IXYF30N170CV1 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | IXYF30N170CV1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总8页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
High Voltage XPTTM
IGBT w/ Diode
VCES = 1700V
IC110 = 20A
VCE(sat) 4.0V
tfi(typ) = 95ns
IXYF30N170CV1
(Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
1700
1700
V
V
TJ = 25°C to 175°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
1
2
Isolated Tab
5
IC25
IC110
IF110
ICM
TC = 25°C
36
20
20
A
A
A
A
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
1 = Gate
2 = Emitter
5 = Collector
260
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 2.7
Clamped Inductive Load
ICM = 120
1360
A
V
PC
TC = 25°C
230
W
Features
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
-55 ... +175
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Isolated Mounting Surface
2500V~ Electrical Isolation
FC
Mounting Force
20..120 / 4.5..27
Nm/lb.in.
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
VISOL
Weight
50/60Hz, 1 Minute
2500
8
V~
g
Advantages
Low Gate Drive Requirement
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
1700
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = 0.8 • VCES, VGE = 0V
V
V
5.0
Applications
25 A
Switch-Mode and Resonant-Mode
Note 3, TJ = 125C
4 mA
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 30A, VGE = 15V, Note 1
3.5
4.6
4.0
V
V
TJ = 150C
AC Switches
© 2017 IXYS CORPORATION, All Rights Reserved
DS100820A(7/17)
IXYF30N170CV1
ISOPLUS i4-PakTM (HV) Outline
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
A
E
U
S
gfs
IC = 30A, VCE = 10V, Note 1
Gate Input Resistance
17
28
S
Q
A2
RGi
2.8
T
D
Cies
Coes
Cres
3100
210
55
pF
pF
pF
R
4
VCE = 25V, VGE = 0V, f = 1MHz
L1
1
2
3
Qg(on)
Qge
Qgc
150
15
nC
nC
nC
c
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
65
b1
A1
b
e
e1
td(on)
tri
Eon
td(off)
tfi
16
33
ns
ns
Inductive load, TJ = 25°C
Pin 1 = Gate
Pin2
=
=
Emitter
Collector
Isolated
Pin
3
IC = 30A, VGE = 15V
Tab
4
=
3.6
143
95
mJ
ns
VCE = 0.5 • VCES, RG = 2.7
Note 3
ns
Eof
1.8
mJ
f
td(on)
tri
Eon
td(off)
tfi
16
33
ns
ns
Inductive load, TJ = 150°C
IC = 30A, VGE = 15V
5.5
193
134
3.5
mJ
ns
VCE = 0.5 • VCES, RG = 2.7
Note 3
ns
Eoff
mJ
RthJC
RthCS
0.65 °C/W
°C/W
0.15
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Value
Symbol
Test Conditions
Min. Typ.
Max.
VF
3.5
V
V
IF = 30A,VGE = 0V, Note 1
TJ = 150°C
3.7
32
IRM
trr
A
IF = 30A,VGE = 0V, -diF/dt = 500A/μs,
VR = 1200V, TJ = 150°C
175
ns
RthJC
0.86°C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Part must be heatsunk for high-temp Ices measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYX30N170CV1
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
60
50
40
30
20
10
0
300
250
200
150
100
50
V
= 15V
V
= 15V
GE
GE
13V
11V
10V
9V
14V
13V
12V
8V
7V
6V
11V
10V
9V
8V
7V
6V
0
0
0
6
1
2
3
4
5
6
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150oC
60
50
40
30
20
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 15V
GE
V
= 15V
GE
13V
11V
10V
9V
I
= 60A
C
8V
I
= 30A
C
7V
I
= 15A
C
6V
5V
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
6
7
8
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
80
70
60
50
40
30
20
10
0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
T
= 25ºC
J
I
= 60A
30A
C
T
J
= 150oC
25oC
- 40oC
15A
12
4
5
6
7
8
9
7
8
9
10
11
13
14
15
VGE - Volts
VGE - Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXYF30N170CV1
Fig. 7. Transconductance
Fig. 8. Gate Charge
45
40
35
30
25
20
15
10
5
16
14
12
10
8
T
J
= - 40oC
VCE = 850V
IC = 30A
IG = 10mA
25oC
150oC
6
4
2
0
0
0
10
20
30
40
50
60
70
80
90
0
20
40
60
80
100
120
140
160
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
140
120
100
80
C
C
ies
oes
60
40
T
J
= 150oC
C
R = 2.7
Ω
G
20
res
= 1 MHz
5
f
dv / dt < 10V / ns
10
0
0
10
15
20
25
30
35
40
200
400
600
800
1000
1200
1400
1600
1800
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYF30N170CV1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
10
9
8
7
6
5
4
3
2
1
0
20
16
12
8
12
10
8
30
25
20
15
10
5
E
E
E
R
E
off
on
off
on
= 15V
GE
T = 150ºC , V = 15V
= 2.7
V
Ω
J
GE
G
V
= 850V
V
= 850V
CE
CE
T
J
= 150oC
I
= 60A
C
6
= 25oC
4
T
J
4
2
I
= 30A
24
C
0
0
0
15
20
25
30
35
40
45
50
55
60
3
6
9
12
15
18
21
27
30
IC - Amperes
RG - Ohms
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
180
160
140
120
100
80
700
600
500
400
300
200
100
10
9
8
7
6
5
4
3
2
1
0
20
18
16
14
12
10
8
E
R
E
t f i
td(off)
off
on
= 2.7
V
GE = 15V
Ω
T = 150oC, V = 15V
G
J GE
VCE = 850V
V
= 850V
CE
I
= 60A
C
I
= 30A
C
I
= 60A
C
6
4
IC = 30A
2
0
60
25
50
75
100
125
150
3
6
9
12
15
18
21
24
27
30
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
160
140
120
100
80
220
200
180
160
140
120
100
200
180
160
140
120
100
80
260
t f i
td(off)
t f i
td(off)
240
220
200
180
160
140
120
100
R
G
= 2.7 , V = 15V
Ω
GE
R
G
= 2.7 , V = 15V
Ω
GE
I
= 60A
C
V
= 850V
CE
V
= 850V
CE
T
J
= 150oC
I
= 30A
C
T
J
= 25oC
60
60
40
40
25
50
75
100
125
150
15
20
25
30
35
40
45
50
55
60
IC - Amperes
TJ - Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXYF30N170CV1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
120
100
80
60
40
20
0
20
180
160
140
120
100
80
55
50
45
40
35
30
25
20
15
10
t r i
td(on)
t r i
td(on)
19
18
17
16
15
14
T = 150oC, V = 15V
R
G
= 2.7 , V = 15V
Ω
GE
J
GE
V
= 850V
CE
V
= 850V
CE
T
J
= 150oC
I
= 60A
T
J
= 25oC
C
60
I
= 30A
C
40
20
0
15
20
25
30
35
40
45
50
55
60
3
6
9
12
15
18
21
24
27
30
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
120
100
80
60
40
20
0
20
19
18
17
16
15
14
t r i
td(on)
R
G
= 2.7 , V = 15V
Ω
GE
V
= 850V
CE
I
I
= 60A
C
= 30A
C
25
50
75
100
125
150
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_30N170CV1(7T-AT653) 3-29-17-A
IXYF30N170CV1
Fig. 21. Diode Forward Characteristics
Fig. 22. Reverse Recovery Charge vs. -diF/dt
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
100
80
60
40
20
0
T = 150oC
J
V
= 1200V
R
T
J
= 25oC
I
= 60A
F
T
J
= 150oC
30A
15A
0
1
2
3
4
5
6
7
300
350
400
450
500
550
600
650
700
750
800
800
10
-diF/ dt (A/μs)
VF (V)
Fig. 23. Reverse Recovery Current vs. -diF/dt
Fig. 24. Reverse Recovery Time vs. -diF/dt
55
50
45
40
35
30
25
20
15
260
240
220
200
180
160
140
120
100
T = 150oC
J
T = 150oC
J
V
= 1200V
R
V
= 1200V
R
I
= 60A
F
I
= 60A, 30A, 15A
F
30A
15A
300
400
500
600
700
800
300
400
500
600
700
diF/dt (A/μs)
-diF/dt (A/μs)
I
Fig. 25. Dynamic Parameters QRR, RR vs.
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
Junction Temperature
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1
V
= 1200V
R
I
= 30A
F
-diF/dt = 500A/μs
K
Q
RR
F
K
I
RR
F
0.1
0.0001
0
20
40
60
80
100
120
140
160
0.001
0.01
0.1
1
TJ (ºC)
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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