IXGH64N60A3 [IXYS]
GenX3 600V IGBT; GenX3 600V IGBT
| 型号： | IXGH64N60A3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT |
| 文件： | 总6页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM 600V IGBT
IXGH64N60A3
IXGT64N60A3
VCES = 600V
IC110 = 64A
VCE(sat) ≤ 1.35V
Ultra-lowVsat PT IGBTs for up to
5 kHz switching
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXGH)
VCES
VCGR
TC = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
G
C (TAB)
C
IC110
ICM
TC = 110°C
64
A
A
E
TC = 25°C, 1ms
400
SSOA
VGE = 15V, TVJ = 125°C, RG = 3Ω
Clamped inductive load @ ≤ 600V
ICM = 100
A
TO-268 (IXGT)
(RBSOA)
PC
TC = 25°C
460
W
G
E
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
C (TAB)
-55 ... +150
G = Gate
E = Emitter
C
= Collector
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
TAB = Collector
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
Features
Weight
TO-247
TO-268
6
5
g
g
z Optimized for low conduction losses
z Square RBSOA
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
600
V
V
z Power Inverters
z UPS
3.0
5.0
z Motor Drives
VCE = VCES
VGE = 0V
50 μA
z SMPS
z PFC Circuits
TJ = 125°C
500 μA
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = 50A, VGE = 15V, Note 1
1.20
1.35
V
© 2008 IXYS CORPORATION, All rights reserved
DS100003(06/08)
IXGH64N60A3
IXGT64N60A3
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
gfS
IC = 50A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
40
70
S
Cies
Coes
Cres
4850
270
66
pF
pF
pF
∅ P
1
2
3
Qg
167
28
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
60
e
td(on)
tri
26
40
ns
ns
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Inductive load, TJ = 25°C
Dim.
Millimeter
Inches
Min. Max.
Eon
td(off)
tfi
1.42
268
222
3.28
mJ
ns
Min. Max.
IC = 50A, VGE = 15V
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VCE = 480V, RG = 3Ω
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Eoff
mJ
td(on)
tri
25
40
ns
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
Eon
td(off)
tfi
2.76
415
362
6.00
mJ
ns
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
VCE = 480V, RG = 3Ω
ns
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
Eoff
mJ
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
RthJC
RthCS
0.27 °C/W
°C/W
0.25
TO-268 (IXGT) Outline
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
IXGH64N60A3
IXGT64N60A3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
100
90
80
70
60
50
40
30
20
10
0
280
240
200
160
120
80
VGE = 15V
13V
11V
VGE = 15V
13V
11V
9V
7V
9V
7V
40
0
0.0
0.0
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.8
15
0
1
2
3
4
5
6
7
8
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
100
90
80
70
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGE = 15V
13V
11V
VGE = 15V
I C = 100A
9V
7V
I C = 50A
5V
I C = 25A
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
180
160
140
120
100
80
3.2
2.8
2.4
2.0
1.6
1.2
0.8
TJ = 25ºC
I C = 100A
50A
25A
TJ = 125ºC
25ºC
- 40ºC
60
40
20
0
6
7
8
9
10
11
12
13
14
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGH64N60A3
IXGT64N60A3
Fig. 8. Gate Charge
Fig. 7. Transconductance
110
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 50A
I G = 10 mA
25ºC
125ºC
6
4
2
0
0
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
120
140
160
180
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
10,000
1,000
100
110
100
90
80
70
60
50
40
30
20
10
0
C
ies
C
oes
TJ = 125ºC
C
res
RG = 3Ω
dV / dt < 10V / ns
= 1 MHz
5
f
10
100 150 200 250 300 350 400 450 500 550 600 650
0
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_64N60A3(75) 7-02-08-B
IXGH64N60A3
IXGT64N60A3
Fig. 13. Inductive Switching
Energy Loss vs. Junction Temperature
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
18
16
14
12
10
8
9
8
7
6
5
4
3
2
1
0
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
E
E
on - - - -
off
I C = 100A
RG = 3Ω VGE = 15V
,
VCE = 480V
I C = 100A
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
VCE = 480V
6
8
7
I C = 50A
4
I C = 50A
6
2
5
0
4
25
35
45
55
65
75
85
95
105 115 125
0
5
10
15
20
25
30
35
RG - Ohms
TJ - Degrees Centigrade
Fig. 14. Inductive Switching
Energy Loss vs. Collector Current
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
16
14
12
10
8
8
410
400
390
380
370
360
350
340
1000
900
800
700
600
500
400
300
I C = 100A
E
E
on - - - -
off
7
6
5
4
3
2
1
0
RG = 3Ω VGE = 15V
,
VCE = 480V
I C = 50A
TJ = 125ºC
6
4
tf
t
d(off) - - - -
TJ = 125ºC, VGE = 15V
TJ = 25ºC
2
VCE = 480V
I C = 100A
10
0
20
30
40
50
60
70
80
90
100
0
5
15
20
25
30
35
RG - Ohms
IC - Amperes
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
420
400
380
360
340
320
300
280
260
240
220
200
475
450
425
400
375
350
325
300
275
250
225
200
420
400
380
360
340
320
300
280
260
240
220
200
180
480
460
440
420
400
380
360
340
320
300
280
260
240
t f
RG = 3Ω , VGE = 15V
td(off) - - - -
VCE = 480V
TJ = 125ºC
tf
RG = 3Ω , VGE = 15V
t
d(off) - - - -
I C = 100A, 50A
VCE = 480V
TJ = 25ºC
25
35
45
55
65
75
85
95 105 115 125
20
30
40
50
60
70
80
90
100
TJ - Degrees Centigrade
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXGH64N60A3
IXGT64N60A3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Junction Temperature
120
110
100
90
40
38
36
34
32
30
28
26
24
22
20
160
140
120
100
80
140
120
100
80
tr
t
d(on) - - - -
tr
t
d(on) - - - -
RG = 3 , VGE = 15V
Ω
TJ = 125ºC, VGE = 15V
I C = 100A
VCE = 480V
VCE = 480V
I C = 100A
80
70
60
60
50
60
40
I C = 50A
40
40
20
I C = 50A
30
20
0
20
5
10
15
20
25
30
35
40
45
50
25
35
45
55
65
75
85
95 105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 20. Inductive Turn-on
Switching Times vs. Collector Current
120
110
100
90
80
70
60
50
40
30
20
10
0
34
33
32
31
30
29
28
27
26
25
24
23
22
tr
td(on)
- - - -
RG = 3Ω , VGE = 15V
VCE = 480V
TJ = 25ºC, 125ºC
20
30
40
50
60
70
80
90
100
IC - Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_64N60A3(75) 7-02-08-B
相关型号：
IXGH80N40B2
Insulated Gate Bipolar Transistor, 80A I(C), 400V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
IXYS
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