NVMFWS1D1N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 233A,1.05mohm;
| 型号： | NVMFWS1D1N04XMT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 40 V, 233A,1.05mohm |
| 文件： | 总7页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
40 V
1.05 mW @ 10 V
233 A
D (5)
40 V, 1.05 mW, 233 A
NVMFWS1D1N04XM
G (4)
Features
• Low R
to Minimize Conduction Losses
DS(on)
S (1,2,3)
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5 x 6 mm) with Compact Design
• AECQ101 Qualified and PPAP Capable
N−CHANNEL MOSFET
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
DFNW5 (SO−8FL)
CASE 507BA
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
1D1N4W
AYWZZ
V
DSS
Gate−to−Source Voltage
DC
V
GS
20
V
1D1N4W = Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
I
233
165
104
44
A
C
D
T
C
= Assembly Lot Code
Power Dissipation
T
C
P
W
A
D
Continuous Drain Current
R
T = 25°C
A
I
DA
q
JA
T = 100°C
A
31
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Pulsed Drain Current
T
C
= 25°C,
I
900
A
DM
t = 10 ms
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
Source Current (Body Diode)
Single Pulse Avalanche Energy
I
88
A
S
E
AS
395
mJ
(I = 14.3 A)
PK
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NNMFWS1D1N04XM/D
April, 2023 − Rev. 3
NVMFWS1D1N04XM
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction−to−Case (Note 2)
Symbol
Value
1.43
Unit
°C/W
R
q
JC
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)
R
39.8
q
JA
2
1. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25°C
40
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
I
D
= 1 mA. Referenced to 25°C
15
mV/°C
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
10
mA
DSS
J
V
= 40 V, T = 125°C
100
100
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 20 V, V = 0 V
nA
GSS
DS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 30 A, T = 25°C
0.9
1.05
3.5
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 120 mA, T = 25°C
2.5
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
DV
/
V
GS
= V , I = 120 mA
−7.25
mV/°C
GS(TH)
DS
D
DT
J
Forward Transconductance
g
FS
V
DS
= 5 V, I = 30 A
152
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3138
2015
29.4
49.3
9.2
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, V = 25 V, f = 1 MHz
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
V
GS
= 10 V, V = 32 V; I = 50 A
DD D
Q
14.2
9.4
GS
GD
Q
R
f = 1 MHz
0.7
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
t
21.2
6.7
ns
d(ON)
Resistive Load,
Rise Time
t
r
V
GS
I
= 0/10 V, V = 32 V,
D
DD
Turn−Off Delay Time
34.1
5.5
= 50 A, R = 0 W
d(OFF)
G
Fall Time
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 30 A, T = 25°C
0.8
0.66
94
1.2
V
SD
GS
S
J
V
GS
= 0 V, I = 30 A, T = 125°C
S J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
41
a
V
= 0 V, dI/dt = 100 A/ms,
GS
I
= 50 A, V = 32 V
S
DD
Discharge Time
53
b
Reverse Recovery Charge
Q
224
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFWS1D1N04XM
TYPICAL CHARACTERISTICS
600
500
400
300
200
100
0
600
VGS=4.5V
VDS=5V
T
J=25°C
VGS=5V
V
GS=5.5V
500
400
300
200
100
0
VGS=6V
VGS=7V
V
GS=8V
VGS=9V
=10V
V
GS
T
J=−55°C
T
J=25°C
T
J=175°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
8
7
6
5
4
3
2
1
0
3
T
J=25°C
=25°C
TJ
ID=30A
T
J=175°C
2.5
2
1.5
1
0.5
V
GS =10V
100 120 140 160 180 200
ID, Drain Current (A)
0
4
5
6
7
8
9
10
20
40
60
80
VGS, Gate to Source Voltage (V)
Figure 4. On−Resistance vs. Drain Current
Figure 3. On−Resistance vs. Gate Voltage
2
1.8
1.6
1.4
1.2
1
100000
10000
1000
100
I
D=30A
VGS=10V
10
TJ=25C
TJ=85C
TJ= 125C
TJ= 150C
TJ= 175C
1
0.8
0.1
0.6
5
10
15
20
25
30
35
40
−75 −50 −25
0
25
50
75 100 125 150 175
VDS , Drain to Source Voltage (V)
T
J, Junction Temperature (°C)
Figure 6. Drain Leakage Current vs. Drain Voltage
Figure 5. Normalized ON Resistance vs. Junction
Temperature
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3
NVMFWS1D1N04XM
TYPICAL CHARACTERISTICS (continued)
10000
1000
100
10
ID=50A
8
6
4
2
0
VGS=0V
T
J=25°C
f=1MHz
CISS
COSS
CRSS
VDD=8V
VDD=24V
VDD=32V
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
1000
100
10
1e−06
1e−07
1e−08
1e−09
VGS=0V
VGS=10V
VDS=32V
ID=50A
1
td(on)
td(off)
tr
0.1
0.01
T
J=175°C
T
J=25°C
tf
T
J=−55°C
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
R
G, Gate Resistance (W)
VSD , Body Diode Forward Voltage (V)
Figure 10. Diode Forward Characteristics
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
1000
100
10
=25°C
TC
Single Pulse
VGS ≤ 10 V
10
1
T
J=25°C
pulseDuration=0.5ms
pulseDuration=1ms
pulseDuration=10ms
T
J=150°C
1
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
VDS , Drain to Source Voltage (V)
tAV ,Time in Avalanche (sec)
Figure 12. Ipeak vs. Time in Avalanche (UIS)
Figure 11. Safe Operating Area (SOA)
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4
NVMFWS1D1N04XM
TYPICAL CHARACTERISTICS (continued)
100
10
1
50%Duty Cycle
20% Duty Cycle
10% Duty Cycle
5% Duty Cycle
2% Duty Cycle
1% Duty Cycle
Single Pulse
0.1
Z
Notes:
P
DM
T
=PDMxZθJA((t))++TT
JM
A
t
1
Duty Cycle,D=t1//tt2
t
2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS1D1N04XMT1G
1D1N4W
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFWS1D1N04XM
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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6
NVMFWS1D1N04XM
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