SMG2314NE [SECOS]
N-Channel Enhancement Mode Mos.FET; N沟道增强模式Mos.FET
| 型号： | SMG2314NE |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Mos.FET |
| 文件： | 总2页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2314NE
4 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize High Cell
Density process. Low RDS(on) assures minimal power loss and
conserves energy, making this device ideal for use in power
management circuitry. Typical applications are PWMDC-DC
converters, power management in portable and battery-powered
products such as computers, printers, battery charger,
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
telecommunication power system, and telephones power system.
D
FEATURES
H
J
G
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount package saves
board space.
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
High power and current handling capability.
MLow side high current DC-DC Converter applications
REF.
REF.
Min.
Max.
3.10
3.00
1.70
1.40
A
B
C
D
2.70
2.25
1.30
1.00
G
H
J
0.10
0.45
0.20
0.55
K
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
PACKAGE INFORMATION
Package
MPQ
3K
LeaderSize
SC-59
7’ inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Ratings
Maximum
20
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
V
±12
ID @ TA=25°C
ID @ TA=70°C
4.0
3.1
±20
1.6
A
Continuous Drain Current 1
ID
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
IDM
IS
A
A
PD @ TA=25°C
PD @ TA=70°C
1.3
0.8
-55 ~ 150
W
W
°C
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
THERMAL RESISTANCE RATINGS
Symbol
Parameter
Maximum
Unit
t ≦ 5 sec
RJA
100
166
Maximum Junction to Ambient 1
°C / W
Steady State
Notes
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2011 Rev. A
Page 1 of 2
SMG2314NE
4 A, 20 V, RDS(ON) 32 m
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Symbol Min. Typ. Max. Unit
Test Conditions
VGS(th)
IGSS
0.7
-
-
±100
1
V
VDS=VGS, ID= 250uA
-
-
-
nA VDS= 0V, VGS= ±8V
-
VDS= 16V, VGS= 0V
uA
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
-
-
10
-
VDS= 16V, VGS= 0V, TJ= 55°C
ID(on)
10
-
-
-
A
VDS = 5V, VGS= 4.5V
VGS= 4.5V, ID= 4.6A
VGS= 2.5V, ID= 3.9A
VDS= 10V, ID= 4.0A
IS= 1.6A, VGS= 0V
32
44
-
Drain-Source On-Resistance 1
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gfs
-
11.3
0.75
S
V
VSD
-
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
13.4
0.9
2.0
8
-
-
-
-
-
-
-
VDS= 10V, VGS= 4.5V,
ID= 4.0A
nC
24
VDD= 10V, VGEN= 4.5V,
RL= 15, ID= 1A
Turn-off Delay Time
Fall Time
Td(off)
Tf
35
nS
10
Source-Ddrain Reverse
Recovery Time
Trr
-
40
-
IF=1.6A, di/dt =100 A/uS
Notes
1
2
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Jan-2011 Rev. A
Page 2 of 2
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