NVMFWS0D7N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 323 A, 0.70 mΩ;
| 型号： | NVMFWS0D7N04XMT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 40 V, 323 A, 0.70 mΩ |
| 文件： | 总7页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8-FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
0.7 mW
323 A
N−CHANNEL MOSFET
40 V, 0.7 mW, 323 A
D (5)
NVMFWS0D7N04XM
G (4)
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5 x 6 mm) with Compact Design
• AEC−Q101 Qualified and PPAP Capable
S (1,2,3)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
DFNW5 (SO−8FL)
CASE 507BA
MARKING DIAGRAM
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
S
S
S
G
D
D
0D7N4W
AYWZZ
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
D
Gate−to−Source Voltage
V
GS
20
V
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Continuous Drain Current
T
T
T
= 25°C
= 100°C
= 25°C
I
323
229
134
9.18
6.49
900
900
A
C
C
C
D
Power Dissipation
P
W
A
D
Continuous Drain Current
T = 25°C
A
I
DA
T = 100°C
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Pulsed Drain Current
T
C
= 25°C,
I
A
A
DM
t = 10 ms
p
Pulsed Source Current
(Body Diode)
I
SM
Operating Junction and Storage Temperature
Range
T , T
−55 to
175
°C
J
STG
Source Current (Body Diode)
I
202
987
260
A
S
Single Pulse Avalanche Energy (I = 21 A)
E
AS
mJ
°C
PK
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NVMFWS0D7N04XM/D
February, 2023 − Rev. 3
NVMFWS0D7N04XM
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1.11
Unit
Thermal Resistance, Junction−to−Case (Note 2)
R
°C/W
q
JC
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)
R
39.3
q
JA
2
1. Surface−mounted on FR4 board using 650 mm pad, 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
I
D
= 250 mA, Referenced to 25°C
14.9
mV/°C
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
1
mA
DSS
J
V
DS
= 40 V, T = 125°C
40
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 20 V, V = 0 V
100
nA
GSS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 50 A
0.59
3.0
0.7
3.5
mW
V
DS(on)
GS
D
V
V
GS
V
GS
= V , I = 180 mA
2.5
GS(TH)
DS
D
Gate Threshold Voltage Temperature
Coefficient
DV
/
= V , I = 180 mA
−7.2
mV/°C
GS(TH)
DS
D
DT
J
Forward Trans−conductance
g
FS
V
DS
= 5 V, I = 50 A
244
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, V = 25 V, f = 1 MHz
4595
2980
41.8
71.6
13.5
20.6
13
pF
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
V
GS
= 10 V, V = 32 V; I = 50 A
nC
G(TOT)
DD
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
0.69
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
GS
I
= 0/10 V, V = 32 V,
7.33
5.39
11.1
4.48
ns
d(ON)
DD
= 50 A, R = 0 W
D
G
t
r
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SOURCE TO DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.81
0.66
94.4
55.6
38.8
269
1.2
V
SD
GS
J
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
V
= 32 V, I = 50 A,
ns
RR
DD
F
dI/dt = 100 A/ms
t
t
a
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFWS0D7N04XM
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
100
0
800
VGS=4.5V
T
J=25°C
V
DS=5V
VGS=5V
700
600
500
400
300
200
100
0
V
GS=5.5V
GS=6V
GS=7V
GS=8V
GS=9V
VGS=10V
V
V
V
V
T
J=−55°C
T
J=25°C
T
J=175°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
VDS, Drain to Source Voltage(V)
VGS, Gate to Source Voltage(V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
0.7
0.68
0.66
0.64
0.62
0.6
T
J=25°C
ID=50A
T
J=25°C
T
J=175°C
7
6
5
4
3
2
1
0
0.58
0.56
0.54
0.52
0.5
V
GS=10V
V
GS=12V
4
5
6
7
8
9
10
0
100
200
300
400
500
600
VGS, Gate to Source Voltage(V)
ID, Drain Current(A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
1.0e−04
1.0e−05
1.0e−06
1.0e−07
1.0e−08
1.0e−09
1.0e−10
VGS=0V
2
ID=50A
1.8
1.6
1.4
1.2
1
T
°C
°C
°C
°C
°C
J=25
T
J=85
T
J=125
0.8
0.6
T
J=150
T
J=175
5
10
15
20
25
30
35
40
−75 −50 −25
0
25
50
75 100 125 150 175
T
J, Junction Temperature(°C)
VDS,Drain to Source Voltage(V)
Figure 5. Normalized ON Resistance vs.
Junction Temperature
Figure 6. Drain Leakage vs. Drain−to−Source
Voltage
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3
=25
_C
NVMFWS0D7N04XM
TYPICAL CHARACTERISTICS
10000
1000
100
10
ID=50A
VGS=0V
8
6
4
2
0
T
J=25°C
f=1MHz
V
DD
VDD=32V
DD=8V
CISS
COSS
CRSS
V
=24V
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60 70
80
VDS, Drain to Source Voltage(V)
QG, Gate Charge(nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1e−06
1e−07
1e−08
1e−09
1000
100
10
VGS=10V
VDS=32V
ID=50A
VGS=0V
1
td(on)
td(off)
tr
0.1
0.01
T
J=175°C
T
J=25°C
tf
T
J=−55°C
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
RG,Gate Resistance(Ohm)
VSD , Body Diode Forward Voltage(V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Characteristics
100
T
C=25_C
T
TJ
T
=175_C
SJingle Pulse
J=100_C
1000
100
10
Ron limit
Package limit
1
BV limit
pulseDuration=0.5ms
pulseDuration=1ms
pulseDuration=10ms
10
1e−05
0.1
1e−04
1e−03
1e−02
0.1
1
10
tAV,TIME IN AVALANCHE(s)
V
,Drain to Source Voltage(V)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Ipeak vs. Time in Avalanche
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4
NVMFWS0D7N04XM
TYPICAL CHARACTERISTICS
1.2
1.1
1
0.9
0.8
0.7
0.6
−75 −50 −25
0
25
50
75
100 125 150 175
TJ, Junction Temperature(°C)
Figure 13. Gate Threshold Voltage vs. Junction Temperature
100
10
D=0 is Single Pulse
1
0.1
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
P
0.01
DM
T
= P
x Z
(t) + T
qJA A
JM
DM
t
1
Duty Cycle, D = t /t
2
1
t
2
0.001
1e−06
1e−05
1e−04
1e−03
1e−02
1e−01
1e+00
1e+01
1e+02
1e+03
t, Rectangular Pulse Duration (s)
Figure 14. Thermal Response
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS0D7N04XMT1G
0D7N4W
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
DATE 03 FEB 2021
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26450H
DFNW5 5x6 (FULL−CUT SO8FL WF)
PAGE 1 OF 1
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