NSVMMBT5401WT1G [ONSEMI]
高电压 PNP 双极晶体管;
| 型号： | NSVMMBT5401WT1G |
| 厂家： | 
ONSEMI |
| 描述： | 高电压 PNP 双极晶体管 光电二极管 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5401WT1G
High Voltage Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−150
−160
−5.0
Unit
Vdc
1
BASE
V
CEO
V
CBO
V
EBO
Vdc
2
Vdc
EMITTER
Collector Current − Continuous
I
C
−500
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SC−70 (SOT−323)
CASE 419
THERMAL CHARACTERISTICS
STYLE 3
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
400
mW
D
FR−5 Board (Note 2)
MARKING DIAGRAM
T = 25°C
A
Derate Above 25°C
3.2
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
312
q
JA
4W MG
G
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
1
2
1. FR−5 @ 100 mm , 0.5 oz. copper traces, still air.
2. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
4W
M
= Specific Device Code
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Shipping
Package
MMBT5401WT1G
3000 / Tape & Reel
SC−70
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
August, 2012 − Rev. 1
MMBT5401W/D
MMBT5401WT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −1.0 mAdc, I = 0)
−150
−160
−5.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
E
C
Collector−Base Cutoff Current
(V = −120 Vdc, I = 0)
I
CBO
−
−
−50
−50
nAdc
mAdc
CB
E
(V = −120 Vdc, I = 0, T = 100°C)
CB
E
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −1.0 mAdc, V = −5.0 Vdc)
50
60
50
−
240
−
C
CE
(I = −10 mAdc, V = −5.0 Vdc)
C
CE
(I = −50 mAdc, V = −5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.2
−0.5
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
BE(sat)
−
−
−1.0
−1.0
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
MHz
pF
−
T
(I = −10 mAdc, V = −10 Vdc, f = 100 MHz)
100
−
300
6.0
200
8.0
C
CE
Output Capacitance
C
obo
(V = −10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Small Signal Current Gain
h
fe
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
40
−
C
CE
Noise Figure
NF
dB
(I = −200 mAdc, V = −5.0 Vdc, R = 10 W, f = 1.0 kHz)
C
CE
S
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2
MMBT5401WT1G
1000
100
10
V
CE
= 5 V
T = 150°C
J
T = 25°C
J
T = −55°C
J
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
3
10
V
= 30 V
CE
2
1
0
10
I
C
= I
CES
10
10
T = 125°C
J
75°C
-1
10
10
REVERSE
25°C
FORWARD
-2
-3
10
0.3 0.2 0.1
0
0.1 0.2 0.3 0.4
0.5 0.6 0.7
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut−Off Region
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3
MMBT5401WT1G
0.20
0.18
0.15
0.13
0.10
0.08
0.05
1.0
I /I = 10
C
B
−55°C
25°C
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
150°C
150°C
25°C
−55°C
0.03
0
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
1.1
2.5
2.0
T = -55°C to 135°C
J
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
= 10 V
CE
1.5
1.0
0.5
−55°C
25°C
q
q
for V
CE(sat)
VC
0
-0.5
-1.0
-1.5
150°C
for V
VB
BE(sat)
0.3
0.2
-2.0
-2.5
0.0001
0.001
0.01
0.1
0.1 0.2
1.0 2.0 3.0 5.0
I , COLLECTOR CURRENT (mA)
0.3 0.5
10
20 30 50 100
C
I , COLLECTOR CURRENT (A)
C
Figure 6. Base Emitter Voltage vs. Collector
Current
Figure 7. Temperature Coefficients
100
70
T = 25°C
J
50
V
BB
V
CC
+ꢂ8.8 V
-30 V
30
20
10.2 V
C
ibo
100
3.0 k
R
C
V
in
10
7.0
5.0
V
out
0.25 mF
10 ms
R
B
INPUT PULSE
C
obo
5.1 k
100
3.0
2.0
t , t ≤ 10 ns
1N914
V
r
f
DUTY CYCLE = 1.0%
in
1.0
0.2
Values Shown are for I @ 10 mA
1.0
2.0 3.0
5.0 7.0
0.3
0.5 0.7
10
20
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 8. Switching Time Test Circuit
Figure 9. Capacitances
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4
MMBT5401WT1G
1000
700
2000
I /I = 10
C B
t @ V = 120 V
r CC
1000
T = 25°C
J
500
I /I = 10
C B
t @ V = 120 V
f CC
700
500
T = 25°C
J
300
200
t @ V = 30 V
r CC
t @ V = 30 V
CC
f
300
200
100
70
t @ V = 120 V
s CC
100
70
50
30
20
50
t @ V
d
= 1.0 V
BE(off)
= 120 V
V
CC
30
20
10
0.2
1.0 2.0 3.0 5.0
0.2
1.0 2.0 3.0 5.0
0.3 0.5
10 20 30 50
100 200
0.3 0.5
10
20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. Turn−On Time
Figure 11. Turn−Off Time
1000
100
10
1
V
= 1 V
CE
T = 25°C
A
10 mSec
0.1
1 Sec
0.01
0.001
0.1
1
10
100
1
10
100
1000
I , COLLECTOR CURRENT (A)
C
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current Gain Bandwidth Product
Figure 13. Safe Operating Area
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5
MMBT5401WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT5401W/D
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