM (B3) IGBTs ꢂꢉmmꢇꢈꢄ Tꢇbꢊe
B3-cꢊꢇss n Medium Speed IGBTs n Up to 40kHz
The switching and conducꢀon losses for the B3-Class are opꢀmized for up to 40kHz. Performance improvements were incorporated to
yield up to 22% lower turn-off energy per pulse (Eoff) and 10% lower thermal resistance to improve power handling.
Vꢅes
(V)
600
600
600
Iꢅ @ Tꢅ = 110ꢆc
Vꢅe (sꢇt) Tj = 25ꢆc
ꢀi typ
(ns)
116
Eoff typ
(mj)
0.66
rthjc
(ꢆc/w)
0.83
0.83
0.5
pꢇꢈt ꢀꢉmbeꢈ
IXGR48N60B3
IXGR48N60B3D1
IXGH36N60B3D1
IXGH36N60B3D4
IXGP48N60B3
IXGH48N60B3D1
IXGH48N60B3
IXGA48N60B3
IXGH56N60B3D1
IXGX64N60B3D1
IXGH64N60B3
IXGK64N60B3D1
IXGT64N60B3
IXGX72N60B3H1
IXGH72N60B3
IXGK72N60B3H1
IXGT72N60B3
(a)
27
27
36
(V)
2.1
2.1
1.8
pꢇꢅkꢇge
ISOPLUS247
ISOPLUS247
TO-247
116
0.66
100
0.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.5
1.8
1.8
1.8
1.5
1.5
100
116
116
116
116
95
0.8
0.66
0.66
0.66
0.66
1.05
1
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
36
48
48
48
48
0.5
0.42
0.42
0.42
0.42
0.375
0.27
0.27
0.27
0.27
0.23
0.23
0.23
0.23
0.31
0.19
0.16
0.16
0.1
TO-247
TO-220
TO-247
TO-247
TO-263
56
64
64
64
64
72
72
72
72
90
90
120
120
200
200
TO-247
PLUS247
TO-247
TO-264
TO-268
PLUS247
TO-247
TO-264
TO-268
ISOPLUS264
TO-247
88
88
1
88
1
88
1
92
1
92
1
92
1
92
1
183
148
145
145
183
183
2.9
1.37
3.5
3.5
2.9
2.9
IXGL200N60B3
IXGH90N60B3
IXGX120N60B3
IXGK120N60B3
IXGB200N60B3
IXGN200N60B3
PLUS247
TO-264 AA
PLUS264
SOT-227B
0.15
600V GenX3TM (c3) IGBTs ꢂꢉmmꢇꢈꢄ Tꢇbꢊe
c3-cꢊꢇss n High Speed IGBTs n Up to 100kHz
The switching and conducꢀon losses for the C3-Class are opꢀmized for switching frequencies up to 100khz. The C3-Class performance
improvements include up to a 12% decrease in thermal resistance for improved power handling and also include up to 22% lower turn-off
energy per pulse (Eoff) for significantly lower switching losses versus prior generaꢀon of high speed IGBTs.
Vꢅes
(V)
Iꢅ @ Tꢅ = 110ꢆc
Vꢅe (sꢇt) Tj = 25ꢆc
ꢀi typ
(ns)
38
Eoff typ
(mj)
0.23
0.09
0.09
0.09
0.48
0.23
0.23
0.23
0.23
0.42
0.42
0.48
0.48
rthjc
(ꢆc/w)
1
pꢇꢈt ꢀꢉmbeꢈ
IXGR48N60C3D1
IXGP30N60C3
IXGH30N60C3D1
IXGA30N60C3
IXGR72N60C3D1
IXGP48N60C3
IXGH48N60C3
IXGH48N60C3D1
IXGA48N60C3
(a)
26
30
30
30
35
48
48
48
48
60
60
72
72
(V)
2.7
3
pꢇꢅkꢇge
ISOPLUS 247
TO-220
TO-247
TO-263
ISOPLUS 247
TO-220
TO-247
TO-247
TO-263
600
600
600
600
600
600
600
600
600
600
600
600
600
47
0.56
0.56
0.56
0.62
0.42
0.42
0.42
0.42
0.33
0.33
0.23
0.23
3
47
3
47
2.7
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
55
38
38
38
38
55
IXGH60N60C3
IXGH60N60C3D1
IXGX72N60C3H1
IXGH72N60C3
TO-247
TO-247
PLUS247
TO-247
55
55
55
applIcaTIoꢀꢂ
fꢁaTurꢁꢂ
BꢁꢀꢁfITꢂ
Power inverters
Opꢁmized for low switching &
High power density
Low gate drive requirement
Uninterrupꢁble power supplies
Motor drives
Switch mode power supplies
Power factor correcꢁon circuits
Welding machines
conducꢁon losses
Square RBSOA
High current handling capability
Internaꢁonal standard packages
Lamp ballasts
Mulꢁ-Process High Frequency Inverter Welder
L1
Power Stage
Full Bridge Inverter
D5
The figure on the leꢁ illustrates a general circuit
topology of an inverter welding power source. This
circuit topology is composed of four stages: A) Recꢀfier
stage, B) PFC & Boost stage, C) Power stage, and D)
Output stage. Input power from a power grid enters
the recꢀficaꢀon stage to be recꢀfied to a DC value
and is processed via a power factor correcꢀon boost
converter. From there it enters the power stage which
employs a full bridge inverter to convert the voltage
back to AC at high frequencies typically from 50Khz
to 100Khz. The AC signal is then stepped down via T1
transformer which then gets recꢀfied and smoothed
out at the output stage.
Rectifier
Power
Factor
Correction
Boost
Q2
Q4
D1
D2
230VAC
Converter
Q1
C1
D3
D4
PFC
Q3
Q5
Controller
Gate Drive
Controller
Step Down
Transformer
Output Stage
D6
L2
Vout+
R1
C4
C5
C2
R2
C3
D7
Work Clamp
AC Motor Drive (Resonant DC Link Inverter)
The figure on the right illustrates an AC motor
drive that uꢀlizes a resonant DC link inverter. A
C1
Q7
resonant link (L1, C2) is affixed to the DC bus line
of a pulse width modulaꢀon inverter. The resonant
link is then ‘excited’ and maintains resonance
through the control of the IGBTs in a way that
the resonaꢀng dc voltage bus frequently reaches
zero volts. The IGBTs are turned on and off at
zero voltage and are synchronized to match the
zero voltage crossings to achieve the desired low
switching loss. An acꢀve clamp circuit (Q7, C1) is
added to clamp down unwanted overshoot when
the DC inverter current decreases abruptly caused
by the switching behavior of the IGBTs.
L1
Q1
Q5
Q3
Q4
Motor
3-Phase AC
C2
Vs
Q2
Q6
Gate Drive Controller
ꢃꢃꢃ.ixꢄs.ꢅꢆm
January 2009
PB60IGBTA3B3C3 1.4
相关型号：
IXGH80N40B2
Insulated Gate Bipolar Transistor, 80A I(C), 400V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
IXYS
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