FDMS9600S [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30V;
| 型号： | FDMS9600S |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30V 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2014
FDMS9600S
Dual N-Channel PowerTrench® MOSFETꢀ
Q1: 30V, 32A, 8.5mꢁ Q2: 30V, 30A, 5.5mꢁ
Features
General Description
Q1: N-Channel
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss "High Side" MOSFET is com-
plemented by a Low Conduction Loss "Low Side" SyncFET.
Max rDS(on) = 8.5mꢁ at VGS = 10V, ID = 12A
Max rDS(on) = 12.4mꢁ at VGS = 4.5V, ID = 10A
Q2: N-Channel
Max rDS(on) = 5.5mꢁ at VGS = 10V, ID = 16A
Max rDS(on) = 7.0mꢁ at VGS = 4.5V, ID = 14A
Applications
Synchronous Buck Converter for:
Low Qg high side MOSFET
Notebook System Power
Low rDS(on) low side MOSFET
Thermally efficient dual Power 56 package
Pinout optimized for simple PCB design
RoHS Compliant
General Purpose Point of Load
G1
D1
Q2
D1
5
6
7
8
4
3
2
1
D1
D1
S1/D2
G2
S2
S2
Q1
S2
Power 56
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
30
20
32
12
60
Q2
30
20
30
16
60
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
TC = 25°C
TA = 25°C
-Continuous
-Pulsed
(Note 1a)
A
ID
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
1.0
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RꢂJA
RꢂJA
RꢂJC
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
50
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
120
°C/W
3
1.2
Package Marking and Ordering Information
Device Marking
FDMS9600S
Device
FDMS9600S
Package
Power 56
Reel Size
Tape Width
Quantity
3000 units
13”
12mm
1
©2008 Fairchild Semiconductor Corporation
FDMS9600S Rev.D2
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
I
D = 250ꢃA, VGS = 0V
Q1
Q2
30
30
BVDSS
Drain to Source Breakdown Voltage
V
ID = 1mA, VGS = 0V
ꢄBVDSS
ꢀꢀꢀꢄTJ
Breakdown Voltage Temperature
Coefficient
ID = 250ꢃA, referenced to 25°C
Q1
Q2
Q1
Q2
Q1
Q2
35
29
mV/°C
ꢃA
I
D = 1mA, referenced to 25°C
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24V, VGS = 0V
VGS 20V, VDS= 0V
500
100
100
nA
nA
=
On Characteristics
V
GS = VDS, ID = 250ꢃA
Q1
Q2
1
1
1.5
1.8
3
3
VGS(th)
Gate to Source Threshold Voltage
V
VGS = VDS, ID = 1mA
ꢀꢄVGS(th)
ꢀꢄTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250ꢃA, referenced to 25°C
ID = 1mA, referenced to 25°C
Q1
Q2
-4.5
-6.0
mV/°C
V
V
GS = 10V, ID = 12A
GS = 4.5V, ID = 10A
7.0
9.2
8.6
4.5
5.3
5.4
8.5
12.4
13.0
5.5
7.0
8.3
Q1
Q2
VGS = 10V, ID = 12A , TJ = 125°C
rDS(on)
Drain to Source On Resistance
mꢁ
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 14A
VGS = 10V, ID = 16A , TJ = 125°C
V
V
DD = 10V, ID = 12A
DD = 10V, ID = 16A
Q1
Q2
54
68
gFS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1280
2300
525
1545
80
250
1.0
1.7
1705
3060
700
2055
120
375
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
ꢁ
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS = 15V, VGS = 0V, f= 1MHz
f = 1MHz
Switching Characteristics
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
13
17
6
11
42
54
12
32
23
31
12
20
67
86
22
51
td(on)
tr
td(off)
tf
Turn-On Delay Time
ns
ns
Rise Time
VDD = 10V, ID = 1A,
VGS = 10V, RGEN = 6ꢁ
Turn-Off Delay Time
Fall Time
ns
ns
Q1
Q2
Q1
Q2
Q1
Q2
9
13
29
Q1
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
nC
nC
nC
21
VDD = 15V, VGS = 4.5V, ID = 12A
3
8
2.7
6.5
Q2
VDD = 15V, VGS = 4.5V, ID = 16A
www.fairchildsemi.com
2
FDMS9600S Rev.D2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
Q1
Q2
2.1
3.5
IS
Maximum Continuous Drain-Source Diode Forward Current
A
V
Q1
Q2
0.7
0.4
0.5
1.2
1.0
1.0
VGS = 0V, IS = 2.1A
GS = 0V, IS = 3.5A
VGS = 0V, IS = 8.2A
(Note 2)
(Note 2)
V
VSD
Forward Voltage
Source to Drain Diode
(Note 2) Q2
Q1
Q2
Q1
Q2
33
27
20
33
Q1
trr
Reverse Recovery Time
ns
IF = 12A, di/dt = 100A/ꢃs
Q2
Qrr
Reverse Recovery Charge
nC
IF = 16A, di/dt = 300A/ꢃs
Notes:
2
1:
R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
ꢂCA
ꢂJA
ꢂJC
the user's board design.
a.50°C/W when mounted on
b. 120°C/W when mounted on a
minimum pad of 2 oz copper
2
a 1 in padof 2oz copper
2: Pulse Test: Pulse Width < 300ꢃs, Duty cycle < 2.0%.
www.fairchildsemi.com
3
FDMS9600S Rev.D2
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
60
50
40
30
20
10
0
V
= 10V
PULSE DURATION = 300ꢃs
GS
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
VGS = 3V
DUTY CYCLE = 2.0%MAX
V
= 3.5V
GS
VGS =3.5V
VGS = 4.5V
V
= 3V
GS
VGS = 4V
VGS = 6V
V
= 6V
GS
GS
VGS = 10V
V
= 4.5V
V
= 4V
GS
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
ID, DRAIN CURRENT(A)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
30
ID = 12A
VGS =10V
PULSE DURATION = 300ꢃs
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
D
= 6A
DUTY CYCLE = 2.0%MAX
25
20
15
10
5
T
J
= 125oC
T
J
= 25oC
0
-50 -25
0
25
50
75
100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F ig u re 3. No rmal i zed O n-Re si stan ce
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
60
60
10
PULSE DURATION = 300ꢃs
V
GS
= 0V
DUTY CYCLE = 2.0%MAX
50
40
30
20
10
0
V
DD
= 5V
T
J
= 125oC
1
0.1
T
J
= 25oC
T
J
=125oC
T
= 25oC
J
0.01
T
J
= -55oC
T
J
= -55oC
3.0
0.001
1.0
1.5
2.0
2.5
3.5
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
4
FDMS9600S Rev.D2
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
10
2000
1000
I
D
= 12A
C
iss
8
V
DD
=10V
6
C
oss
V
DD
= 15V
4
V
= 20V
DD
100
30
2
f = 1MHz
= 0V
C
rss
V
GS
0
30
0.1
1
10
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
100
300
100
VGS = 10V
SINGLE PULSE
= 120oC/W
= 25oC
R
ꢂJA
10
1
T
A
1ms
10ms
10
SINGLE PULSE
100ms
1s
T
= MAX RATE
J
RꢂJA = 120oC/W
T
= 25oC
0.1
A
10s
DC
THIS AREA IS LIMITED
BY rDS(ON)
1
0.01
0.5
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
100
1000
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure9. F o r w a r d B i a s S a f e
Operating Area
Figure10. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
ꢂJA
ꢂJA A
0.002
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Transient Thermal Response Curve
www.fairchildsemi.com
5
FDMS9600S Rev.D2
Typical Characteristics (Q2 SyncFET)
60
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 10V
GS
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
V
V
= 3.5V
= 4V
VGS =3V
GS
50
40
30
20
10
0
GS
V
= 4.5V
GS
V
= 6V
VGS = 3.5V
GS
VGS = 4.5V
VGS = 6V
V
= 3V
GS
VGS = 4V
PULSE DURATION = 300ꢃs
DUTY CYCLE = 2.0%MAX
VGS = 10V
50
0.0
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
60
V
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
DS
Figure 12.ꢀOn-Region Characteristics
Figure 13. Normalized on-Resistance v6 Drain
Current and Gate Voltage
1.8
14
ID = 16A
GS =10V
PULSE DURATION = 300ꢃs
I
= 8A
D
DUTY CYCLE = 2.0%MAX
V
1.6
1.4
1.2
1.0
0.8
0.6
12
10
8
T
J
= 125oC
6
4
T
= 25oC
4
J
2
-50 -25
0
25
50
75
100 125 150
2
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. On-Resistance vs Gate to
Source Voltage
Figure 14. Normalized On-Resistance
vs Junction Temperature
60
60
10
PULSE DURATION = 300ꢃs
V
= 0V
GS
DUTY CYCLE = 2.0%MAX
50
40
30
20
10
0
V
DD
= 5V
T = 125oC
J
1
0.1
=125oC
T
J
= 25oC
T
J
T
= 25oC
J
0.01
0.001
T
J
= -55oC
T
= -55oC
J
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. Transfer Characteristics
Figure 17. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
6
FDMS9600S Rev.D2
Typical Characteristics
10
5000
1000
I
D
= 16A
C
iss
V
=10V
8
6
4
2
0
DD
C
oss
V
= 15V
DD
V
DD
= 20V
f = 1MHz
= 0V
C
rss
V
GS
100
30
0.1
1
10
0
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 19. Capacitance vs Drain
to Source Voltage
Figure 18. Gate Charge Characteristics
www.fairchildsemi.com
7
FDMS9600S Rev.D2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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