STPS80150CW [STMICROELECTRONICS]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | STPS80150CW |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
STPS80150CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
A1
A2
IF(AV)
VRRM
2 x 40 A
150 V
K
Tj (max)
VF (max)
175°C
0.74 V
FEATURES AND BENEFITS
A2
■
■
■
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
K
A1
TO-247
■
■
LOW THERMAL RESISTANCE
HIGH FREQUENCY OPERATION
DESCRIPTION
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, this devices is intended for
use to enhance the reliability of the application.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
Value
150
80
Unit
V
IF(RMS)
IF(AV)
A
RMS forward current
40
80
A
Average forward current
Tc = 150°C Per diode
δ = 0.5 Per device
IFSM
PARM
Tstg
500
38200
A
W
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
tp = 10 ms Sinusoidal
tp = 1µs Tj = 25°C
- 65 to + 175
175
°C
Tj
°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dV/dt
10000
V/µs
dPtot
1
* :
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
October 2003 - Ed: 1A
1/4
STPS80150CW
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Per diode
Total
Coupling
0.7
0.5
0.3
°C/W
Junction to case
Rth(j-c)
°C/W
Junction to case
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
µA
mA
V
IR *
5
6
30
Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
20
VF *
0.8
0.68
0.9
0.8
0.84
0.74
0.96
0.86
Forward voltage drop Tj = 25°C
Tj = 125°C
IF = 40 A
IF = 40 A
IF = 80 A
IF = 80 A
Tj = 25°C
Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
2
P = 0.62 x I
+ 0.003 I
F (RMS)
F(AV)
Fig. 1: Conduction losses versus average current
(per diode).
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P
(W)
F(AV)
P
(t )
p
(1µs)
ARM
40
35
30
25
20
15
10
5
P
ARM
δ = 0.2
δ = 0.5
1
δ = 0.1
δ = 0.05
δ = 1
0.1
0.01
T
t (µs)
p
I
(A)
F(AV)
tp
=tp/T
0.001
δ
0
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
Fig. 3: Normalized avalanche power derating
versus junction temperature.
Fig. 4: Average forward current versus ambient
temperature (δ=0.5, per diode).
I
(A)
F(AV)
P
ARM
(t )
p
(25°C)
ARM
45
40
35
30
25
20
15
10
5
Rth(j-a)=Rth(j-c)
P
1.2
1
0.8
0.6
0.4
0.2
Rth(j-a)=15°C/W
T
T (°C)
j
T
(°C)
amb
0
tp
=tp/T
δ
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
2/6
STPS80150CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
I
(A)
Z
/R
M
th(j-c) th(j-c)
500
450
400
350
300
250
200
150
100
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
δ = 0.5
δ = 0.2
Tc=50°C
Tc=75°C
Tc=125°C
T
δ = 0.1
IM
Single pulse
t
δ=0.5
t(s)
tp
1.E+00
=tp/T
δ
t (s)
p
0
1.E-03
1.E-02
1.E-01
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
I (µA)
R
C(pF)
1.E+05
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+04
Tj=125°C
1.E+03
Tj=100°C
Tj=75°C
1.E+02
1000
Tj=50°C
1.E+01
Tj=25°C
1.E+00
V (V)
R
V (V)
R
1.E-01
100
10
30
50
70
90
110
130
150
1
10
100
1000
Fig. 9: Forward voltage drop versus forward
current (per diode).
I
(A)
FM
100.0
10.0
1.0
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
V
FM
(V)
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
3/4
STPS80150CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V
REF.
A
D
E
F
F1
F2
4.85
2.20
0.40
1.00
5.15 0.191
2.60 0.086
0.80 0.015
1.40 0.039
0.203
0.102
0.031
0.055
Dia.
V
A
H
3.00
2.00
0.118
0.078
F3 2.00
F4 3.00
G
2.40 0.078
3.40 0.118
0.094
0.133
L5
10.90
0.429
L
H
L
15.45
19.85
15.75 0.608
20.15 0.781
4.30 0.145
0.620
0.793
0.169
L2 L4
L1
L1 3.70
L2
L3 14.20
L4
L5
18.50
0.728
F2
F3
F1
14.80 0.559
3.00 0.078
3.65 0.139
0.582
0.118
0.143
D
34.60
5.50
1.362
0.216
V2
L3
F4
M
V
2.00
F(x3)
M
E
5°
60°
5°
60°
G
=
=
V2
Dia. 3.55
■
■
■
Cooling method : C
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Ordering type
Marking
Package
Weight
4.4g
Base qty Delivery mode
30 Tube
STPS80150CW
STPS80150CW
TO-247
■
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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