VNN7NV04 [STMICROELECTRONICS]
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET; “ OMNIFET II ” ：全AUTOPROTECTED功率MOSFET
| 型号： | VNN7NV04 |
| 厂家： | 
ST |
| 描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 文件： | 总29页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNN7NV04 / VNS7NV04
/ VND7NV04 / VND7NV04-1
®
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
R
I
V
clamp
2
DS(on)
lim
VNN7NV04
VNS7NV04
VND7NV04
3
2
60 mΩ
6 A
40 V
1
SO-8
SOT-223
VND7NV04-1
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
3
3
2
1
1
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
TO251 (IPAK)
TO252 (DPAK)
ORDER CODES
TUBE
PACKAGE
SOT-223
SO-8
T&R
VNN7NV04
VNS7NV04
VNN7NV0413TR
VNS7NV0413TR
VND7NV0413TR
-
ESD PROTECTION
TO-252 (DPAK) VND7NV04
TO-251 (IPAK) VND7NV04-1
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protects the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
DESCRIPTION
The VNN7NV04, VNS7NV04, VND7NV04
VND7NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
BLOCK DIAGRAM
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
Control
1
Linear
Current
Limiter
Over
Temperature
3
SOURCE
FC01000
February 2003
1/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
ABSOLUTE MAXIMUM RATING
Value
SO-8
Symbol
Parameter
Unit
SOT-223
DPAK/IPAK
V
Drain-source Voltage (V =0V)
Internally Clamped
Internally Clamped
+/-20
V
V
DS
IN
V
Input Voltage
IN
I
Input Current
mA
Ω
IN
R
Minimum Input Series Impedance
Drain Current
150
IN MIN
I
I
Internally Limited
-10.5
A
D
R
Reverse DC Output Current
Electrostatic Discharge (R=1.5KΩ, C=100pF)
A
V
4000
V
ESD1
Electrostatic Discharge on output pin only
(R=330Ω, C=150pF)
V
16500
V
W
ESD2
P
Total Dissipation at T =25°C
7
4.6
60
40
tot
c
Maximum Switching Energy (L=0.7mH;
E
40
mJ
MAX
MAX
R =0Ω; V =13.5V; T
=150ºC; I =9A)
L
bat
jstart
L
Maximum Switching Energy (L=0.6mH;
R =0Ω; V =13.5V; T =150ºC; I =9A)
E
37
mJ
L
bat
jstart
L
T
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally limited
Internally limited
-55 to 150
°C
°C
°C
j
T
c
T
stg
CONNECTION DIAGRAM (TOP VIEW)
1
DRAIN
DRAIN
SOURCE
8
SOURCE
SOURCE
INPUT
DRAIN
DRAIN
4
5
SO-8 Package (*)
(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID
VDS
DRAIN
RIN
IIN
INPUT
SOURCE
VIN
2/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
THERMAL DATA
Symbol
Value
Parameter
Unit
SOT-223
SO-8
DPAK
IPAK
R
Thermal Resistance Junction-case}}} MAX
Thermal Resistance Junction-lead MAX
Thermal Resistance Junction-ambient MAX
18
2.1
2.1
°C/W
°C/W
°C/W
thj-case
R
R
27
thj-lead
thj-amb
96 (*)
90 (*)
65 (*)
102
2
(*) When mounted on a standard single-sided FR4 board with 0.5cm of Cu (at least 35 µm thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
=0V; I =3.5A
Min
Typ
Max
Unit
Drain-source Clamp
Voltage
V
V
40
45
55
V
CLAMP
IN
D
Drain-source Clamp
Threshold Voltage
V
V
V
V
I
=0V; I =2mA
36
V
V
CLTH
IN
D
V
Input Threshold Voltage
=V ; I =1mA
0.5
2.5
INTH
DS
DS
IN
D
Supply Current from Input
Pin
I
=0V; V =5V
100
6.8
150
µA
ISS
IN
=1mA
6
8
Input-Source Clamp
Voltage
IN
V
V
INCL
I
=-1mA
-1.0
-0.3
30
IN
V
V
=13V; V =0V; T =25°C
Zero Input Voltage Drain
DS
DS
IN
j
I
µA
DSS
Current (V =0V)
=25V; V =0V
75
IN
IN
ON
Symbol
Parameter
Test Conditions
=5V; I =3.5A; T=25°C
Min
Typ
Max
60
Unit
V
V
Static Drain-source On
Resistance
IN
D
j
R
mΩ
DS(on)
=5V; I =3.5A
120
IN
D
3/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
=13V; I =3.5A
Min
Typ
9
Max
Unit
S
g
(*)
V
V
fs
DD
D
Transconductance
Output Capacitance
C
=13V; f=1MHz; V =0V
220
pF
OSS
DS
IN
SWITCHING
Symbol
Parameter
Test Conditions
Min
Typ
100
470
500
350
0.75
4.6
Max
300
Unit
ns
t
t
t
t
Turn-on Delay Time
Rise Time
d(on)
V
V
=15V; I =3.5A
D
DD
t
1500
1500
1000
2.3
ns
r
=5V; R =R =150Ω
IN MIN
gen
gen
Turn-off Delay Time
Fall Time
ns
d(off)
(see figure 1)
t
ns
f
Turn-on Delay Time
Rise Time
µs
µs
µs
µs
d(on)
V
V
=15V; I =3.5A
D
DD
t
14.0
16.0
11.0
r
=5V; R =2.2KΩ
gen
gen
Turn-off Delay Time
Fall Time
5.4
d(off)
(see figure 1)
t
3.6
f
V
V
V
=15V; I =3.5A
D
DD
(dI/dt)
Turn-on Current Slope
Total Input Charge
6.5
18
A/µs
on
=5V; R =R =150Ω
IN MIN
gen
gen
=12V; I =3.5A; V =5V
DD
D
IN
Q
nC
i
I
=2.13mA (see figure 5)
gen
SOURCE DRAIN DIODE
Symbol
(*)
Parameter
Test Conditions
Min
Typ
0.8
Max
Unit
V
V
Forward On Voltage
I
=3.5A; V =0V
SD
SD
SD
IN
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
=3.5A; dI/dt=20A/µs
=30V; L=200µH
220
0.28
2.5
ns
µC
A
rr
Q
V
rr
DD
I
(see test circuit, figure 2)
RRM
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
V =5V; V =13V
Min
Typ
Max
Unit
I
Drain Current Limit
6
9
12
A
lim
IN
DS
V =5V; V =13V
Step Response Current
Limit
IN
DS
t
4.0
µs
dlim
Overtemperature
Shutdown
T
150
175
200
°C
jsh
T
Overtemperature Reset
Fault Sink Current
135
°C
jrs
I
V
= 5V; V =13V; T=T
jsh
15
mA
gf
IN
DS
j
starting T =25°C; V =24V
j
DD
Single Pulse
E
V
=5V; R =R
=150Ω; L=24mH
200
mJ
as
IN
gen
IN MIN
Avalanche Energy
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/29
2
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
PROTECTION FEATURES
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
chip temperature and are not dependent on the
input voltage. The location of the sensing element
on the chip in the power stage area ensures fast,
accurate detection of the junction temperature.
Overtemperature cut-out occurs in the range 150
to 190 °C, a typical value being 170 °C. The device
is automatically restarted when the chip
temperature falls of about 15°C below shut-down
temperature.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC to
50KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- STATUS FEEDBACK: in the case of an
overtemperature fault condition (Tj > Tjsh), the
device tries to sink a diagnostic current Igf through
the INPUT pin in order to indicate fault condition. If
driven from a low impedance source, this current
may be used in order to warn the control circuit of
a device shutdown. If the drive impedance is high
enough so that the INPUT pin driver is not able to
supply the current Igf, the INPUT pin will fall to 0V.
This will not however affect the device
operation: no requirement is put on the current
capability of the INPUT pin driver except to be
able to supply the normal operation drive
-
OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current ID to Ilim whatever the INPUT pin
voltage. When the current limiter is active, the
device operates in the linear region, so power
dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
current IISS
.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
junction
temperature
may
reach
the
overtemperature threshold Tjsh
.
5/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
Figure 1: Switching Time Test Circuit for Resistive Load
ID
90%
10%
tf
tr
t
td(on)
td(off)
Vgen
t
Figure 2: Test Circuit for Diode Recovery Times
A
A
B
D
I
FAST
DIODE
L=100uH
OMNIFET
S
B
150Ω
D
S
V
DD
R
gen
I
OMNIFET
V
gen
8.5 Ω
6/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms
R
GEN
V
IN
P
W
Figure 5: Input Charge Test Circuit
V
IN
7/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
Source-Drain Diode Forward Characteristics
Static Drain Source On Resistance
Vsd (mV)
1000
Rds(on) (mOhm)
500
Tj= - 40ºC
950
450
400
350
300
250
200
150
100
50
Vin=0V
900
Vin=2.5V
850
800
750
700
650
600
550
500
Tj=25ºC
Tj=150ºC
0
0
2
4
6
8
10
12
14
0
0.25
0.5
0.75
1
1.25
Id(A)
Id(A)
Static Drain-Source On resistance Vs. Input
Voltage
Derating Curve
Rds(on) (mOhm)
120
110
Id=3.5A
100
90
Tj=150ºC
80
70
60
50
Tj=25ºC
40
30
Tj= - 40ºC
20
10
0
3
3.5
4
4.5
5
5.5
6
6.5
7
Vin(V)
Static Drain-Source On resistance Vs. Input
Voltage
Transconductance
Rds(on) (mOhm)
140
Gfs (S)
20
18
120
Vds=13V
Tj=150ºC
16
Tj=-40ºC
100
Tj=25ºC
14
12
10
8
Id=6A
Tj=150ºC
Id=1A
80
Tj=25ºC
60
Id=6A
Id=1A
Tj=-40ºC
6
40
20
0
Id=6A
Id=1A
4
2
0
3
3.5
4
4.5
Vin(V)
5
5.5
6
6.5
0
1
2
3
4
5
6
7
8
Id(A)
8/29
1
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
Static Drain-Source On Resistance Vs. Id
Transfer Characteristics
Rds(on) (mOhm)
140
Idon(A)
10
Tj=25ºC
9
Tj=-40ºC
120
Vds=13.5V
Tj=150ºC
8
Vin=3.5V
100
80
60
40
20
0
7
6
5
4
3
2
1
0
Tj=150ºC
Vin=5V
Vin=3.5V
Tj=25ºC
Tj=-40ºC
Vin=5V
Vin=3.5V
Vin=5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Id(A)
Vin(V)
Turn On Current Slope
Turn On Current Slope
di/dt(A/us)
2.25
di/dt(A/us)
8
2
1.75
1.5
7
6
5
4
3
2
1
0
Vin=3.5V
Vdd=15V
Id=3.5A
Vin=5V
Vdd=15V
Id=3.5A
1.25
1
0.75
0.5
0.25
100 200 300 400 500 600 700 800 900 1000 1100
Rg(ohm)
200
400
600
800
1000
100
300
500
700
900
1100
Rg(ohm)
Turn off drain source voltage slope
Input Voltage Vs. Input Charge
dv/dt(V/us)
300
Vin(V)
8
250
7
Vds=12V
Id=3.5A
Vin=5V
Vdd=15V
6
200
Id=3.5A
5
4
3
2
1
0
150
100
50
0
100 200 300 400 500 600 700 800 900 1000 1100
Rg(ohm)
0
5
10
15
20
25
Qg(nC)
9/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
Turn Off Drain-Source Voltage Slope
Capacitance Variations
C(pF)
600
dv/dt(v/us)
300
250
500
400
300
200
100
f=1MHz
Vin=0V
Vin=3.5V
Vdd=15V
Id=3.5A
200
150
100
50
0
200
400
600
Rg(ohm)
800
1000
1100
100
300
500
700
900
0
5
10
15
20
25
30
35
Vds(V)
Switching Time Resistive Load
Switching Time Resistive Load
t(us)
5.5
t(ns)
1600
tr
5
Vdd=15V
Id=3.5A
Vin=5V
1400
tr
tf
4.5
Vdd=15V
Id=3.5A
Rg=150ohm
td(off)
1200
1000
800
600
400
200
0
4
3.5
3
2.5
2
1.5
td(off)
td(on)
1
tf
td(on)
0.5
0
250
750
1250
1750
2250
2500
0
500
1000
1500
2000
3.25
3.5
3.75
4
4.25
Vin(V)
4.5
4.75
5
5.25
Rg(ohm)
Normalized On Resistance Vs. Temperature
Output Characteristics
Rds(on)
ID(A)
12
2.25
11
10
9
2
Vin=5V
Id=3.5A
Vin=5V
1.75
Vin=4.5V
Vin=4V
8
7
1.5
1.25
1
Vin=3V
6
5
4
3
Vin=2.5V
2
0.75
0.5
1
Vin=2V
0
-50
-25
0
25
50
75
100 125 150
175
0
1
2
3
4
5
6
7
8
9
10 11 12 13
T(ºC)
VDS(V)
10/29
1
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
Normalized Input Threshold Voltage Vs.
Current Limit Vs. Junction Temperature
Temperature
Ilim (A)
Vin(th)
15
1.15
14
1.1
1.05
1
Vds=13V
Vin=5V
13
Vds=Vin
Id=1mA
12
11
10
9
0.95
0.9
0.85
0.8
8
7
0.75
0.7
6
5
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100 125 150
175
Tj (ºC)
T(ºC)
Step Response Current Limit
Tdlim(us)
7
6.5
Vin=5V
Rg=150ohm
6
5.5
5
4.5
4
3.5
5
10
15
20
25
30
35
Vdd(V)
11/29
1
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SO-8 Maximum turn off current versus load inductance
LMAX (A)
I
100
10
1
A
B
C
0.01
0.1
1
10
100
L(mH)
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
12/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
DPAK Maximum turn off current versus load inductance
LMAX (A)
I
100
10
A
B
C
1
0.01
0.1
1
10
100
L(mH)
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
13/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SOT-223 Maximum turn off current versus load inductance
LMAX (A)
I
100
10
1
A
B
C
0.01
0.1
1
10
L(mH)
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
14/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SO-8 THERMAL DATA
SO-8 PC Board
Layout condition of R and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
th
th
2
2
2
Cu thickness=35µm, Copper areas: 0.14cm , 0.6cm , 1.6cm ).
Rthj-amb Vs PCB copper area in open box free air condition
SO-8 at 4 pins connected to TAB
RTHj_amb
(ºC/W)
110
105
100
95
90
85
80
75
70
0
0.5
1
1.5
2
2.5
PCB CU heatsink area (cm^2)
15/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SOT-223 THERMAL DATA
SOT-223 PC Board
Layout condition of R and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
th
th
2
2
2
Cu thickness=35µm, Copper areas: 0.11cm , 1cm , 2cm ).
Rthj-amb Vs PCB copper area in open box free air condition
RTH j-amb (°C/W)
140
130
120
110
100
90
80
70
60
0
0.5
1
1.5
2
2.5
Cu area (cm^2)
16/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
DPAK THERMAL DATA
DPAK PC Board
Layout condition of R and Z measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
th
th
2
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm ).
Rthj-amb Vs PCB copper area in open box free air condition
RTH j_amb (ºC/W)
90
80
70
60
50
40
30
0
2
4
6
8
10
PCB CU heatsink area (cm^2)
17/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
DPAK Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
Footprint
100
10
1
2
6 cm
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Thermal fitting model of an OMNIFET II in
DPAK
Pulse calculation formula
ZTHδ = RTH δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Thermal Parameter
2
Area/island (cm )
R1 (°C/W)
Footprint
0.1
6
24
5
R2 (°C/W)
0.35
1.20
2
Tj
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
R3 ( °C/W)
R4 (°C/W)
R5 (°C/W)
15
Pd
R6 (°C/W)
61
T_amb
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
0.0006
0.0021
0.05
0.3
0.45
0.8
18/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SO-8 Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
Footprint
100
10
1
2
2 cm
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Thermal fitting model of an OMNIFET II in SO-8
Pulse calculation formula
ZTHδ = RTH δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Thermal Parameter
2
Area/island (cm )
R1 (°C/W)
Footprint
0.2
2
28
2
R2 (°C/W)
0.9
Tj
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
R3 ( °C/W)
R4 (°C/W)
3.5
21
R5 (°C/W)
16
Pd
R6 (°C/W)
58
T_amb
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
3.00E-04
9.00E-04
7.50E-03
0.045
0.35
1.05
19/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SOT-223 Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
Footprint
100
10
1
2
2 cm
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Thermal fitting model of an OMNIFET II in
SOT-223
Pulse calculation formula
ZTHδ = RTH δ + ZTHtp(1 – δ)
δ = tp ⁄ T
where
Thermal Parameter
2
Area/island (cm )
R1 (°C/W)
Footprint
0.2
2
45
2
Tj
R2 (°C/W)
1.1
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
R3 ( °C/W)
R4 (°C/W)
4.5
24
R5 (°C/W)
0.1
Pd
R6 (°C/W)
100
T_amb
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
3.00E-04
9.00E-04
3.00E-02
0.16
1000
0.5
20/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
TO-251 (IPAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
2.2
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
21/29
1
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
TO-252 (DPAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
2.2
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
R
0.8
0.031
0.6
1
0.023
0.039
0.2
0.008
V2
0°
8°
0°
8°
22/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SOT-223 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
1.8
MIN.
MAX.
0.071
0.033
0.124
0.014
0.264
A
B
0.6
2.9
0.7
3
0.85
3.15
0.35
6.7
0.024
0.114
0.009
0.248
0.027
0.118
0.01
B1
c
0.24
6.3
0.26
6.5
2.3
4.6
3.5
7
D
0.256
0.09
e
e1
E
0.181
0.138
0.276
3.3
6.7
3.7
7.3
0.13
0.146
0.287
H
0.264
V
10 (max)
A1
0.02
0.1
0.0008
0.004
0046067
23/29
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SO-8 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
F
8 (max.)
24/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
1000
1000
330
1.5
13
20.2
12.4
60
G (+ 2 / -0)
N (min)
T (max)
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
W
P0 (± 0.1)
P
12
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
5.5
4.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
25/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
SO-8 TUBE SHIPMENT (no suffix)
B
Base Q.ty
100
2000
532
3.2
6
C
A
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
2500
2500
330
1.5
13
20.2
12.4
60
G (+ 2 / -0)
N (min)
T (max)
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
12
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
5.5
4.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
End
All dimensions are in mm.
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
26/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
6 .7
1 .8
3 .0
1 .6
Base Q.ty
75
3000
532
6
C
Bulk Q.ty
Tube length (± 0.5)
2 .3
2 .3
6 .7
A
B
B
21.3
0.6
C (± 0.1)
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
2500
2500
330
1.5
13
20.2
16.4
60
G (+ 2 / -0)
N (min)
T (max)
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
16
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
7.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
27/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
IPAK TUBE SHIPMENT (no suffix)
A
C
Base Q.ty
75
3000
532
6
Bulk Q.ty
Tube length (± 0.5)
A
B
B
21.3
0.6
C (± 0.1)
All dimensions are in mm.
28/29
1
VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2003 STMicroelectronics - Printed in ITALY- All Rights Reserved.
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29/29
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