ES6U3 [ROHM]

4V Drive Nch+SBD MOSFET; 4V驱动N沟道+ SBD MOSFET


型号：	ES6U3
厂家：	ROHM
描述：	4V Drive Nch+SBD MOSFET 4V驱动N沟道+ SBD MOSFET 驱动
文件：	总5页 (文件大小：204K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

4V Drive Nch+SBD MOSFET

ES6U3

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET /

Schottky barrier diode

WEMT6

(6) (5) (4)

zFeatures

1) Nch MOSFET and schottky barrier diode

are put in WEMT6 package.

(1) (2) (3)

2) High-speed switching, Low On-resistance.

3) Built-in Low V^Fschottky barrier diode.

Abbriviated symbol : U03

zApplications

zInner circuit

Switching

(6)

(4)

(5)

zPackage specifications

∗2

Package

Taping

T2R

Type

Code

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

Basic ordering unit (pieces)

8000

∗1

ES6U3

(1)

(2)

(3)

∗1 ESD protection diode

∗2 Body diode

(6)Drain

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

1.4

2.8

0.5

2.8

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

I_SP

Channel temperature

Power dissipation

Tch

P_D

150

0.7

°C

∗2

W / ELEMENT

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

<Di>

Parameter

Symbol

V_RM

V_R

Limits

Unit

Repetitive peak reverse voltage

Reverse voltage

0.5

2.0

I_F

Forward current

∗1

I_FSM

Forward current surge peak

Junction temperature

Power dissipation

°C

P_D

150

0.5

∗2

W / ELEMENT

∗1 60Hz 1cyc.

∗2 Mounted on a ceramic board

Parameter

Symbol

Limits

0.8

Unit

W / TOTAL

°C

∗

Power dissipation

P_D

Range of storage temperature

∗ Mounted on a ceramic board

Tstg

−55 to +150

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2009.03 - Rev.A

1/4

ES6U3

Data Sheet

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

µA V_GS= 20V, V_DS=0V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}30

µA

I_D= 1mA, V_GS=0V

Zero gate voltage drain current

Gate threshold voltage

I_DSS

−

1.0

−

V_DS= 30V, V_GS=0V

_DS= 10V, I_D= 1mA

V_{GS (th)}

2.5

240

350

380

−

170

250

270

−

mΩ I_D= 1.4A, V_GS= 10V

mΩ I_D= 1.4A, V_GS= 4.5V

mΩ I_D= 1.4A, V_GS= 4V

Static drain-source on-state

resistance

∗

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

V_DS= 10V, I_D= 1.4A

−

V_DS= 10V

C_oss

C_rss

t_{d (on)}

V_GS=0V

f=1MHz

∗

DD 15V

= 0.7A

GS= 10V

Turn-off delay time

Fall time

t_{d (off)}

21Ω

∗

t_f

= 10Ω

Total gate charge

Gate-source charge

Q_g

1.4

0.6

0.3

V_DD15V, V_GS= 5V

I_D= 1.4A, R_L11Ω

R_G= 10Ω

∗

Q_gs

Q_gd

−

Gate-drain charge

∗Pulsed

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

∗

Forward voltage

−

1.2

I_S= 1.4A, V_GS=0V

∗Pulsed

<Di>

Parameter

Symbol Min. Typ. Max.

Conditions

I_F= 0.1A

Unit

−

0.36

0.52

100

Forward voltage

Reverse current

I_F= 0.5A

µA

V = 20V

www.rohm.com

2009.03 - Rev.A

2/4

ES6U3

Data Sheet

zElectrical characteristics curves

< MOSFET >

1000

100

Ta=25°C

V_DD=15V

V_GS=10V

R_G=10Ω

Pulsed

Ta=25°C

V_DD=15V

I_D=1.4A

R_G=10Ω

Pulsed

f=1MHz

V_GS=0V

100

Ciss

d (off)

Coss

d (on)

Crss

0.01

0.1

100

0.01

0.1

DRAIN-SOURCE VOLTAGE : V_DS(V)

DRAIN CURRENT : I_D(A)

TOTAL GATE CHARGE : Qg (nC)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Fig.2 Switching Characteristics

Fig.3 Dynamic Input Characteristics

1000

Ta=25°C

V_GS=0V

Pulsed

V_DS=10V

900

Pulsed

800

Ta=125°C

700

600

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=75°C

Ta=25°C

Ta= −25°C

ID=1.4A

0.1

500

400

300

ID=0.7A

0.1

0.01

200

100

0.01

0.0

⁰0

0.5

1.0

1.5

0.001

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

GATE SOURCE VOLTAGE : V^GS(V)

SOURCE-DRAIN VOLTAGE : V_SD(V)

GATE-SOURCE VOLTAGE : V^GS(V)

Fig.5 Static Drain-Source

On-State Resistance

Fig.6 Source Current vs.

Source-Drain Voltage

Fig.4 Typical Transfer Characteristics

vs. Gate-Source Voltage

10000

V_GS=10V

Pulsed

V_GS=4.5V

Pulsed

V_GS=4V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

1000

100

1000

100

1000

100

0.01

0.1

0.01

0.1

0.01

0.1

DRAIN CURRENT : I_D(A)

Fig.7 Static Drain-Source

Fig.8 Static Drain-Source

Fig.9 Static Drain-Source

On-State Resistance vs.

Drain Current ( Ι )

Drain Current ( ΙΙ )

Drain Current ( ΙΙΙ )

1000

Ta=25°C

Pulsed

GS=4V

GS=4.5V

GS=10V

100

0.1

DRAIN CURRENT : I_D(A)

Fig.10 Static Drain-Source

On-State Resistance vs.

Drain Current ( Ι

)

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2009.03 - Rev.A

3/4

ES6U3

Data Sheet

< Di >

100000

10000

1000

100

0.1

pulsed

Ta = 75

℃

Ta = 25

℃

Ta = 75

℃

Ta = 25

℃

Ta= - 25

℃

Ta= - 25

℃

0.01

0.001

0.1

0.01

REVERSE VOLTAGE : V_R[V]

Fig.1 Reverse Current vs. Reverse Voltage

0.1

FORWARD VOLTAGE : V_F[V]

Fig.2 Forward Current vs. Forward Voltage

0.2

0.3

0.4

0.5

0.6

zMeasurement circuit

Pulse Width

90%

VDS

50%

10%

50%

VGS

VDS

D.U.T.

10%

90%

10%

VDD

90%

d(on)

td(off)

toff

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

VDS

D.U.T.

G(Const.)

Qgd

VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit

FIg.2-2 Gate Charge Waveform

zNotice

1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and

increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.

This built-in SBD has low V^Fcharacteristics and therefore, higher leak current. Please consider enough the surrounding

temperature, generating heat of MOSFET and the reverse current.

2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD

protection circuit.

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2009.03 - Rev.A

4/4

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

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The Products speciﬁed in this document are intended to be used with general-use electronic

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While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

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The Products are not designed or manufactured to be used with any equipment, device or

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R0039

ES6U3 [ROHM]

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