IXYA8N90C3D1 [IXYS]
900V XPTTM IGBT;
| 型号： | IXYA8N90C3D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | 900V XPTTM IGBT 双极性晶体管 |
| 文件： | 总7页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
900V XPTTM IGBT
GenX3TM w/ Diode
VCES = 900V
IC110 = 8A
VCE(sat) 3.0V
tfi(typ) = 130ns
IXYA8N90C3D1
IXYP8N90C3D1
High-Speed IGBT
for 20-50 kHz Switching
TO-263 AA (IXYA)
G
E
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 175°C
900
900
V
V
C (Tab)
TJ = 25°C to 175°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-220AB (IXYP)
IC25
IC110
IF110
TC = 25°C
TC = 110°C
TC = 110°C
20
8
12
A
A
A
G
ICM
TC = 25°C, 1ms
48
A
C
C (Tab)
E
IA
EAS
TC = 25°C
TC = 25°C
4
A
15
mJ
G = Gate
E = Emitter
C
= Collector
SSOA
VGE = 15V, TVJ = 150°C, RG = 30
ICM = 16
A
Tab = Collector
(RBSOA)
Clamped Inductive Load
@VCE VCES
PC
TC = 25°C
125
W
Features
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Md
FC
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
International Standard Packages
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
950
3.5
Typ.
Max.
Applications
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
60 A
TJ = 125C
TJ = 125C
400 μA
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 8A, VGE = 15V, Note 1
2.15
2.60
3.00
V
V
© 2014 IXYS CORPORATION, All Rights Reserved
DS100400C(12/14)
IXYA8N90C3D1
IXYP8N90C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263 Outline
Min.
Typ.
Max.
gfs
IC = 8A, VCE = 10V, Note 1
2.9
4.8
S
Cies
Coes
Cres
400
30
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
7.8
Qg(on)
Qge
Qgc
13.3
3.4
nC
nC
nC
1. Gate
IC = 8A, VGE = 15V, VCE = 0.5 • VCES
2. Collector
3. Emitter
4. Collector
Bottom Side
5.8
td(on)
tri
Eon
td(off)
tfi
16
20
ns
ns
mJ
ns
Inductive load, TJ = 25°C
IC = 8A, VGE = 15V
0.46
40
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VCE = 0.5 • VCES, RG = 30
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
130
0.18
ns
Note 2
Eof
0.50 mJ
f
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
td(on)
tri
Eon
td(off)
tfi
17
22
ns
ns
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
Inductive load, TJ = 125°C
E
9.65
10.41
.380
.405
IC = 8A, VGE = 15V
1.00
75
mJ
ns
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
VCE = 0.5 • VCES, RG = 30
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
163
0.22
ns
Note 2
Eoff
mJ
RthJC
RthCS
1.2 °C/W
°C/W
TO-220
0.50
TO-220 Outline
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Value
Symbol
Test Conditions
Min. Typ.
Max.
VF
3.0
2.0
V
V
IF = 10A,VGE = 0V, Note 1
TJ = 150°C
IRM
trr
7.5
A
IF = 10A,VGE = 0V, -diF/dt = 200A/μs, TJ = 100°C
VR = 600V
TJ = 100°C
114
ns
RthJC
2.5 °C/W
Pins: 1 - Gate
2 - Collector
3 - Emitter
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYA8N90C3D1
IXYP8N90C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
45
40
35
30
25
20
15
10
5
16
14
12
10
8
V
= 15V
GE
13V
12V
V
= 15V
GE
11V
13V
10V
9V
12V
11V
6
10V
4
8V
7V
9V
8V
7V
2
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
16
14
12
10
8
V
= 15V
GE
V
= 15V
GE
13V
12V
11V
I
= 16A
C
10V
I
= 8A
C
9V
8V
6
4
2
I
= 4A
C
7V
6V
0
-50
-25
0
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
20
18
16
14
12
10
8
7
6
5
4
3
2
1
T
= 25ºC
J
I
= 16A
C
T
= 150ºC
25ºC
J
- 40ºC
6
8A
4A
4
2
0
8
9
10
11
12
13
14
15
3.5
4.5
5.5
6.5
7.5
8.5
9.5
10.5
11.5
VGE - Volts
VGE - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXYA8N90C3D1
IXYP8N90C3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
8
7
6
5
4
3
2
1
0
16
14
12
10
8
VCE = 450V
IC = 8A
T
J
= - 40ºC
IG = 10mA
25ºC
150ºC
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
12
14
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
18
16
14
12
10
8
1,000
100
10
C
ies
C
oes
6
T
J
= 150ºC
4
C
res
R
G
= 30
Ω
2
= 1 MHz
5
dv / dt < 10V / ns
f
1
0
200
0
10
15
20
25
30
35
40
300
400
500
600
700
800
900
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
aaaa
3
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA8N90C3D1
IXYP8N90C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.6
0.5
0.4
0.3
0.2
0.1
5
4
3
2
1
0
E
R
E
on - - - -
E
E
on - - - -
off
off
= 30
V
Ω
= 15V
GE
G
T
= 125ºC , V = 15V
GE
J
V
= 450V
CE
V
= 450V
CE
I
= 16A
C
T
J
= 125ºC
I
= 8A
C
T
J
= 25ºC
8
9
10
11
12
13
14
15
16
30
60
90
120
150
180
210
240
270
300
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
280
240
200
160
120
80
280
240
200
160
120
80
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2.4
2.0
1.6
1.2
0.8
0.4
0.0
E
R
E
t f i
t
d(off) - - - -
on - - - -
off
= 30
V
Ω
GE = 15V
T = 125ºC, V = 15V
J GE
G
VCE = 450V
V
= 450V
CE
I
= 16A
C
I
= 8A
C
IC = 8A
I
= 16A
180
C
40
40
0
0
30
60
90
120
150
210
240
270
300
25
50
75
100
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
220
200
180
160
140
120
100
80
110
200
100
90
80
70
60
50
40
30
20
t f i
t
d(off) - - - -
t f i
t
d(off) - - - -
100
90
80
70
60
50
40
30
20
180
160
140
120
100
80
R
G
= 30 , V = 15V
Ω
GE
R
G
= 30 , V = 15V
Ω
GE
V
= 450V
CE
V
= 450V
CE
I
= 8A
C
T
J
= 125ºC
T
J
= 25ºC
I
= 16A
C
60
60
40
40
8
9
10
11
12
13
14
15
16
25
50
75
100
125
IC - Amperes
TJ - Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
IXYA8N90C3D1
IXYP8N90C3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
td(on)
- - - -
70
60
50
40
30
20
10
0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
200
160
120
80
100
80
60
40
20
0
t r i
t r i
t
d(on) - - - -
R
G
= 30 , V = 15V
Ω
GE
T
J
= 125ºC, V = 15V
GE
V
= 450V
CE
V
= 450V
CE
I
= 16A
C
T
J
= 125ºC
I
= 8A
C
T
J
= 25ºC
40
0
8
9
10
11
12
13
14
15
16
30
60
90
120
150
180
210
240
270
300
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
80
70
60
50
40
30
20
10
18.5
t r i
t
d(on) - - - -
18.0
17.5
17.0
16.5
16.0
15.5
15.0
R
G
= 30 , V = 15V
Ω
GE
V
= 450V
CE
I
= 16A
C
I
= 8A
C
25
50
75
100
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_8N90C3(1D) 10-20-11
IXYA8N90C3D1
IXYP8N90C3D1
Fig. 21. Forward current IF vs VF
Fig. 22.
Fig. 23.
Fig. 25.
Fig. 24.
Fig. 26.
Fig. 27. Transient thermal resistance junction to case
© 2014 IXYS CORPORATION, All Rights Reserved
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