BGA2712 [NXP]
MMIC wideband amplifier; MMIC宽带放大器器
| 型号： | BGA2712 |
| 厂家： | 
NXP |
| 描述： | MMIC wideband amplifier |
| 文件： | 总12页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGA2712
MMIC wideband amplifier
Product specification
2002 Sep 10
Supersedes data of 2002 Jan 31
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
FEATURES
PINNING
PIN
• Internally matched to 50 Ω
DESCRIPTION
• Wide frequency range (3.2 GHz at 3 dB bandwidth)
• Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness)
1
2, 5
3
VS
GND2
RF out
GND1
RF in
• 5 dBm saturated output power at 1 GHz
• Good linearity (11 dBm IP3(out) at 1 GHz)
• Unconditionally stable (K > 1.5).
4
6
APPLICATIONS
6
1
5
2
4
3
1
• LNB IF amplifiers
• Cable systems
• ISM
6
3
4
2, 5
• General purpose.
Top view
MAM455
DESCRIPTION
Marking code: E2-.
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
IS
s21
NF
PL(sat)
PARAMETER
DC supply voltage
CONDITIONS
TYP.
MAX.
UNIT
5
6
−
−
−
−
V
DC supply current
insertion power gain
noise figure
12.3
21.3
3.9
mA
dB
2
f = 1 GHz
f = 1 GHz
f = 1 GHz
dB
saturated load power
4.8
dBm
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
MIN.
MAX.
UNIT
RF input AC coupled
−
6
V
IS
supply current
−
35
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
operating junction temperature
maximum drive power
Ts ≤ 90 °C
−
200
+150
150
10
−65
−
°C
PD
−
dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 10
2
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to
solder point
Ptot = 200 mW; Ts ≤ 90 °C
300
K/W
CHARACTERISTICS
VS = 5 V; IS = 12.3 mA; Tj = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS
IS supply current
MIN.
TYP.
12.3
MAX.
UNIT
9
15
22
22
23
23
22
21
−
mA
2
s21
insertion power gain
f = 100 MHz
f = 1 GHz
20
20
20
20
19
16
12
8
20.8
21.3
22
dB
dB
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
dB
22
dB
21.2
19.3
14
dB
dB
RL IN
return losses input
return losses output
isolation
f = 1 GHz
dB
f = 2.2 GHz
f = 1 GHz
10
−
dB
RL OUT
17
15
31
36
−
20
−
dB
f = 2.2 GHz
f = 1.6 GHz
f = 2.2 GHz
f = 1 GHz
18
−
dB
2
s12
33
−
dB
39
−
dB
NF
noise figure
3.9
4.3
3.2
2
4.3
4.7
−
dB
f = 2.2 GHz
−
dB
BW
K
bandwidth
at s21 2 −3 dB below flat gain at 1 GHz 2.8
GHz
−
stability factor
f = 1 GHz
1.5
2.5
3
−
f = 2.2 GHz
3
−
−
PL(sat)
PL 1 dB
IP3(in)
IP3(out)
saturated load power f = 1 GHz
f = 2.2 GHz
4.8
1.3
0.2
−2
−
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
0
−
load power
at 1 dB gain compression; f = 1 GHz
−2
−4
−12
−14
9
−
at 1 dB gain compression; f = 2.2 GHz
−
input intercept point
f = 1 GHz
−10
−16
11
−
f = 2.2 GHz
−
output intercept point f = 1 GHz
f = 2.2 GHz
−
4
6
−
2002 Sep 10
3
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2712 MMIC. The device is internally matched to 50 Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2
and C3 should not be more than 100 pF for applications
above 100 MHz. However, when the device is operated
below 100 MHz, the capacitor value should be increased.
DC-block
100 pF
DC-block
100 pF
DC-block
100 pF
handbook, halfpage
input
output
MGU437
The 22 nF supply decoupling capacitor C1 should be
located as closely as possible to the MMIC.
Fig.3 Easy cascading application circuit.
Separate paths must be used for the ground planes of the
ground pins GND1 and GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
mixer
handbook, halfpage
from RF
circuit
to IF circuit
or demodulator
wideband
amplifier
MGU438
V
handbook, halfpage
s
oscillator
C1
V
s
Fig.4 Application as IF amplifier.
RF in
RF out
RF input
RF output
C2
C3
GND1
GND2
MGU435
mixer
handbook, halfpage
antenna
to IF circuit
or demodulator
Fig.2 Typical application circuit.
LNA
wideband
amplifier
MGU439
oscillator
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
Fig.5 Application as RF amplifier.
The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
mixer
handbook, halfpage
from modulation
or IF circuit
to power
amplifier
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
wideband
amplifier
MGU440
oscillator
In Fig.6 the MMIC is used as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Fig.6 Application as driver amplifier.
2002 Sep 10
4
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
45°
+2
+0.5
+0.2
+5
100 MHz
4 GHz
0.2
0.5
2
5
180°
0
0°
−5
−0.2
−0.5
−2
−45°
−135°
−1
MLD904
1.0
−90°
IS = 12.3 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.7 Input reflection coefficient (s11); typical values.
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
+0.2
45°
+2
+0.5
+5
4 GHz
0.2
0.5
2
5
180°
0
0°
100 MHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
−90°
MLD905
1.0
IS = 12.3 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.8 Output reflection coefficient (s22); typical values.
5
2002 Sep 10
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
MLD906
MLD907
0
25
handbook, halfpage
handbook, halfpage
2
s
12
(dB)
2
s
21
−10
(dB)
20
−20
−30
(1)
(2)
15
(3)
−40
−50
10
0
0
1000
2000
3000
4000
1000
2000
3000
4000
f (MHz)
f (MHz)
PD = −30 dBm; ZO = 50 Ω.
(1) IS = 15.1 mA; VS = 5.5 V.
(2) IS = 12.3 mA; VS = 5 V.
(3) IS = 10.1 mA; VS = 4.5 V.
IS = 12.3 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω.
Fig.9 Isolation ( s12 2) as a function of frequency;
typical values.
Fig.10 Insertion gain ( s21 2) as a function of
frequency; typical values.
MLD908
MLD909
10
10
handbook, halfpage
handbook, halfpage
P
L
P
L
(dBm)
(dBm)
(1)
5
5
(2)
(1)
(2)
(3)
0
0
(3)
−5
−5
−10
−10
−30
−20
−10
0
−30
−20
−10
0
P
(dBm)
P
(dBm)
D
D
f = 1 GHz; ZO = 50 Ω.
(1) VS = 5.5 V.
(2) VS = 5 V.
f = 2.2 GHz; ZO = 50 Ω.
(1) VS = 5.5 V.
(2) VS = 5 V.
(3) VS = 4.5 V.
(3) VS = 4.5 V.
Fig.11 Load power as a function of drive power at
1 GHz; typical values.
Fig.12 Load power as a function of drive power at
2.2 GHz; typical values.
2002 Sep 10
6
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
MLD903
MLD902
6
10
handbook, halfpage
handbook, halfpage
NF
K
8
(dB)
5
6
4
(1)
(3)
4
(2)
3
2
2
0
0
0
1000
2000
3000
1000
2000
3000
4000
f (MHz)
f (MHz)
ZO = 50 Ω.
(1) IS = 15.1 mA; VS = 5.5 V.
(2) S = 12.3 mA; VS = 5 V.
(3) IS = 10.1 mA; VS = 4.5 V.
I
IS = 12.3 mA; VS = 5 V; ZO = 50 Ω.
Fig.13 Noise figure as a function of frequency;
typical values.
Fig.14 Stability factor as a function of frequency;
typical values.
2002 Sep 10
7
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Scattering parameters
VS = 5 V; IS = 12.3 mA; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C;
s11
MAGNITUDE
s21
MAGNITUDE
s12
MAGNITUDE
s22
MAGNITUDE
K-
FACTOR
f (MHz)
ANGLE
(deg)
ANGLE
(deg)
ANGLE
(deg)
ANGLE
(deg)
(ratio)
(ratio)
(ratio)
(ratio)
100
200
0.04752
0.05643
0.09546
0.13547
0.17466
0.20739
0.24036
0.26469
0.29368
0.31261
0.31986
0.32544
0.31554
0.29374
0.26599
0.21222
0.17076
0.14479
0.11730
0.08946
0.06606
−13.48
22.73
10.9826
11.0172
11.0842
11.1812
11.3239
11.5760
11.8439
12.1222
12.3892
12.5808
12.6359
12.4802
12.2649
11.5087
10.4126
9.17830
8.12024
7.38827
6.96284
6.62125
6.32249
−1.753
−6.898
−15.64
−24.08
−32.64
−41.38
−50.97
−61.14
−72.07
−83.89
−96.79
−110.7
−125.2
−139.8
−152.8
−163.8
−171.0
−176.5
177.3
0.03355
0.03308
0.03111
0.02829
0.02501
0.02145
0.01788
0.01489
0.01262
0.01132
0.01102
0.01151
0.01238
0.01322
0.01362
0.01335
0.01239
0.01150
0.01108
0.01107
0.01178
−2.342
−7.340
−15.47
−21.84
−26.57
−30.44
−31.20
−28.60
−22.41
−12.86
−2.369
5.585
0.07706
0.07237
0.07314
0.07471
0.08218
0.10113
0.11792
0.13314
0.14376
0.14606
0.13749
0.11928
0.08992
0.05626
0.02424
0.02731
0.04752
0.06279
0.07643
0.09760
0.12925
−170.0
164.8
130.7
101.8
72.30
47.04
25.82
10.96
−1.624
−13.51
−24.90
−37.21
−51.50
−68.53
−110.2
159.1
135.0
132.1
142.1
153.5
160.6
1.5
1.5
1.6
1.7
1.9
2.0
2.3
2.6
3.0
3.2
3.2
3.1
3.0
3.1
3.3
4.0
4.9
5.8
6.4
6.7
6.6
400
39.62
600
37.16
800
32.62
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
27.40
23.23
18.36
13.54
8.127
1.984
−4.878
−13.05
−21.53
−28.39
−31.80
−31.52
−32.14
−35.25
−46.06
−64.65
9.990
11.44
10.70
9.622
10.22
15.36
19.97
171.3
27.62
165.6
34.46
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2002 Sep 10
9
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Sep 10
10
Philips Semiconductors
Product specification
MMIC wideband amplifier
BGA2712
NOTES
2002 Sep 10
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/02/pp12
Date of release: 2002 Sep 10
Document order number: 9397 750 10022
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NXP
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