NSS12100M3T5G [ONSEMI]
12 V, 1 A, Low VCE(sat) PNP Transistor; 12 V ， 1 A，低VCE （ sat）的PNP晶体管
| 型号： | NSS12100M3T5G |
| 厂家： | 
ONSEMI |
| 描述： | 12 V, 1 A, Low VCE(sat) PNP Transistor |
| 文件： | 总5页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS12100M3T5G
12 V, 1 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor's e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
CE(sat)
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12 VOLTS, 1.0 AMPS
Typical application are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 350 mW
COLLECTOR
3
2
1
BASE
2
Features
EMITTER
•ꢀHigh Continuous Current Capability (1 A)
•ꢀLow V
(150 mV Typical @ 500 mA)
MARKING
DIAGRAM
CE(sat)
•ꢀSmall Size 1.2 mm x 1.2 mm
•ꢀThis is a Pb-Free Device
Benefits
3
SOT-723
CASE 631AA
STYLE 1
VE M
2
1
•ꢀHigh Specific Current and Power Capability Reduces Required PCB Area
•ꢀReduced Parasitic Losses Increases Battery Life
VE = Specific Device Code
= Date Code
M
MAXIMUM RATINGS (T = 25°C)
A
ORDERING INFORMATION
Rating
Symbol
Max
-12
-12
-5.0
Unit
Vdc
Vdc
Vdc
Adc
†
Device
NSS12100M3T5G
Package
Shipping
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
V
CEO
V
CBO
V
EBO
SOT-723
(Pb-Free)
8000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Collector Current - Continuous
Collector Current - Peak
I
C
-1.0
-3.0
I
CM
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©ꢀ Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 0
1
Publication Order Number:
NSS12100M3/D
NSS12100M3T5G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T = 25°C
Derate above 25°C
P
(Note 1)
460
mW
D
A
3.7
mW/°C
°C/W
Thermal Resistance,
Junction-to-Ambient
R
(Note 1)
270
q
JA
Total Device Dissipation
T = 25°C
Derate above 25°C
P
(Note 2)
625
mW
D
A
5.0
mW/°C
°C/W
Thermal Resistance,
Junction-to-Ambient
R
(Note 2)
200
q
JA
Thermal Resistance,
Junction-to-Lead 3
R
105
°C/W
°C
q
JL
Junction and Storage
Temperature Range
T , T
J
-55 to +150
stg
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collectorā-āEmitter Breakdown Voltage, (I = -10 mAdc, I = 0)
B
V
-12
-12
-5.0
-
-
-
-
-
Vdc
Vdc
C
(BR)CEO
(BR)CBO
(BR)EBO
Collectorā-āBase Breakdown Voltage, (I = -0.1 mAdc, I = 0)
E
V
V
C
Emitterā-āBase Breakdown Voltage, (I = -0.1 mAdc, I = 0)
C
-
-
Vdc
E
Collector Cutoff Current, (V = -12 Vdc, I = 0)
CB E
I
CBO
-0.01
-0.01
-0.1
-0.1
mAdc
mAdc
Emitter Cutoff Current, (V
ON CHARACTERISTICS
DC Current Gain (Note 3)
= -5.0 Vdc, I = 0)
E
I
EBO
-
CES
h
FE
(I = -10 mA, V = -2.0 V)
200
120
80
-
-
-
-
-
-
C
CE
(I = -500 mA, V = -2.0 V)
C
CE
(I = -1.0 A, V = -2.0 V)
C
CE
Collectorā-āEmitter Saturation Voltage (Note 3)
(I = -0.05 A, I = -0.005 A) (Note 4)
(I = -0.1 A, I = -0.002 A)
V
V
CE(sat)
-
-
-
-
-
-0.030 -0.035
-0.060 -0.080
-0.040 -0.060
-0.155 -0.220
-0.350 -0.410
C
B
C
B
(I = -0.1 A, I = -0.010 A)
C
B
(I = -0.5 A, I = -0.050 A)
C
B
(I = -1.0 A, I = -0.100 A)
C
B
Baseā-āEmitter Saturation Voltage (Note 3)
(I = -1.0 A, I = -0.01 A)
V
V
V
BE(sat)
-
-
0.95
-1.15
-1.15
C
B
Baseā-āEmitter Turn-on Voltage (Note 3)
(I = -2.0 A, V = -2.0 V)
V
BE(on)
-1.05
C
CE
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance (V = -0.5 V, f = 1.0 MHz)
Cibo
Cobo
NF
-
-
-
40
15
-
50
20
pF
pF
dB
EB
Output Capacitance (V = -3.0 V, f = 1.0 MHz)
CB
Noise Figure (I = 0.2 mA, V = 5.0 V, R = 1.0 kW, f = 1.0 MHz, BW = 200 Hz)
S
5.0
C
CE
2
1. FR-ā4 @ 100 mm , 1 oz copper traces.
2
2. FR-ā4 @ 500 mm , 1 oz copper traces.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
4. Guaranteed by design but not tested.
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2
NSS12100M3T5G
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2.0
V
= -55°C
I /I = 100
C B
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
CE(sat)
I /I = 10
C B
V
= 150°C
CE(sat)
25°C
25°C
150°C
-55°C
0.05
0
0.2
0
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. Collector Emitter Saturation Voltage vs.
Collector Current
1.4
1.2
1.0
0.8
0.6
0.4
600
500
400
I /I = 10
B
C
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
V
= -55°C
BE(sat)
300 25°C (2.0 V)
25°C
-55°C (5.0 V)
200
150°C
-55°C (2.0 V)
100
0.2
0
0
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.0
0.8
0.6
0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I /I = 100
B
C
V
= -55°C
BE(on)
V
= -55°C
BE(sat)
25°C
25°C
150°C
150°C
0.2
0
0.1
0
V
CE
= -3.0 V
0.00001
0.0001
0.001
0.01
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
Figure 6. Base Emitter Turn-On Voltage vs.
Collector Current
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3
NSS12100M3T5G
50
45
3.0
2.5
2.0
1.5
100 mA 300 mA
I
C
= 500 mA
C
40
35
30
25
20
15
10
ibo(pF)
1.0
0.5
0
10 mA
0.01
5
0
0.1
1
10
100
0
1
2
3
4
5
6
V
EB
, EMITTER BASE VOLTAGE (V)
I , BASE CURRENT (mA)
B
Figure 7. Saturation Region @ 255C
Figure 8. Input Capacitance
25
10
1
20
15
10
1.0 ms
C
obo(pF)
10 ms
100 ms
1.0 s
0.1
5
0
Power Limit
Package Limit
0.01
0.1
1
100
10
0
1
2
3
4
5
6
7
8
9
10
V
CB
, COLLECTOR BASE VOLTAGE (V)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Safe Operating Area
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4
NSS12100M3T5G
PACKAGE DIMENSIONS
SOT-723
CASE 631AA-01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
-X-
E
D
A
b1
-Y-
3
HE
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
L
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
MAX
0.55
0.27 0.0059 0.0083 0.0106
0.37 0.010 0.012 0.015
0.17 0.0028 0.0047 0.0067
MIN
A
b
b1
C
D
E
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032) X Y
1.20
0.80
1.25
0.85
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
e
0.40 BSC
1.20
0.20
H E
L
1.15
0.15
1.25 0.045 0.047 0.049
0.25 0.0059 0.0079 0.0098
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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NSS12100M3/D
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