IXGH6N170 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXGH6N170 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总4页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXGH 6N170
IXGT 6N170
VCES
IC25
= 1700 V
12 A
High Voltage
IGBT
=
VCE(sat) = 4.0 V
tfi(typ)
= 290 ns
Symbol
TestConditions
Maximum Ratings
TO-268(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
1700
1700
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
G
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
E
C (TAB)
IC25
IC90
ICM
TC = 25°C
12
6
A
A
A
TO-247AD(IXGH)
TC = 90°C
TC = 25°C, 1 ms
24
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
ICM = 12
@ 0.8 VCES
A
TAB)
Clamped inductive load
G
C
E
PC
TC = 25°C
75
W
G = Gate,
E=Emitter,
C = Collector,
TAB = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
z International standard packages
JEDEC TO-268 and JEDEC
TO-247 AD
z High current handling capability
z MOS Gate turn-on
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°C
°C
260
Md
Mounting torque (M3) TO-247
1.13/10Nm/lb.in.
- drive simplicity
Weight
TO-247 AD
TO-268
6
4
g
g
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
Symbol
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
BVCES
VGE(th)
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
1700
3.0
V
V
5.0
ICES
VCE = 0.8 • VCES
VGE = 0 V
10
100
μA
μA
TJ = 125°C
TJ = 125°C
Advantages
IGES
VCE = 0 V, VGE = ± 20 V
±100
nA
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
VCE(sat)
IC = IC90, VGE = 15 V
3.0
4.0
4.0
V
V
© 2006 IXYS All rights reserved
DS98989B(09/06)
IXGH 6N170
IXGT 6N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs
IC = IC90; VCE = 10 V,
3
4 .5
S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
∅ P
IC(ON)
VGE = 15V, VCE = 10V
28
A
Cies
Coes
Cres
330
23
6
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
e
Qg
20
3.6
8
nC
nC
nC
Dim.
Millimeter
Min.
Inches
Min. Max.
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
40
36
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 33 Ω
250
290
1.5
500 ns
500 ns
2.5 mJ
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
20.80 21.46
15.75 16.26
,
Eoff
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
45
40
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eon
td(off)
tfi
0.5
VCE = 0.8 VCES, RG = Roff = 33 Ω
300
300
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
TO-268 Outline
Eoff
2.0
mJ
RthJC
1.65 K/W
RthCK
(TO-247)
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Min Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478B2
7,005,734B2
7,063,975B2
7,071,537
7,063,975B2
7,071,537
IXGH 6N170
IXGT 6N170
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Exteded Output Characteristics
@ 25ºC
12
11
10
9
30
27
24
21
18
15
12
9
V
= 15V
V
= 15V
GE
GE
13V
11V
13V
8
11V
9V
7
9V
7V
6
5
4
3
6
2
7V
3
1
0
0
0
1
2
3
4
5
6
0
-50
0
2
4
6
8
10
12
14
16
125
9
18
150
10
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GE
13V
11V
V
= 15V
GE
I
= 12A
C
9V
7V
6
I
= 6A
C
4
2
I
= 3A
C
0
-25
0
25
50
75
100
0
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade
VCE - Volts
Fig. 6. Transconductance
Fig. 5. Input Admittance
5
4.5
4
10
9
8
7
6
5
4
3
2
1
0
T
= -40ºC
J
25ºC
3.5
3
125ºC
2.5
2
1.5
1
TJ = 125ºC
25ºC
- 40ºC
0.5
0
1
2
3
4
5
6
7
8
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
VGE - Volts
IC - Amperes
© 2006 IXYS All rights reserved
IXGH 6N170
IXGT 6N170
Fig. 7. Gate Charge
Fig. 8. Capacitance
16
14
12
10
8
1,000
100
10
f = 1 MHz
V
= 850V
CE
I
I
= 6A
C
G
= 10 mA
C
ies
C
C
oes
res
6
4
2
0
1
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
30
35
40
VCE - Volts
QG - NanoCoulombs
Fig. 10. Maximum Transient Thermal
Resistance
Fig. 9. Reverse-Bias Safe Operating Area
13
12
11
10
9
10.0
8
7
1.0
6
5
4
3
T
J
= 125ºC
2
R
G
= 33
Ω
dV / dT < 10V / ns
1
0
0.1
100
300
500
700
900
1100 1300 1500 1700
0.0001
0.001
0.01
0.1
1
10
VCE - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
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