IXYA20N65C3D1 [IXYS]
XPTTM 650V IGBT;
| 型号： | IXYA20N65C3D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | XPTTM 650V IGBT 双极性晶体管 |
| 文件： | 总7页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
XPTTM 650V IGBT
GenX3TM w/Diode
VCES = 650V
IC110 = 20A
VCE(sat) 2.50V
tfi(typ) = 28ns
IXYA20N65C3D1
IXYP20N65C3D1
Extreme Light Punch Through
IGBT for 20-60kHz Switching
TO-263 AA (IXYA)
G
E
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
C (Tab)
TJ = 25°C to 175°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-220AB (IXYP)
IC25
IC110
IF110
ICM
TC = 25°C
50
20
18
A
A
A
A
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
G
105
C
C (Tab)
E
IA
EAS
TC = 25°C
TC = 25°C
10
A
200
mJ
G = Gate
E = Emitter
C
= Collector
SSOA
VGE = 15V, TVJ = 150°C, RG = 20
ICM = 40
A
Tab = Collector
(RBSOA)
Clamped Inductive Load
VCE VCES
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
10
μs
Features
(SCSOA)
RG = 82, Non Repetitive
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Packages
PC
TC = 25°C
200
W
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
Md
FC
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in
N/lb
High Power Density
Extremely Rugged
Weight
TO-263
TO-220
2.5
3.0
g
g
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
650
3.5
Typ.
Max.
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
10 A
400 A
TJ = 150C
TJ = 150C
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 20A, VGE = 15V, Note 1
2.27
2.44
2.50
V
V
High Frequency Power Inverters
© 2015 IXYS CORPORATION, All Rights Reserved
DS100576C(3/15)
IXYA20N65C3D1
IXYP20N65C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263 Outline
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
7
12
S
Cies
Coes
Cres
822
67
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
19
Qg(on)
Qge
Qgc
30
6
nC
nC
nC
1. Gate
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
2. Collector
3. Emitter
4. Collector
Bottom Side
15
td(on)
tri
Eon
td(off)
tfi
19
34
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
0.43
80
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VCE = 400V, RG = 20
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
28
Note 2
Eof
0.35
0.65 mJ
f
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
td(on)
tri
Eon
td(off)
tfi
18
33
ns
ns
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
Inductive load, TJ = 150°C
E
9.65
10.41
.380
.405
IC = 20A, VGE = 15V
0.70
96
mJ
ns
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
VCE = 400V, RG = 20
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
36
ns
Note 2
Eoff
0.40
mJ
RthJC
RthCS
0.65 °C/W
°C/W
TO-220
0.50
TO-220 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 20A, VGE = 0V, Note 1
2.5
V
V
TJ = 150C
1.5
11
IRM
A
IF = 20A, VGE = 0V,
-diF/dt = 300A/μs, VR = 400V, TJ = 150°C
trr
135
ns
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
RthJC
1.85 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYA20N65C3D1
IXYP20N65C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
40
35
30
25
20
15
10
5
100
80
60
40
20
0
V
= 15V
GE
V
= 15V
13V
12V
GE
11V
10V
14V
13V
12V
11V
9V
10V
9V
8V
8V
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
40
35
30
25
20
15
10
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15V
GE
V
= 15V
GE
14V
13V
12V
11V
10V
I
= 40A
C
I
= 20A
C
9V
8V
7V
I
= 10A
0
C
0
-50
-25
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
60
50
40
30
20
10
0
8
7
6
5
4
3
2
1
T
J
= 25ºC
I
= 40A
C
T
J
= 150ºC
25ºC
- 40ºC
20A
10A
4
5
6
7
8
9
10
11
12
13
8
9
10
11
12
13
14
15
VGE - Volts
VGE - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65C3D1
IXYP20N65C3D1
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
16
14
12
10
8
T
J
= - 40ºC
VCE = 325V
IC = 20A
V
= 10V
CE
25ºC
I
G = 10mA
150ºC
6
6
4
4
2
2
0
0
0
4
8
12
16
20
24
28
32
0
5
10
15
20
25
30
35
40
45
50
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
= 1 MHz
f
40
30
20
10
0
C
C
ies
oes
T
= 150ºC
J
R
= 20
Ω
dv / dt < 10V / ns
G
C
res
10
100
200
300
400
500
600
700
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
Fig. 11. Forward-Bias Safe Operating Area
1000
100
10
1
V
Limit
CE(sat)
D = 0.5
D = 0.2
D = 0.1
25µs
0.1
100µs
D = tp / T
D = 0.05
t
p
D = 0.02
D = 0.01
1
T
= 175ºC
= 25ºC
J
1ms
T
Single Pulse
T
C
Single Pulse
10ms
DC
0.01
0.1
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1
10
100
1000
VDS - Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA20N65C3D1
IXYP20N65C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
7
6
5
4
3
2
1
0
E
R
E
on - - - -
off
E
E
on - - - -
off
= 20
V
= 15V
Ω ,
G
GE
T
= 150ºC , V = 15V
GE
J
V
= 400V
CE
V
= 400V
CE
T
J
= 150ºC
I
= 40A
C
T
J
= 25ºC
I
= 20A
C
10
20
25
15
20
25
30
35
40
20
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
55
50
45
40
35
30
25
20
270
240
210
180
150
120
90
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
E
E
on - - - -
off
t f i
t
d(off) - - - -
R
= 20
VGE = 15V
Ω ,
T
J
= 150ºC, V = 15V
GE
G
VCE = 400V
V
= 400V
CE
I
= 20A
C
I
= 40A
C
I
= 40A
C
IC = 20A
60
30
40
50
60
70
80
90
100
25
50
75
100
125
150
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
44
40
36
32
28
24
20
112
55
50
45
40
35
30
25
20
130
120
110
100
90
t f i
t
d(off) - - - -
t f i
t
d(off) - - - -
104
96
88
80
72
64
R
G
= 20 , V = 15V
Ω
GE
R
G
= 20 , V = 15V
Ω
GE
V
= 400V
CE
V
= 400V
CE
I
= 20A
C
T = 150ºC
J
I
= 40A
C
80
T = 25ºC
J
70
60
50
75
100
125
150
10
15
20
25
30
35
40
TJ - Degrees Centigrade
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65C3D1
IXYP20N65C3D1
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
td(on)
- - - -
100
90
80
70
60
50
40
30
20
10
0
30
28
26
24
22
20
18
16
14
12
10
280
240
200
160
120
80
140
120
100
80
t r i
t r i
t
d(on) - - - -
R
G
= 20 , V = 15V
Ω
GE
T
J
= 150ºC, V = 15V
GE
V
= 400V
CE
V
= 400V
CE
T
J
= 25ºC
I
= 40A
C
60
T
J
= 150ºC
40
I
= 20A
C
40
20
0
0
20
25
0
30
40
50
60
70
80
90
100
10
15
20
25
30
35
40
IC - Amperes
RG - Ohms
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
120
100
80
60
40
20
0
34
30
26
22
18
14
10
t r i
t
d(on) - - - -
R
G
= 20 , V = 15V
Ω
GE
V
= 400V
CE
I
I
= 40A
C
= 20A
C
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 23. Reverse Recovery Charge vs. -diF/dt
Fig. 22. Diode Forward Characteristics
40
35
30
25
20
15
10
5
1.6
T = 150ºC
J
I
F
= 30A
1.4
1.2
1.0
0.8
0.6
0.4
V
= 400V
R
20A
T
= 150ºC
J
T
J
= 25ºC
10A
0
0.5
1
1.5
2
2.5
200
300
400
500
600
700
800
900
1000 1100 1200
-diF/ dt (A/µs)
VF (V)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA20N65C3D1
IXYP20N65C3D1
Fig. 24 Reverse Recovery Current vs. -diF/dt
Fig. 25. Reverse Recovery Time vs. -diF/dt
26
24
22
20
18
16
14
12
10
8
180
160
140
120
100
80
T
= 150ºC
= 400V
J
T
= 150ºC
J
V
R
V
= 400V
R
10A
20A
I
F
= 40A
I
F
= 40A
20A
10A
60
200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400
diF/dt (A/µs)
200
300
400
500
600
700
800
900
1000 1100 1200
-di /dt (A/µs)
F
4
I
Fig. 26. Dynamic Parameters QRR, RR vs.
Fig. 27. Maximum Transient Thermal Impedance (Diode)
Junction Temperature
AAAAA
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
= 400V
R
I
F
= 20A
1
D = 0.5
-diF /dt = 300A/µs
D = 0.2
D = 0.1
D = 0.05
D = tp / T
K
I
RR
F
D = 0.02
D = 0.01
Single Pulse
0.1
t
p
T
K
Q
RR
F
0.01
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0
20
40
60
80
100
120
140
160
TJ (ºC)
Pulse Width - Second
Fig. 28. Cauer Thermal Network
IGBT
Ri (°C/W)
i
Ci (J/°C)
0.0017715
0.0166820
0.0391660
1
2
3
0.170320
0.136990
0.090011
DIODE
i
Ri (°C/W)
0.331730
0.768860
0.285550
Ci (J/°C)
1
2
3
0.0002858
0.0037423
0.0432130
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXY_20N65C3(3D) 01-21-15-B
相关型号：
IXYB82N120C3H1
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN
IXYS
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