STPS80170C [STMICROELECTRONICS]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | STPS80170C |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总6页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS80170C
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
VRRM
Tj
2 x 40 A
170 V
A1
A2
K
175 °C
0.74 V
VF(max)
FEATURES AND BENEFITS
■
■
■
High junction temperature capability
Low leakage current
Good trade off between leakage current and
forward voltage drop
Low thermal resistance
High frequency operation
Avalanche specification
A2
K
A1
TO-247
STPS80170CW
■
■
■
Table 2: Order Code
Part Number
Marking
DESCRIPTION
STPS80170CW
STPS80170CW
Dual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-247, this device is intended for
use to enhance the reliability of the application.
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
Repetitive peak reverse voltage
Value
170
80
Unit
VRRM
V
A
IF(RMS)
RMS forward current
Per diode
Per device
tp = 10 ms sinusoidal
40
80
IF(AV)
Tc = 150 °C δ = 0.5
Average forward current
A
IFSM
PARM
Tstg
Tj
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
500
38200
A
W
tp = 1 µs Tj = 25 °C
-65 to + 175
175
°C
Maximum operating junction temperature *
°C
dV/dt Critical rate of rise of reverse voltage
10000
V/µs
dPtot
dTj
1
---------------
-------------------------
* :
<
thermal runaway condition for a diode on its own heatsink
Rth(j – a)
September 2005
REV. 1
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STPS80170C
Table 4: Thermal Parameters
Symbol
Parameter
Value
Unit
Per diode
Total
0.7
0.5
Rth(j-c)
Rth(c)
Junction to case
°C/W
Coupling
0.3
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R
th(j-c) th(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
Tj = 25 °C
Min.
Typ
Max.
Unit
80
µA
IR *
VR = VRRM
IF = 40 A
IF = 80 A
Reverse leakage current
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
20
80
mA
0.80
0.68
0.90
0.80
0.84
0.74
0.96
0.86
VF **
Forward voltage drop
V
Pulse test:
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.62 x I
+ 0.003 I
F (RMS)
F(AV)
2/6
STPS80170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
PF(AV)(W)
IF(AV)(A)
45
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
Rth(j-a)=Rth(j-c)
d=1
d=0.1
d=0.2
d=0.5
d=0.05
Rth(j-a)=15°C/W
T
T
tp
=tp/T
d
=tp/T
tp
d
IF(AV)(A)
25
Tamb(°C)
75 100
0
0
0
5
10
15
20
30
35
40
45
50
0
25
50
125
150
175
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
P
ARM
(t )
p
(25°C)
ARM
P
(t )
p
ARM
(1µs)
P
P
ARM
1.2
1
1
0.1
0.8
0.6
0.4
0.2
0
0.01
t (µs)
p
T (°C)
j
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
IM(A)
500
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
450
400
350
d=0.5
300
TC=50°C
250
200
d=0.2
d=0.1
TC=75°C
150
T
TC=125°C
100
I
M
Single pulse
t
50
0
tp
=Tp/T
d
t(s)
tP(s)
d
=0.5
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
3/6
STPS80170C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
10000
IR(µA)
1.E+06
F=1MHz
V
OSC=30mVRMS
Tj=25°C
1.E+05
Tj=150°C
1.E+04
Tj=125°C
Tj=100°C
1.E+03
1000
Tj=75°C
1.E+02
Tj=50°C
1.E+01
Tj=25°C
1.E+00
VR(V)
VR(V)
100
1.E-01
1
10
100
1000
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 9: Forward voltage drop versus forward
current (per diode, low level)
Figure 10: Forward voltage drop versus
forward current (per diode, high level)
IFM(A)
40
IFM(A)
1000
35
Tj=125°C
(Maximum values)
30
Tj=125°C
(Maximum values)
100
25
Tj=125°C
(Typical values)
20
Tj=25°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
15
10
5
10
VFM(V)
VFM(V)
0
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
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STPS80170C
Inches
Figure 11: TO-247 Package Mechanical Data
DIMENSIONS
Millimeters
REF.
V
Min. Typ. Max. Min. Typ. Max.
A
D
E
4.85
2.20
0.40
1.00
5.15 0.191
2.60 0.086
0.80 0.015
1.40 0.039
0.203
0.102
0.031
0.055
V
Dia
F
A
F1
F2
F3
F4
G
3.00
2.00
0.118
0.078
H
2.00
3.00
2.40 0.078
3.40 0.118
0.094
0.133
L5
10.90
0.429
L
H
L
L1
L2
15.45
19.85
3.70
15.75 0.608
20.15 0.781
4.30 0.145
0.620
0.793
0.169
L2
L4
F2
F3
L1
L3
F1
V2
F(x3)
18.50
0.728
L3 14.20
L4
L5
M
V
V2
14.80 0.559
3.00 0.078
3.65 0.139
0.582
0.118
0.143
D
F4
34.60
5.50
1.362
0.216
M
E
2.00
5°
60°
5°
60°
G
Dia. 3.55
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
Table 6: Ordering Information
Ordering type
Marking
Package
Weight
Base qty Delivery mode
30 Tube
STPS80170CW
STPS80170CW
TO-247
4.4 g
■
■
■
■
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 Nm.
Maximum torque value: 1.0 Nm.
Table 7: Revision History
Date
Revision
Description of Changes
16-Sep-2005
1
First issue.
5/6
STPS80170C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
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www.st.com
6/6
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