SSM6E01TU [TOSHIBA]
Load Switch Applications; 负载开关应用
| 型号： | SSM6E01TU |
| 厂家： | 
TOSHIBA |
| 描述： | Load Switch Applications |
| 文件： | 总9页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6E01TU
TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
Unit: mm
·
·
P-channel MOSFET and N-channel MOSFET incorporated into one
package.
Low power dissipation due to P-channel MOSFET that features low
R
and low-voltage operation
DS (ON)
Q1 Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
-12
±12
V
V
DS
Gate-Source voltage
V
GSS
DC
I
-1.0
-2.0
D
Drain current
A
Pulse
I
(Note 2)
DP
Q2 Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
JEDEC
―
―
―
V
20
10
V
V
DS
JEITA
Gate-Source voltage
V
GSS
TOSHIBA
DC
I
0.05
0.2
D
Drain current
A
Weight: 7.0 mg (typ.)
Pulse
I
(Note 2)
DP
Maximum Ratings (Q1, Q2 common) (Ta = 25°C)
Characteristics
Symbol
(Note 1)
Rating
Unit
Drain power dissipation
Channel temperature
P
0.5
150
W
°C
°C
D
T
ch
Storage temperature range
T
-55~150
stg
Note 1: Mounted on an FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2)
Note 2: Pulse width limited by maximum channel temperature.
Marking
Equivalent Circuit (top view)
6
5
4
3
6
5
4
Q1
Q2
KTA
1
2
1
2
3
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2003-01-16
SSM6E01TU
Handling Precaution
This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices
(that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity.
Operators should wear anti-static clothing, containers and other objects which may come into direct contact with
devices should be made of anti-static materials.
Thermal resistance R
and drain power dissipation PD vary depending on board material, board area, board
th (j-a)
thickness and pad area. When using this device, please take heat dissipation into consideration.
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2003-01-16
SSM6E01TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage (diode)
Symbol
Test Condition
= 1.0 A, V = 0 V
Min
Typ.
Max
Unit
V
I
¾
¾
¾
¾
1.2
±1
V
mA
V
DSF
DR
GS
Gate leakage current
I
V
= ±10 V, V = 0
GS DS
GSS
Drain-Source breakdown voltage
Drain cut-off current
V
I
= -1 mA, V = 0
GS
-12
¾
¾
¾
(BR) DSS
D
I
V
V
V
= -12 V, V = 0
GS
¾
-1
mA
V
DSS
DS
DS
DS
Gate threshold voltage
Forward transfer admittance
V
= -3 V, I = -0.1 mA
-0.4
1.3
¾
¾
-1.1
¾
th
D
|Y |
fs
= -3 V, I = -0.5 A
(Note 3)
(Note 3)
2.5
125
180
310
S
D
I
I
= -0.5 A, V
= -4 V
160
240
¾
D
D
GS
GS
Drain-Source ON resistance
R
mW
DS (ON)
= -0.5 A, V
= -2.5 V (Note 3)
= 0, f = 1 MHz
¾
Input capacitance
C
iss
V
= -10 V, V
¾
pF
DS
GS
Note 3: Pulse test
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= 10 V, V = 0
Min
Typ.
Max
Unit
I
V
¾
20
¾
¾
¾
¾
¾
50
4
15
¾
1
mA
V
GSS
GS
DS
Drain-Source breakdown voltage
Drain cut-off current
V
I
= 0.1 mA, V
= 0
= 0
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
mA
V
DSS
DS
DS
DS
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
V
= 3 V, I = 0.1 mA
0.7
25
¾
1.3
¾
10
¾
1.3
th
D
|Y |
fs
= 3 V, I = 10 mA
(Note 3)
(Note 3)
mS
W
D
R
I
= 10 mA, V
= 2.5 V
GS
DS (ON)
D
C
iss
V
V
= 3 V, V = 0, f = 1 MHz
GS
¾
11
1.0
pF
MW
DS
GS
Gate-Source resistance
R
GS
= 0~10 V
0.7
Note 3: Pulse test
Precaution
V
can be expressed as voltage between gate and source when low operating current value is I = ±100 mA for
D
th
this product. For normal switching operation, V
requires higher voltage than V and V
th GS (off)
requires lower
GS (on)
voltage than V . (Relationship can be established as follows: V
< V < V )
th GS (on)
th
GS (off)
Please take this into consideration for using the device. 2.5 V or higher is recommended for V
on the N-channel MOSFET of this product.
voltage to turn
GS
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2003-01-16
SSM6E01TU
Load Switch Application
Pch
+Vdrop-
Vin
R1
Vout
IN
OUT
ON/OFF
ON/OFF
Nch
1 MW
Load Switch Ratings (Ta = 25°C)
Characteristics
Input voltage
Symbol
Rating
Unit
V
2.5~12
2.5~10
1
V
V
in
ON/OFF voltage
V
on/off
Load current (DC)
Load current (pulse)
Channel temperature
I
A
L
I
(Note 4)
2
A
LP
T
150
°C
ch
Note 4: Pulse width limited by maximum channel temperature.
Load Switch Electrical Characteristics (Ta = 25°C)
Characteristics
Leakage current
Symbol
Test Condition
= 8 V, V = 0
Min
¾
Typ.
¾
Max
1
Unit
I
V
V
mA
FL
in
in
ON/OFF
= 3.0 V, V
= 2.5 V,
ON/OFF
V
V
¾
0.09
0.12
DROP (1)
DROP (2)
I
= 0.5 A
L
P-channel drop voltage
N-channel drive voltage
V
V
V
= 5.0 V, V
= 2.5 V,
in
ON/OFF
¾
0.13
0.16
1.3
I
= 1.0 A
L
V
V
= 3 V, I = 0.1 mA
0.7
¾
on/off
DS
D
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SSM6E01TU
Q1 (Pch MOSFET)
I
– V
I – V
D GS
D
DS
-2
-10000
-1000
-100
-10
-4 V
Common source
= -3 V
-2.0 V
V
DS
-10 V
-1.8 V
-1.7 V
-1.5
-1
Ta = 25°C
-25°C
100°C
-1
-0.5
0
-0.1
Common source
Ta = 25°C
-0.01
0
-0.5
-1
-1.5
-2
0
-0.5
-1
-1.5
-2
-2.5
Drain-Source voltage
V
(V)
Gate-Source voltage
V
(V)
DS
GS
R
– I
R
– V
DS (ON)
D
DS (ON) GS
0.5
0.4
0.3
0.2
0.1
0
1
0.8
0.6
0.4
0.2
0
Common source
Ta = 25°C
Common source
= -0.5 A
I
D
-2.5 V
25°C
-4.0 V
-1.5
Ta = 100°C
-8
-25°C
0
-0.5
-1.0
-2.0
0
-2
-4
-6
-10
(V)
-12
Drain current
I
D
(A)
Gate-Source voltage
V
GS
R
– Ta
V
– Ta
th
DS (ON)
0.5
0.4
0.3
0.2
0.1
0
-1
-0.8
-0.6
-0.4
-0.2
0
Common source
= -3 V
Common source
V
DS
= -0.1 mA
I
= -0.5 A
D
I
D
-2.5 V
-4 V
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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SSM6E01TU
Q1 (Pch MOSFET)
ïY ï – I
fs
C – V
DS
D
10
1
1000
100
10
C
iss
C
oss
0.1
0.01
C
rss
Common source
= 0
V
GS
f = 1 MHz
Ta = 25°C
-0.1
-1
Drain-Source voltage
-10
-100
-1
-10
-100
-1000
(mA)
-10000
Drain current
I
D
V
(V)
DS
Dynamic input characteristics
t – I
D
-10
500
100
Common source
Common source
= -1.0 A
Ta = 25°C
V
V
R
= -10 V
= 0 to -2.5 V
= 4.7 W
DD
GS
G
I
D
-8
-6
-4
-2
0
Ta = 25°C
t
off
V
DD
= -10 V
t
f
t
on
10
5
0
2
4
6
8
t
r
Total gate charge Qg (nC)
-0.01
-0.1
Drain current
-1
I
D
(A)
I
– V
DS
DR
-2
-1.6
-1.2
-0.8
-0.4
0
Common source
V
GS
= 0 V
D
Ta = 25°C
G
S
0
0.2
0.4
0.6
0.8
1
Drain-Source voltage
V
(V)
DS
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SSM6E01TU
Q2 (Nch MOSFET)
I
– V
I
– V (low-voltage area)
D
DS
D
DS
100
100
80
2.5
2.0
2.0
4.0
2.5
2.2
Common source
Ta = 25°C
80
1.9
Common source
Ta = 25°C
60
40
60
40
20
0
1.8
1.8
1.6
1.7
1.6
20
0
V
= 1.4 V
GS
V
= 1.4 V
GS
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Drain-Source voltage
V
(V)
Drain-Source voltage
V
(V)
DS
DS
I
– V
I – V
D GS
DR
DS
100
1000
100
10
Common source
= 0
Common source
V
GS
V
DS
= 3 V
Ta = 25°C
D
10
1
G
I
DR
Ta = 100°C
1
0.1
25°C
S
-25°C
0.1
0.01
0.01
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
0
0.5
1
1.5
2
2.5
(V)
3
0
Drain-Source voltage
V
Gate-Source voltage
V
GS
DS
ïY ï – I
fs
D
300
100
C – V
DS
Common source
100
V
= 3 V
DS
Ta = 25°C
Common source
= 0
f = 1 MHz
V
GS
50
30
Ta = 25°C
50
30
C
iss
10
C
oss
5
3
10
5
C
rss
1
1
3
5
10
30
(mA)
50
100
0.1
0.3
1
3
10
30
Drain current
I
D
Drain-Source voltage
V
(V)
DS
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2003-01-16
SSM6E01TU
Q2 (Nch MOSFET)
R
– I
t – I
D
DS (ON)
D
10
8
10000
Common source
Common source
Ta = 25°C
V
V
= 3 V
= 0~2.5 V
DD
GS
5000
3000
Ta = 25°C
t
off
1000
6
4
2
0
t
f
500
300
2.5
t
on
100
V
= 4 V
GS
t
r
50
30
0.1
0.3
1
3
10
(mA)
30
100
0
20
40
60
80
100
Drain current
I
D
Drain current
I
D
(mA)
R
– Ta
DS (ON)
10
8
Common source
I
= 10 mA
D
6
2.5
4
V
GS
= 4 V
2
0
0
25
50
75
100
125
150
-25
Ambient temperature Ta (°C)
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2003-01-16
SSM6E01TU
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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