NVMFWS0D9N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 273 A, 0.90 mΩ;型号: | NVMFWS0D9N04XMT1G |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET 40 V, 273 A, 0.90 mΩ |
文件: | 总7页 (文件大小:151K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
0.9 mꢂ @ V = 10 V
273 A
GS
D
40 V, 0.9 mW, 273 A
NVMFWS0D9N04XM
G
Features
• Low R
to Minimize Conduction Losses
DS(on)
S
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5x6 mm) with Compact Design
• AEC−Q101 Qualified and PPAP Capable
N−CHANNEL MOSFET
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
DFNW5
(SO−8FL)
CASE 507BA
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
0D9N4W
AYWZZ
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
0D9N4W = Specific Device Code
Gate−to−Source Voltage
DC
V
GS
20
V
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
I
273
193
121
48
A
C
D
T
C
= Assembly Lot Code
Power Dissipation
T
C
P
W
A
D
Continuous Drain Current
R
T = 25°C
A
I
DA
ꢀ
JA
T = 100°C
A
34
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Pulsed Drain Current
T
= 25°C,
I
900
A
C
p
DM
t = 10 ꢁ s
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
Source Current (Body Diode)
I
100
390
260
A
S
Single Pulse Avalanche Energy (I = 17.7 A)
E
AS
mJ
°C
PK
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVMFWS0D9N04XM/D
April, 2023 − Rev. 0
NVMFWS0D9N04XM
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1.24
Unit
Thermal Resistance, Junction−to−Case (Note 2)
R
°C/W
ꢀ
JC
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)
R
39.5
ꢀ
JA
2
1. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25°C
40
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
ꢃ
V
/
I
D
= 1 mA, Referenced to 25°C
15
mV/°C
(BR)DSS
ꢃ
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
10
ꢁ
A
DSS
J
V
= 40 V, T = 125°C
100
100
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 20 V, V = 0 V
nA
GSS
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 30 A, T = 25°C
0.76
0.9
3.5
mꢂ
DS(on)
GS
D
J
V
V
GS
= V , I = 150 ꢁ A, T = 25°C
2.5
V
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
ꢃ
V
/
V
GS
= V , I = 150 ꢁ A
−7.25
mV/°C
GS(TH)
DS
D
ꢃ
T
J
Forward Trans−conductance
g
FS
V
DS
= 5 V, I = 30 A
160
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, V = 25 V, f = 1 MHz
3896
2500
35
pF
nC
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
V
GS
= 10 V, V = 32 V; I = 30 A
61.3
11.4
17.1
11.6
0.6
G(TOT)
DD
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
ꢂ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
Resistive Load,
23.4
7.3
38
ns
d(ON)
V
GS
I
= 0/10 V, V = 32 V,
D
DD
t
r
= 50 A, R = 0 ꢂ
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
6
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 30 A, T = 25°C
0.8
0.65
89
1.2
V
SD
GS
S
J
V
GS
= 0 V, I = 30 A, T = 125°C
S J
Reverse Recovery Time
Charge Time
t
V
GS
= 0 V, I = 50 A,
ns
RR
S
dI/dt = 100 A/ꢁ s, V = 32 V
DD
t
t
45
a
Discharge Time
44
b
Reverse Recovery Charge
Q
231
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFWS0D9N04XM
TYPICAL CHARACTERISTICS
700
600
500
400
300
200
100
0
700
VGS=4.5V
VGS=5V
VDS=5V
T
J=25°C
VGS=5.5V
600
500
400
300
200
100
0
VGS=6V
VGS=7V
VGS=8V
VGS=9V
VGS=10V
T
J=−55°C
T
J=25°C
T
J=175°C
0
0.5
1
1.5
2
2.5
3
3.5
4
2
3
4
5
6
7
VDS , Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
3
2
1
1
0.9
0.8
0.7
0.6
0.5
T
J=25°C
ID=30A
T
J=25°C
T
J=175°C
VGS=10V
0
4
5
6
7
8
9
10
0
50
100
150
200
250
300 350
400
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
2
1.8
1.6
1.4
1.2
1
1000000
I
D =30A
VGS=10V
100000
10000
1000
100
TJ=25C
TJ=85C
TJ= 125C
TJ= 150C
TJ= 175C
10
0.8
0.6
1
−75 −50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T
VDS, Drain to Source Voltage (V)
J, Junction Temperature (°C)
Figure 5. Normalized ON Resistance vs.
Junction Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFWS0D9N04XM
TYPICAL CHARACTERISTICS (Continued)
10000
1000
100
10
ID=30A
8
6
4
2
0
VGS=0V
T
J=25°C
f=1MHz
V
DD
VDD=32V
DD=8V
CISS
COSS
CRSS
V
=24V
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50 60
70
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1e−06
1e−07
1e−08
1e−09
1000
100
10
VGS=10V
VDS=32V
ID=50A
VGS=0V
1
td(on)
td(off)
tr
0.1
0.01
T
J=175°C
T
J=25°C
tf
T
J=−55°C
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
R
VSD, Body Diode Forward Voltage (V)
G, Gate Resistance (ꢂ )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Characteristics
100
1000
100
10
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
10
R
Limit
DS(on)
Thermal Limit
Package Limit
1
T
J(initial)=25°C
pulseDuration=0.5ms
pulseDuration=1ms
pulseDuration=10ms
T
J(initial) =150°C
1
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
VDS, Drain to Source Voltage (V)
tAV ,Time in Avalanche (sec)
Figure 11. Safe Operating Area (SOA)
Figure 12. Avalanche Current vs. Pulse Time
(UIS)
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4
NVMFWS0D9N04XM
TYPICAL CHARACTERISTICS (Continued)
100
10
D=0 is Single Pulse
@50% Duty Cycle
@20% Duty Cycle
@10% Duty Cycle
@5% Duty Cycle
@2% Duty Cycle
@1% Duty Cycle
Single Pulse
1
0.1
Notes:
= P
P
DM
T
x Z
(t) + T
ꢀ JA A
JM
DM
t
1
Duty Cycle, D = t /t
2
1
t
2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Time (sec)
Figure 13. Transient Thermal Response
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS0D9N04XMT1G
0D9N4W
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFWS0D9N04XM
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
ꢀ
ꢀ
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6
NVMFWS0D9N04XM
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