STPS80H100CY [STMICROELECTRONICS]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | STPS80H100CY |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS80H100CY
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
IF(AV)
VRRM
2 x 40 A
100 V
Tj (max)
VF (max)
175 °C
0.70 V
FEATURES AND BENEFITS
HIGH REVERSE VOLTAGE
A2
NEGLIGIBLESWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
K
A1
HIGH TEMPERATURE
LOW THERMAL RESISTANCE
Max247
DESCRIPTION
Dual center tap Schottky rectifier suited for
Switched Mode Power Supplies and high
frequencyDC to DC converters.
Packaged in Max247, this device is intended for
use in high frequency computer and telecom
converters.
ABSOLUTE RATINGS
Symbol
(limiting values, per diode)
Parameter
Value
100
50
Unit
V
VRRM
Repetitive peak reverse voltage
IF(RMS) RMS forward current
A
IF(AV)
IFSM
Average forward current
Tc = 155°C
δ = 0.5
Per diode
Per device
40
80
A
Surgenon repetitive forward
current
tp = 10 ms sinusoidal
400
A
µ
IRRM
Tstg
Tj
Repetitive peak reverse current
Storage temperature range
tp = 2 s square F = 1kHz
2
A
- 65 to + 175
175
°C
°
C
Maximum operatingjunction temperature*
Critical rate of rise of reverse voltage
dV/dt
10000
V/µs
dPtot
dTj
1
* :
<
thermal runawayconditionfor a diode on its own heatsink
Rth(
j−a)
November 1999 - Ed: 1B
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STPS80H100CY
THERMAL RESISTANCES
Symbol
Parameter
Value
0.7
Unit
°
Rth (j-c) Junction to case
Per diode
Total
C/W
0.5
Rth (c)
Coupling
0.3
When the diodes 1 and 2 are used simultaneously:
∆
Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max.
Unit
°
µ
A
IR *
Reverse leakage current
Tj = 25 C
VR =VRRM
20
Tj = 125°C
Tj = 25°C
Tj = 125°C
7
20
0.8
mA
V
VF **
Forward voltage drop
IF = 40 A
IF = 40 A
IF = 80 A
IF = 80 A
0.65
0.79
0.7
°
Tj = 25 C
0.94
0.84
Tj = 125°C
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.56 x IF(AV) + 0.0035 x IF
(RMS)
Fig. 1:
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5, per diode).
Average forward power dissipation versus
averageforward current (per diode).
PF(av)(W)
IF(av)(A)
35
50
δ = 0.5
45
30
Rth(j-a)=Rth(j-c)
δ = 0.2
40
35
30
25
δ = 1
δ = 0.1
25
δ = 0.05
20
15
10
Rth(j-a)=5°C/W
20
T
15
10
5
T
5
tp
=tp/T
IF(av) (A)
δ
tp
=tp/T
Tamb(°C)
75 100
δ
0
0
0
25
50
125
150
175
0
5
10 15 20 25 30 35 40 45 50
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STPS80H100CY
Fig. 3:
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse (per diode).
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Zth(j-c)/Rth(j-c)
IM(A)
1.0
500
400
0.8
Tc=50°C
δ = 0.5
Tc=75°C
300
0.6
δ = 0.2
0.4
200
δ = 0.1
Tc=110°C
T
IM
100
0.2
t
Single pulse
δ=0.5
t(s)
tp(s)
=tp/T
δ
tp
0
0.0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typicalvalues, per diode).
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(nF)
IR(µA)
1E+4
5.0
F=1MHz
Tj=25°C
Tj=125°C
1E+3
1E+2
1E+1
1.0
Tj=25°C
1E+0
VR(V)
VR(V)
1E-1
0.1
0
10 20 30 40 50 60 70 80 90 100
1
2
5
10
20
50
100
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
500
Tj=125°C
100
Tj=25°C
10
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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STPS80H100CY
PACKAGE MECHANICAL DATA
Max247
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
Max.
5.30
2.60
1.40
2.40
3.40
0.80
10.30
5.55
15.90
15.20
4.30
Max.
0.209
0.102
0.055
0.094
0.133
0.031
0.799
0.219
0.626
0.598
0.169
E
A
A
A1
b
0.185
0.087
0.038
0.079
0.118
0.016
0.776
0.211
0.602
0.559
0.146
b1
b2
c
D
D
L1
e
A1
E
b1
L
L
b2
L1
e
c
b
Delivery
mode
Orderingtype
Marking
Package
Weight
4.4g
Base qty
STPS80H100CY STPS80H100CY
Epoxymeets UL94,V0
Max247
30
Tube
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use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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