NSVMSA1162GT1G [ONSEMI]
PNP 双极晶体管;
| 型号： | NSVMSA1162GT1G |
| 厂家： | 
ONSEMI |
| 描述： | PNP 双极晶体管 放大器 光电二极管 小信号双极晶体管 |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSA1162GT1, MSA1162YT1
General Purpose Amplifier
Transistors
PNP Surface Mount
http://onsemi.com
Features
• Moisture Sensitivity Level: 1
• ESD Rating: TBD
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Value
60
Unit
Vdc
2
1
Collector−Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
BASE
EMITTER
Collector−Emitter Voltage
Emitter−Base Voltage
V
V
50
Vdc
7.0
Vdc
3
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
I
100
200
mAdc
mAdc
C
2
I
1
C(P)
SC−59
Characteristic
Power Dissipation
Symbol
Max
200
Unit
mW
°C
CASE 318D
STYLE 1
P
D
Junction Temperature
Storage Temperature
T
150
J
MARKING DIAGRAM
T
stg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
62x M G
G
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
62x = Device Code
x = G or Y
Characteristic
Symbol
Min
Max
Unit
M
G
= Date Code*
= Pb−Free Package
Collector−Emitter Breakdown Voltage
(I = 2.0 mAdc, I = 0)
V
50
−
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
C
B
(Note: Microdot may be in either location)
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
60
7.0
−
−
−
Vdc
Vdc
*Date Code orientation may vary depending
upon manufacturing location.
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
E
C
ORDERING INFORMATION
Collector−Base Cutoff Current
(V = 45 Vdc, I = 0)
I
I
0.1
mAdc
CBO
CEO
†
Device*
Package
Shipping
CB
E
Collector−Emitter Cutoff Current
(V = 10 Vdc, I = 0)
MSA1162GT1
MSA1162GT1G
SC−59
3000/Tape & Reel
3000/Tape & Reel
−
−
−
0.1
2.0
1.0
mAdc
mAdc
mAdc
CE
B
(V = 30 Vdc, I = 0)
SC−59
(Pb−Free)
CE
B
(V = 30 Vdc, I = 0, T = 80°C)
CE
B
A
DC Current Gain (Note 1)
(V = 6.0 Vdc, I = 2.0 mAdc)
h
FE
−
MSA1162YT1
SC−59
3000/Tape & Reel
3000/Tape & Reel
CE
C
MSA1162YT1
MSA1162GT1
120
200
240
400
MSA1162YT1G
SC−59
(Pb−Free)
Collector−Emitter Saturation Voltage
(I = 100 mAdc, I = 10 mAdc)
V
−
0.5
Vdc
CE(sat)
*The “T1” suffix refers to a 7 inch reel.
C
B
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Current−Gain − Bandwidth Product
(I = 1 mA, V = 10.0 V, f = 10 MHz)
f
MHz
T
80
−
C
CE
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
1
©
Semiconductor Components Industries, LLC, 2006
Publication Order Number:
January, 2006 − Rev. 5
MSA1162GT1/D
MSA1162GT1, MSA1162YT1
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE G
NOTES:
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ANSI
D
Y14.5M, 1982.
ꢀꢁ2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
H
E
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
2
1
b
e
H
E
STYLE 1:
C
PIN 1. EMITTER
2. BASE
3. COLLECTOR
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
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P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MSA1162GT1/D
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