IXYA20N65B3 [IXYS]
Advance Technical Information;
| 型号： | IXYA20N65B3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Advance Technical Information |
| 文件： | 总6页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
XPTTM 650V IGBT
GenX3TM
VCES = 650V
IC110 = 20A
VCE(sat) 2.10V
tfi(typ) = 87ns
IXYA20N65B3
IXYP20N65B3
IXYH20N65B3
Extreme Light Punch Through
IGBT for 5-30kHz Switching
TO-263 (IXYA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-220 (IXYP)
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
TJ = 25°C to 175°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
58
20
108
A
A
A
TO-247 AD (IXYH)
IA
EAS
TC = 25°C
TC = 25°C
10
A
200
mJ
SSOA
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
ICM = 40
A
μs
W
G
C
E
C (Tab)
(RBSOA)
@VCE VCES
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
5
G = Gate
E = Emitter
C
= Collector
Tab = Collector
(SCSOA)
RG = 82, Non Repetitive
PC
TC = 25°C
230
Features
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Advantages
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
650
3.5
Typ.
Max.
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
10 A
150 A
TJ = 150C
TJ = 150C
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 20A, VGE = 15V, Note 1
1.77
2.05
2.10
V
V
© 2015 IXYS CORPORATION, All Rights Reserved
DS100644(02/15)
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-220 Outline
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
8.5
14
S
Cies
Coes
Cres
826
66
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
19
Qg(on)
Qge
Qgc
29
6
nC
nC
nC
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
14
td(on)
tri
Eon
td(off)
tfi
12
25
ns
ns
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
0.50
103
87
mJ
Pins: 1 - Gate
3 - Emitter
2 - Collector
ns
ns
VCE = 400V, RG = 20
Note 2
Eof
0.45
0.70 mJ
f
td(on)
tri
13
26
ns
ns
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
Eon
td(off)
tfi
0.93
124
147
0.76
mJ
ns
VCE = 400V, RG = 20
ns
Note 2
Eoff
mJ
RthJC
RthCS
RthCS
0.65 °C/W
°C/W
TO-220
TO-247
0.50
0.21
TO-247 Outline
°C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-263 Outline
1 - Gate
2,4 - Collector
3 - Emitter
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
40
35
30
25
20
15
10
5
V
= 15V
GE
120
100
80
60
40
20
0
13V
12V
11V
V
= 15V
GE
10V
9V
14V
13V
12V
11V
10V
9V
8V
7V
8V
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
40
35
30
25
20
15
10
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GE
V
= 15V
GE
13V
12V
11V
10V
9V
I = 40A
C
I
= 20A
C
8V
7V
6V
I
= 10A
C
0
-50
-25
0
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
3.5
4
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
6
5
4
3
2
1
45
40
35
30
25
20
15
10
5
T
J
= 25ºC
I
= 40A
C
T
J
= 150ºC
25ºC
- 40ºC
20A
10A
10
0
4
5
6
7
8
9
10
7
8
9
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 7. Transconductance
Fig. 8. Gate Charge
24
20
16
12
8
16
14
12
10
8
T
J
= - 40ºC
V
= 10V
CE
VCE = 325V
I
I
C = 20A
G = 10mA
25ºC
150ºC
6
4
4
2
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
45
50
55
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
= 1 MHz
f
40
30
20
10
0
C
C
ies
oes
T
J
= 150ºC
R
G
= 20
Ω
dv / dt < 10V / ns
C
res
10
100
200
300
400
500
600
700
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
1
1000
100
10
V
Limit
CE(sat)
D = 0.5
D = 0.2
25µs
0.1
D = 0.1
100µs
D = tp / T
D = 0.05
t
p
D = 0.02
D = 0.01
1
T
= 175ºC
= 25ºC
J
T
1ms
Single Pulse
T
C
Single Pulse
10ms
1000
DC
0.01
0.1
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1
10
100
VDS - Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 14. Inductive Switching Energy Loss vs.
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Collector Current
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.2
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
E
E
on - - - -
= 15V
off
E
E
on - - - -
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
off
R
= 20
V
Ω ,
G
GE
T
J
= 150ºC , V = 15V
GE
V
= 400V
CE
V
= 400V
CE
T
J
= 150ºC
I
= 40A
C
T
J
= 25ºC
I
= 20A
C
10
20
25
15
20
25
30
35
40
20
25
10
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
200
180
160
140
120
100
80
420
360
300
240
180
120
60
E
E
on - - - -
off
t f i
t
d(off) - - - -
R
= 20
VGE = 15V
Ω ,
T
J
= 150ºC, V = 15V
GE
G
VCE = 400V
V
= 400V
CE
I
= 40A
C
I
= 20A
C
I
= 40A
C
IC = 20A
60
0
30
40
50
60
70
80
90
100
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
180
160
140
120
100
80
140
130
120
110
100
90
240
200
160
120
80
210
t f i
t
d(off) - - - -
t f i
t
d(off) - - - -
180
150
120
90
R
G
= 20 , V = 15V
Ω
GE
R
G
= 20 , V = 15V
Ω
GE
V
= 400V
CE
V
= 400V
CE
I
= 20A
C
T
J
= 150ºC
T
J
= 25ºC
I = 40A
C
40
60
60
80
0
30
50
75
100
125
150
15
20
25
30
35
40
TJ - Degrees Centigrade
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
180
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
17
t r i
td(on)
- - - -
t r i
t
d(on) - - - -
16
15
14
13
12
11
10
R
G
= 20 , V = 15V
Ω
T
J
= 150ºC, V = 15V
GE
GE
I
= 40A
C
V
= 400V
V
= 400V
CE
CE
T
J
= 150ºC
I
= 20A
C
T
J
= 25ºC
60
40
20
0
20
30
40
50
60
70
80
90
100
10
15
20
25
30
35
40
IC - Amperes
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
90
80
70
60
50
40
30
20
10
18
t r i
t
d(on) - - - -
17
16
15
14
13
12
11
10
R
G
= 20 , V = 15V
Ω
GE
V
= 400V
CE
I
= 40A
C
I
= 20A
C
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_20N65B3D1(3D-Y42) 02-15-2015
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