IXGH64N60B3 [IXYS]
GenX3 600V IGBT; GenX3 600V IGBT
| 型号： | IXGH64N60B3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT |
| 文件： | 总6页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM 600V IGBT
IXGH64N60B3
IXGT64N60B3
VCES = 600V
IC110 = 64A
VCE(sat) ≤ 1.8V
tfi(typ) = 88ns
Medium speed low Vsat PT
IGBTs for 5 - 40kHz switching
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXGH)
VCES
VCGR
TC = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
G
C (TAB)
C
E
IC110
ICM
TC = 110°C
64
A
A
TC = 25°C, 1ms
400
TO-268 (IXGT)
G
SSOA
VGE = 15V, TVJ = 125°C, RG = 3Ω
ICM = 200
A
(RBSOA) Clamped inductive load @ ≤ 600V
PC
TC = 25°C
460
W
E
C
TJ
-55 ... +150
150
°C
°C
°C
C (TAB)
TJM
Tstg
-55 ... +150
G = Gate
= Collector
E = Emitter TAB = Collector
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
Features
Md
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
z Optimized for low conduction and
switching losses
Weight
TO-247
TO-268
6
5
g
g
z Square RBSOA
z International standard packages
Advantages
z High power density
z Low gate drive requirement
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
z Power Inverters
z UPS
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
600
V
V
3.0
5.0
z Motor Drives
z SMPS
ICES
VCE = VCES
VGE = 0V
50 μA
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
TJ = 125°C
500 μA
IGES
VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = 50A, VGE = 15V, Note 1
1.59 1.80
V
© 2008 IXYS CORPORATION, All rights reserved
DS99971(04/08)
IXGH64N60B3
IXGT64N60B3
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
gfS
IC = 50A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
38
64
S
Cies
Coes
Cres
4750
260
65
pF
pF
pF
∅ P
1
2
3
Qg
168
28
nC
nC
nC
Qge
Qgc
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
e
61
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
td(on)
tri
25
41
ns
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Eon
td(off)
tfi
1.5
138
88
mJ
ns
VCE = 480V, RG = 3Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
150
1.9
ns
Eoff
1.0
mJ
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
td(on)
tri
24
40
ns
ns
e
L
L1
5.20
5.72 0.205 0.225
Inductive load, TJ = 125°C
IC = 50A, VGE = 15V
19.81 20.32
4.50
.780 .800
.177
Eon
td(off)
tfi
2.70
195
131
1.95
mJ
ns
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
VCE = 480V, RG = 3Ω
R
S
4.32
5.49
.170 .216
242 BSC
ns
6.15 BSC
Eoff
mJ
TO-268 (IXGT) Outline
RthJC
RthCS
0.27 °C/W
°C/W
0.15
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
IXGH64N60B3
IXGT64N60B3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
100
90
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
VGE = 15V
11V
VGE = 15V
13V
11V
9V
9V
7V
7V
5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VCE - Volts
0
1
2
3
4
5
6
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
100
90
80
70
60
50
40
30
20
10
0
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
VGE = 15V
11V
VGE = 15V
I C = 100A
9V
7V
I C = 50A
I C = 25A
5V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VCE - Volts
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
TJ = 25ºC
TJ = 125ºC
25ºC
- 40ºC
I C = 100A
50A
25A
60
40
20
0
5
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGH64N60B3
IXGT64N60B3
Fig. 7. Transconductance
Fig. 8. Gate Charge
110
100
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 50A
I
G = 10 mA
25ºC
125ºC
6
4
2
0
0
20
40
60
80
100 120 140 160 180 200
0
20
40
60
80
100
120
140
160
180
IC - Amperes
QG - NanoCoulombs
Fig. 10. Capacitance
Fig. 9. Reverse-Bias Safe Operating Area
10,000
1,000
100
220
200
180
160
140
120
100
80
C
ies
C
oes
60
TJ = 125ºC
C
40
res
RG = 3
Ω
dV / dt < 10V / ns
= 1 MHz
5
f
20
0
10
100
200
300
400
500
600
0
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_64N60B3(75) 4-09-08-A
IXGH64N60B3
IXGT64N60B3
Fig. 13. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6
5
7
6
5
4
3
2
1
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
E
on - - - -
I C = 84A
off
RG = 3
I C = 84A
VGE = 15V
Ω
,
VCE = 480V
4
E
Eon - - - -
off
TJ = 125ºC , VGE = 15V
CE = 480V
3
V
I C = 42A
I C = 42A
2
1
0
I C = 21A
I C = 21A
-1
25
35
45
55
65
75
85
95
105 115 125
0
5
10
15
20
25
30
35
RG - Ohms
TJ - Degrees Centigrade
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
5.5
180
900
800
700
600
500
400
300
200
100
E
E
on - - - -
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
off
RG = 3
TJ = 125ºC
170
160
150
140
130
120
110
100
VGE = 15V
,
Ω
tf
t
d(off) - - - -
VCE = 480V
TJ = 125ºC, VGE = 15V
I C = 21A, 42A, 84A
VCE = 480V
I C = 42A
TJ = 25ºC
I C = 21A
30 35
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
0
5
10
15
20
25
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times
vs. Junction Temperature
Fig. 17. Inductive Turn-off Switching Times
vs. Collector Current
180
170
160
150
140
130
120
110
100
90
205
190
175
160
145
130
115
180
170
160
150
140
130
120
110
100
90
210
200
190
180
170
160
150
140
130
120
110
100
tf
t
d(off) - - - -
TJ = 125ºC
RG = 3 , VGE = 15V
Ω
VCE = 480V
t f
t
d(off) - - - -
RG = 3 , VGE = 15V
Ω
VCE = 480V
I C = 42A, 84A
TJ = 25ºC
80
80
70
I C = 21A
45 55
60
70
25
35
65
75
85
95 105 115 125
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXGH64N60B3
IXGT64N60B3
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
Fig. 19. Inductive Turn-on Switching Times
vs. Junction Temperature
130
120
110
100
90
80
75
70
65
60
55
50
45
40
35
30
25
20
90
80
70
60
50
40
30
20
10
0
30
29
28
27
26
25
24
23
22
21
t r
t
d(on) - - - -
I C = 84A
I C = 84A
TJ = 125ºC, VGE = 15V
VCE = 480V
tr
RG = 3
t
d(on) - - - -
VGE = 15V
Ω
VCE = 480V
80
70
I C = 42A
60
I C = 42A
50
40
30
20
I C = 21A
95 105 115 125
I C = 21A
10
10
0
5
15
20
25
30
35
25
35
45
55
65
75
85
RG - Ohms
TJ - Degrees Centigrade
Fig. 20. Inductive Turn-on Switching Times
vs. Collector Current
75
32
31
30
29
28
27
26
25
24
23
22
21
20
tr
RG = 3
td(on
- - - -
)
VGE = 15V
70
65
60
55
50
45
40
35
30
25
20
15
,
Ω
VCE = 480V
25ºC < TJ < 125ºC
20 25 30 35 40 45 50 55 60 65 70 75 80 85
IC - Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_64N60B3(75) 4-09-08-A
相关型号：
IXGH80N40B2
Insulated Gate Bipolar Transistor, 80A I(C), 400V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
IXYS
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