STPS80H100 [ETC]

HIGH VOLTAGE POWER SCHOTTKY RECTIFIERS ; 高压功率肖特基整流器\n


型号：	STPS80H100
厂家：	ETC
描述：	HIGH VOLTAGE POWER SCHOTTKY RECTIFIERS 高压功率肖特基整流器\n 高压高电压电源
文件：	总4页 (文件大小：121K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS80H100TV

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 x 40 A

100 V

Tj (max)

V_F(max)

150 °C

0.65 V

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGE CUR-

RENT AND FORWARD VOLTAGE DROP

AVALANCHE RATED

LOW INDUCTANCE PACKAGE

ISOTOP^TM

INSULATED PACKAGE :

Insulated voltage = 2500 V_(RMS)

Capacitance = 45 pF

DESCRIPTION

High voltage dual Schottky barrier rectifier

designed for high frequency telecom and

computer Switched Mode Power Supplies

and other power converters.

Packaged in ISOTOP, this device is intended for

use in medium voltage operation, and particu-

larly, in high frequency circuitries where low

switching losses and low noise are required.

ABSOLUTE RATINGS

Symbol

(limiting values, per diode)

Parameter

Value

100

Unit

V_RRM

Repetitive peak reverse voltage

I_F(RMS)RMS forward current

125

I_F(AV)

Average forward current

Tc = 120°C

Per diode

Per device

= 0.5

I_FSM

I_RRM

I_RSM

T_stg

Surge non repetitive forward current tp = 10 ms sinusoidal

700

Repetitive peak reverse current

tp = 2 s square F = 1kHz

Non repetitive peak reverse current tp = 100 s square

Storage temperature range

- 55 to +150

150

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

V/ s

dV/dt

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j−a)

July 1999 - Ed: 3A

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STPS80H100TV

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R_{th (j-c)}Junction to case

Per leg

Total

C/W

0.55

0.1

R_{th (c)}

Coupling

When the diodes 1 and 2 are used simultaneously :

∆

Tj(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)

STATIC ELECTRICAL CHARACTERISTICS

(per diode)

Symbol

Parameter

Tests Conditions

Min. Typ. Max.

Unit

I_R*

Reverse leakage current

Tj = 25 C

V_R= V_RRM

Tj = 125 C

V_F**

Forward voltage drop

Tj = 25 C

I_F= 40 A

0.78

0.65

0.89

0.74

= 40 A

= 80 A

0.61

0.7

Tj = 125 C

I_F

Tj = 25 C

Tj = 125 C

Pulse test : * tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.56 x I_F(AV)+ 0.0022 x I_{F (RMS)}

Fig. 1:

Fig. 2:

Average forward current versus ambient

Average forward power dissipation versus

average forward current (per diode).

temperature ( =0.5, per diode).

PF(av)(W)

IF(av)(A)

δ = 0.2

δ = 0.1

δ = 0.5

δ = 0.05

Rth(j-a)=Rth(j-c)

δ = 1

Rth(j-a)=5°C/W

=tp/T

IF(av) (A)

Tamb(°C)

100

125

150

10 15 20 25 30 35 40 45 50

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STPS80H100TV

Fig. 3:

Fig. 4:

Relative variation of thermal impedance

junction to case versus pulse duration (per diode).

Non repetitive surge peak forward current

versus overload duration (maximum values, per diode).

Zth(j-c)/Rth(j-c)

IM(A)

1.0

500

0.8

400

300

δ = 0.5

0.6

Tc=50°C

200

0.4

δ = 0.2

Tc=75°C

δ = 0.1

100

0.2

Tc=110°C

Single pulse

=tp/T

t(s)

tp(s)

1E-1

δ=0.5

0.0

1E-3

1E-2

1E-1

1E+0

1E-2

1E+0

5E+0

Fig. 5:

Fig. 6:

Reverse leakage current versus reverse

Junction capacitance versus reverse

voltage applied (typical values, per diode).

C(nF)

IR(µA)

5.0

1E+4

Tj=125°C

F=1MHz

Tj=25°C

1E+3

1E+2

1E+1

1.0

1E+0

Tj=25°C

VR(V)

1E-1

0.1

10 20 30 40 50 60 70 80 90 100

100

Fig. 7:

Forward voltage drop versus forward

current (maximum values, per diode).

IFM(A)

500

100

Tj=125°C

Tj=25°C

VFM(V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

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STPS80H100TV

PACKAGE MECHANICAL DATA

ISOTOP^TM

DIMENSIONS

Millimeters Inches

Min.

REF.

Min.

Max.

12.20

9.10

Max.

0.480

0.358

0.323

0.033

0.081

1.504

1.248

1.004

0.951

11.80

8.90

0.465

0.350

0.307

0.030

0.077

1.488

1.240

0.990

0.939

7.8

8.20

0.75

0.85

1.95

2.05

37.80

31.50

25.15

23.85

38.20

31.70

25.50

24.15

24.80 typ.

0.976 typ.

14.90

12.60

3.50

15.10

12.80

4.30

0.587

0.496

0.138

0.161

0.181

0.157

1.185

0.594

0.504

0.169

0.197

0.69

4.10

4.30

4.60

5.00

4.00

4.30

4.00

4.40

0.173

1.193

30.10

30.30

Cooling method: C

Recommended torque value: 1.3 N.m.

Maximum torque value: 1.5 N.m.

Ordering type

Marking

Package

Weight

27g

Base qty

Delivery mode

STPS80H100TV STPS80H100TV

Epoxy meets UL94,V0

ISOTOP

Tube

without screws

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-

proval of STMicroelectronics.

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STPS80H100 [ETC]

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