MDP11N60TH [MGCHIP]
N-Channel MOSFET 600V, 11A, 0.55(ohm);
| 型号： | MDP11N60TH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 600V, 11A, 0.55(ohm) |
| 文件： | 总6页 (文件大小：1045K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDP11N60
N-Channel MOSFET 600V, 11A, 0.55Ω
General Description
Features
The MDP11N60 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
VDS = 600V
VDS = 660V
ID = 11A
@ VGS = 10V
@ VGS = 10V
RDS(ON) ≤ 0.55Ω
MDP11N60 is suitable device for SMPS, high Speed switching
and general purpose applications.
Applications
Power Supply
PFC
High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
VDSS
Rating
600
Unit
V
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
VDSS @ Tjmax
VGSS
660
V
±30
V
TC=25oC
TC=100oC
11
A
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
ID
6.9
A
IDM
PD
44
A
TC=25oC
182
W
W/ oC
Derate above 25 oC
1.45
4.5
Peak Diode Recovery dv/dt(3)
Dv/dt
EAS
V/ns
mJ
Single Pulse Avalanche Energy(4)
720
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
Rating
62.5
Unit
oC/W
RθJC
0.69
1
Dec. 2014 Version 2.2
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDP11N60TH
-55~150oC
TO-220
Tube
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 5.5A
VDS = 30V, ID = 5.5A
600
-
-
5.0
1
V
3.0
-
-
-
-
μA
nA
Ω
IGSS
-
100
0.55
-
RDS(ON)
gfs
0.45
13
-
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
38.4
11.2
14
-
-
-
Gate-Source Charge
Gate-Drain Charge
VDS = 480V, ID = 11A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Input Capacitance
1700
6.2
184
38
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
50
VGS = 10V, VDS = 300V, ID = 11A,
ns
RG = 25Ω(3)
Turn-Off Delay Time
Fall Time
td(off)
tf
76
33
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
IS
VSD
trr
-
-
-
-
11
-
A
V
IS = 11A, VGS = 0V
1.4
430
4.0
ns
μC
IF = 11A, dl/dt = 100A/μs(3)
Body Diode Reverse Recovery
Charge
Qrr
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤11.0A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C
DD
g
4. L=10.9mH, IAS=11A, VDD=50V, R =25Ω, Starting TJ=25°C
g
2
Dec. 2014 Version 2.2
MagnaChip Semiconductor Ltd.
30
25
20
15
10
5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Notes
Vgs=5.5V
=6.0V
1. 250㎲ Pulse Test
2. TC=25℃
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
VGS=20V
VGS=10.0V
5
10
15
20
25
0
5
10
15
20
25
30
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
※ Notes :
1. VGS = 10 V
2. ID = 5.5 A
※ Notes :
1. VGS = 0 V
2. 250 s Pulse Test
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
* Notes ;
1. VGS = 0 V
2. ID = 250㎂
1. VDS=30V
10
10
150℃
25℃
-55℃
25℃
150℃
1
1
0.1
0.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2
4
6
8
10
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Dec. 2014 Version 2.2
MagnaChip Semiconductor Ltd.
4000
3800
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
10
8
※ Note : ID = 11A
120V
300V
480V
Ciss
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
2
600
400
200
0
Crss
0
0.1
1
10
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
14
12
10
8
10 s
100 s
1 ms
10 ms
101
100
DC
100 ms
6
4
10-1
Single Pulse
TJ=Max rated
2
TC=25℃
10-2
10-1
0
25
100
101
102
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
100
10-1
10-2
single Pulse
RthJC = 0.69℃/W
TC = 25℃
D=0.5
0.2
0.1
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
0.05
0.02
JC
RΘ =0.69℃/W
JC
0.01
10-4
single pulse
10-3
10-5
10-2
10-1
100
101
1E-5
1E-4
1E-3
0.01
0.1
1
10
t1, Rectangular Pulse Duration [sec]
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Fig.11 Transient Thermal Response Curve
4
Dec. 2014 Version 2.2
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
5
Dec. 2014 Version 2.2
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Dec. 2014 Version 2.2
MagnaChip Semiconductor Ltd.
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