NTE227 [NTE]
Silicon NPN Transistor High Voltage Amp, Video Output; 硅NPN晶体管高电压放大器，视频输出
| 型号： | NTE227 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon NPN Transistor High Voltage Amp, Video Output |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE227
Silicon NPN Transistor
High Voltage Amp, Video Output
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (TA = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW
Power Dissipation (TCOLLECTOR LEAD = +25°C), PDmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Maximum Operating Junction Temperature, TJmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Thermal Resistance, Junction–to–Case (TCOLLECTOR LEAD = +25°C), RthJC . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Ambient (TA = +25°C), RthJA . . . . . . . . . . . . . . . . . . . . . . 147°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
Test Conditions
VCB = 260V
Min Typ Max Unit
–
–
–
–
100
100
–
nA
nA
IEBO
VEB = 6V
hFE
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
25
40
300
300
6
–
90
–
200
–
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA
V
V
V
V
V
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transition Frequency
V(BR)CBO IC = 100µA
–
–
V(BR)EBO IE = 10µA
–
–
VCE(sat) IC = 20mA, IB = 2mA
VBE(sat) IC = 20mA, IB = 2mA
–
0.25 1.0
0.74 1.0
–
fT
IC = 10mA
50
–
–
–
–
200 MHz
Base–Emitter Saturation Voltage
Capacitance
VBE(sat) IC = 10mA
Cib
0.76
70
V
–
pF
.200 (5.08)
.180 (4.57)
.100 (2.54)
.180
(4.57)
E B C
.594
(15.09)
.018 (0.46)
.050 (1.27)
.015 (0.38)
3.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R
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