IXYB82N120C3H1 [IXYS]
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN;
| 型号： | IXYB82N120C3H1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总7页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V XPTTM IGBT
GenX3TM w/ Diode
VCES = 1200V
IC110 = 82A
VCE(sat) ≤ 3.2V
tfi(typ) = 93ns
IXYB82N120C3H1
High-Speed IGBT
for 20-50 kHz Switching
PLUS264TM
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
G
C
E
TJ = 25°C to 150°C, RGE = 1MΩ
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
Tab
IC25
TC = 25°C (Chip Capability)
Lead Current Limit
TC = 110°C
164
160
82
A
A
A
A
G = Gate
E = Emitter
C
=
Collector
ILRMS
IC110
IF110
Tab = Collector
TC = 110°C
42
ICM
TC = 25°C, 1ms
320
A
IA
EAS
TC = 25°C
TC = 25°C
41
A
800
mJ
Features
SSOA
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
ICM = 164
A
z
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
High Current Handling Capability
International Standard Package
(RBSOA)
@VCE ≤ VCES
z
z
z
PC
TC = 25°C
1040
W
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
z
z
z
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
FC
Mounting Force
30..120 / 6.7..27
10
N/lb.
g
z
Weight
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
1200
3.0
Typ.
Max.
z
z
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z
5.0
z
z
50 μA
mA
±100 nA
z
TJ = 125°C
TJ = 125°C
3
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 82A, VGE = 15V, Note 1
2.75
3.50
3.20
V
V
© 2013 IXYS CORPORATION, All Rights Reserved
DS100355E(6/13)
IXYB82N120C3H1
PLUS264TM (IXYB) Outline
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
30
50
S
Cies
Coes
Cres
4060
285
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
110
Qg(on)
Qge
Qgc
215
26
nC
nC
nC
Pin 1 = Gate
Pin 2,4 = Collector
Pin 3 = Emitter
IC = 82A, VGE = 15V, VCE = 0.5 • VCES
84
td(on)
tri
Eon
td(off)
tfi
29
78
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
4.95
192
93
280
VCE = 0.5 • VCES, RG = 2Ω
Note 2
Eof
2.78
5.00 mJ
f
td(on)
tri
29
90
ns
ns
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
Eon
td(off)
tfi
7.45
200
95
mJ
ns
VCE = 0.5 • VCES, RG = 2Ω
ns
Note 2
Eoff
3.70
mJ
RthJC
RthCS
0.12 °C/W
°C/W
0.13
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 60A, VGE = 0V, Note 1
2.7
V
V
TJ = 125°C
TJ = 125°C
1.9
41
IRM
A
IF = 60A, VGE = 0V,
-diF/dt = 700A/μs, VR = 600V
trr
420
ns
0.35 °C/W
RthJC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYB82N120C3H1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
300
250
200
150
100
50
VGE = 15V
11V
160
140
120
100
80
VGE = 15V
13V
13V
11V
10V
9V
10V
12V
9V
8V
7V
6V
8V
60
7V
40
6V
5V
20
5V
0
0
0
0
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
160
140
120
100
80
VGE = 15V
VGE = 15V
13V
11V
10V
9V
I C = 164A
I C = 82A
I C = 41A
8V
7V
60
40
6V
5V
20
0
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
6
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
140
120
100
80
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
TJ = 25ºC
I C = 164A
60
TJ = 125ºC
25ºC
82A
40
- 40ºC
20
41A
0
6
7
8
9
10
11
12
13
14
15
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXYB82N120C3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
80
70
60
50
40
30
20
10
0
16
14
12
10
8
TJ = - 40ºC
VCE = 600V
I C = 82A
I G = 10mA
25ºC
125ºC
6
4
2
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
180
200
220
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
180
160
140
120
100
80
10,000
1,000
100
C
ies
C
C
oes
60
res
TJ = 150ºC
RG = 2
40
Ω
20
dv / dt < 10V / ns
= 1 MHz
5
f
10
0
0
10
15
20
25
30
35
40
200
300
400
500
600
700
800
900
1000 1100 1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYB82N120C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
9
8
7
6
5
4
3
2
1
8
7
6
5
4
3
2
1
0
16
14
12
10
8
E
E
on - - - -
VGE = 15V
E
E
on - - - -
off
RG = 2
off
Ω ,
VCE = 600V
TJ = 125ºC , VGE = 15V
VCE = 600V
I C = 80A
TJ = 125ºC
6
TJ = 25ºC
4
I C = 40A
2
0
40
50
60
70
IC - Amperes
80
90
100
2
4
6
8
10
12
14
16
18
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
200
180
160
140
120
100
80
780
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
9
8
7
6
5
4
3
2
1
E
E
on - - - -
VGE = 15V
t f i
t
d(off) - - - -
off
RG = 2
700
620
540
460
380
300
220
140
TJ = 125ºC, VGE = 15V
Ω ,
VCE = 600V
VCE = 600V
I C = 80A
I C = 40A
I C = 40A
I C = 80A
60
40
25
50
75
TJ - Degrees Centigrade
100
125
2
4
6
8
10
12
14
16
18
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
240
200
160
120
80
280
260
240
220
200
180
160
280
240
200
160
120
80
240
230
220
210
200
190
180
170
t f i
t
d(off) - - - -
t f i
td(off)
- - - -
RG = 2
, VGE = 15V
Ω
RG = 2
,
VGE = 15V
Ω
VCE = 600V
VCE = 600V
I C = 40A
I C = 80A
TJ = 125ºC
TJ = 25ºC
40
40
0
0
25
50
75
TJ - Degrees Centigrade
100
125
40
50
60
70
IC - Amperes
80
90
100
© 2013 IXYS CORPORATION, All Rights Reserved
IXYB82N120C3H1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
140
120
100
80
60
160
140
120
100
80
60
55
50
45
40
35
30
25
20
tr i
td(on)
- - - -
t r i
td(on) - - - -
RG = 2
,
VGE = 15V
Ω
50
40
30
20
10
0
TJ = 125ºC, VGE = 15V
VCE = 600V
VCE = 600V
TJ = 125ºC
I C = 80A
TJ = 25ºC
60
60
40
I C = 40A
40
20
20
0
40
50
60
70
80
90
100
2
4
6
8
10
12
14
16
18
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
140
120
100
80
36
34
32
30
28
26
24
22
tr i
td(on) - - - -
RG = 2
, VGE = 15V
Ω
VCE = 600V
I C = 80A
60
40
I C = 40A
20
0
25
50
75
100
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_82N120C3(8M)12-13-12-A
IXYB82N120C3H1
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt
Fig. 21. Typ. Forward Characteristics
12
11
10
9
120
100
80
60
40
20
0
TVJ = 125ºC
VR = 600V
TVJ = 25ºC
120A
60A
TVJ = 125ºC
8
7
6
30A
5
4
0
0.5
1
1.5
2
2.5
3
600
700
800
900
1000
1100
1200
1300
VF - Volts
-diF/dt - [A/µs]
Fig. 24. Typ. Recovery Time trr vs. -diF/dt
Fig. 23. Typ. PeakReverse Current IRM vs. -diF/dt
90
80
70
60
50
40
30
20
700
600
500
400
300
200
TVJ = 125ºC
TVJ = 125ºC
VR = 600V
120A
VR = 600V
60A
30A
120A
60A
30A
600
700
800
900
1000
1100
1200
1300
600
700
800
900
1000
1100
1200
1300
-diF/dt - [A/µs]
-diF/dt - [A/µs]
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt
Fig. 26. Maximum Transient Thermal Impedance
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
1
TVJ = 125ºC
VR = 600V
120A
60A
30A
0.1
0.01
0.001
600
700
800
900
1000
1100
1200
1300
0.01
0.1
1
10
-diF/dt - [A/µs]
Pulse Width - Seconds
© 2013 IXYS CORPORATION, All Rights Reserved
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