70-W212NMA600SC-M200P [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 70-W212NMA600SC-M200P |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总31页 (文件大小：1370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W212NMA600SC-M200P
datasheet
VINcoMNPC X4
1200 V / 600 A
VINco X4 housing
Features
● Mixed-voltage NPC
● Low inductive
● High power screw interface
● Integrated DC-snubber capacitors
Target Applications
● Solar inverter
● UPS
Schematic
● High speed motor drive
Types
● 70-W212NMA600SC-M200P
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Buck Switch ( T1 , T4 )
Collector-emitter breakdown voltage
DC collector current
VCE
IC
1200
V
A
Th=80°C
Tc=80°C
498
637
Tj=Tjmax
ICpulse
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation
1800
A
Th=80°C
Tc=80°C
1188
1799
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
VCE max = 1200V
Tvj max= 150°C
Icmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
1200
175
A
Tjmax
°C
Buck Diode ( D2 , D3 )
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj=25°C
600
V
A
A
Th=80°C
Tc=80°C
288
384
Tj=Tjmax
IFSM
Surge forward current
1250
7800
1200
tp = 10 ms, sine halfwave
Tvj < 150°C
I2t
A2s
A
I2t-value
IFRM
tP = 1 ms
Tj=Tjmax
Tvj < 150°C
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
Th=80°C
Tc=80°C
365
554
Ptot
W
Tjmax
175
°C
copyright Vincotech
1
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Boost Switch ( T2 , T3 )
Collector-emitter breakdown voltage
DC collector current
VCE
IC
600
V
A
Th=80°C
Tc=80°C
388
510
Tj=Tjmax
ICpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation
1800
A
Th=80°C
Tc=80°C
594
900
W
V
Gate-emitter peak voltage
Short circuit ratings
±20
tSC
Tj≤150°C
6
µs
V
VCC
VGE=15V
360
VCE max = 1200V
Tvj max= 150°C
Icmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
1200
175
A
Tjmax
°C
Boost Diode ( D1 , D4 )
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj=25°C
1200
V
A
A
Th=80°C
Tc=80°C
355
470
Tj=Tjmax
IFSM
Surge forward current
3600
16200
1800
tp=10ms , sin 180°
Tj=150°C
I2t
A2s
A
I2t-value
IFRM
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
Th=80°C
Tc=80°C
633
960
Ptot
W
Tjmax
175
°C
copyright Vincotech
2
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
DC link Capacitor
Max.DC voltage
VMAX
TOP
630
-40...+105
10
V
°C
A
Operation Temperature
RMS Current
IRMS
General Module Properties
Material of module baseplate
Material of internal isulation
Cu
Al2O3
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
for power part
t=2s
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Vis
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
3
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or IC [A] or
VCE [V] or IF [A] or
VGE [V] or
VGS [V]
Tj
Min
Max
VDS [V]
ID [A]
Buck Switch ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl.
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
6,5
2,4
VGE(th) VCE=VGE
0,024
600
V
V
2,16
2,42
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,6
1200
0
mA
nA
Ω
3000
20
1,25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
296
310
57
Rise time
64
ns
350
410
62
td(off)
Turn-off delay time
Rgoff=1 Ω
Rgon=1 Ω
±15
350
600
tf
Fall time
83
12
Eon
Turn-on energy loss
17
mWs
pF
20
Eoff
Turn-off energy loss
31
Cies
Input capacitance
37200
2320
2040
4800
0,08
Coss
Crss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
QGate
Rth(j-s)
Rth(j-c)
±15
600
600
nC
phase-change
material
ʎ=3,4W/mK
Thermal resistance junction to sink
Thermal resistance junction to case
K/W
0,06
Buck Diode ( D2 , D3 )
FWD forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,2
1,67
1,65
339
399
132
257
23
2,3
VF
IRRM
trr
600
600
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Rgon=1 Ω
±15
350
µC
44
di(rec)max
/dt
4888
3314
5
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance junction to sink
Thermal resistance junction to case
A/µs
mWs
Erec
Rth(j-s)
Rth(j-c)
9
phase-change
material
ʎ=3,4W/mK
0,26
K/W
0,17
Boost Switch ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl.
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
6,5
2,3
VGE(th)
VCE(sat)
ICES
VCE=VGE
0,0096
600
V
V
1,57
1,80
15
0
0,1
600
0
mA
nA
Ω
3000
IGES
Rgint
td(on)
tr
20
0,5
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
244
250
49
Rise time
53
ns
306
325
48
td(off)
tf
Turn-off delay time
Rgoff=1 Ω
Rgon=1 Ω
±15
350
600
Fall time
67
8
Eon
Turn-on energy loss
13
mWs
pF
15
Eoff
Turn-off energy loss
22
Cies
Input capacitance
36960
2304
1096
6400
0,16
Coss
Crss
QGate
Rth(j-s)
Rth(j-c)
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
300
600
nC
phase-change
material
ʎ=3,4W/mK
Thermal resistance junction to sink
Thermal resistance junction to case
K/W
0,11
copyright Vincotech
4
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or IC [A] or
VCE [V] or IF [A] or
VGE [V] or
VGS [V]
Tj
Min
Max
VDS [V]
ID [A]
Boost Diode ( D1 , D4 )
FWD forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,23
2,31
3
VF
Ir
600
V
μA
720
Reverse leakage current
1200
350
422
568
76
290
20
61
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=1 Ω
±15
600
µC
di(rec)max
/dt
14692
12189
4
A/µs
mWs
Erec
14
phase-change
material
ʎ=3,4W/mK
Rth(j-s)
Rth(j-c)
Thermal resistance junction to sink
Thermal resistance junction to case
0,15
K/W
0,10
DC link Capacitor
Capacitance
C
1360
nF
%
Tolerance
-10
+10
TJ=20ºC
Dissipation factor
Climatic category
0,0004
mΩ
40/105/56
22000
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
ΔR/R
P
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Ω
%
R100=1484 Ω
-5
+5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1%
Tol. ±1%
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Module Properties
LsCE
LsCE
Rcc'1+EE'
M
Module inductance (from chips to PCB)
Module inductance (from PCB to PCB using Intercon board)
Resistance of Intercon boards (from PCB to PCB using Intercon board)
Mounting torque
5
3
nH
nH
mΩ
Nm
Nm
Nm
g
Tc=25°C, per switch
1,5
Screw M4 - mounting according to valid application note
VINcoX-*-HI
Screw M5 - mounting according to valid application note
VINcoX-*-HI
Screw M6 - mounting according to valid application note
VINcoX-*-HI
2
4
2,2
6
Mounting torque
M
Terminal connection torque
M
2,5
5
G
Weight
710
copyright Vincotech
5
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Buck
Half bridge IGBT and Neutral point FWD
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1200
1200
1000
800
600
400
200
1000
800
600
400
200
0
0
0
0
V
CE (V)
V
CE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
350
25
μs
°C
350
125
μs
°C
Tj =
Tj =
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
500
1200
1000
800
400
300
200
100
600
400
Tj = Tjmax-25°C
200
Tj = 25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
0
0,5
1
1,5
2
2,5
2
4
6
8
10
12
VGE (V)
VF (V)
At
At
tp =
tp =
350
10
μs
350
μs
VCE
=
V
copyright Vincotech
6
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Buck
Half bridge IGBT and Neutral point FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
60
45
30
15
0
80
60
40
20
0
Eoff High T
Eon High T
Eon Low T
Eoff Low T
Eon High T
Eoff High T
Eon Low T
Eoff Low T
0
200
400
600
800
1000
1200
I
C (A)
R G ( Ω)
0
2
4
6
8
10
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
25/125
350
±15
1
25/125
350
VCE
VGE
=
VCE
VGE
=
=
=
V
±15
V
Rgon
Rgoff
=
=
IC =
Ω
Ω
596
A
1
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
12
10
8
12
10
8
Erec High T
Erec High T
6
6
Erec Low T
4
4
Erec Low T
2
2
0
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
25/125
350
±15
1
°C
V
25/125
350
°C
V
VCE
VGE
=
VCE
VGE
=
=
=
V
±15
V
Rgon
=
IC =
Ω
596
A
copyright Vincotech
7
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Buck
Half bridge IGBT and Neutral point FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
10,00
10,00
1,00
0,10
0,01
0,00
tdoff
1,00
tdon
tdoff
tdon
tr
tf
0,10
tf
tr
0,01
0,00
0
2
4
6
8
10
0
200
400
600
800
1000
1200
I
C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
1
°C
V
125
350
±15
596
°C
V
VCE
VGE
=
VCE
VGE
=
=
=
V
V
Rgon
Rgoff
=
=
IC =
Ω
Ω
A
1
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,5
trr High T
trr High T
0,4
0,3
0,2
0,1
trr Low T
trr Low T
0,0
0
0
200
400
600
800
1000
1200
I C (A)
2
4
6
8
10
R gon ( Ω)
At
At
Tj =
Tj =
VR =
IF =
25/125
350
±15
1
°C
25/125
350
°C
V
VCE
VGE
=
V
V
Ω
=
596
A
Rgon
=
VGE =
±15
V
copyright Vincotech
8
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Buck
Half bridge IGBT and Neutral point FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
60
50
40
30
20
10
0
50
Qrr High T
Qrr High T
40
30
20
10
Qrr Low T
Qrr Low T
0
0
0
200
400
600
800
1000
1200
I C (A)
2
4
6
8
10
R
gon ( Ω)
At
At
Tj =
Tj =
25/125
350
±15
1
°C
25/125
350
°C
V
VCE
VGE
=
=
VR =
IF =
V
V
Ω
596
A
Rgon
=
VGE =
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
500
400
300
200
100
0
500
IRRM High T
400
300
200
100
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
Tj =
Tj =
VR =
IF =
25/125
350
±15
1
°C
25/125
350
°C
V
VCE
VGE
=
=
V
V
Ω
596
A
Rgon
=
VGE =
±15
V
copyright Vincotech
9
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Buck
Half bridge IGBT and Neutral point FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
14000
20000
dIrec/dt T
dI0/dt T
dIrec/dt T
12000
16000
12000
8000
4000
0
10000
dIo/dt T
8000
6000
4000
2000
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I
C (A)
R gon ( Ω)
At
At
Tj =
Tj =
VR =
IF =
25/125
350
±15
1
°C
V
25/125
350
°C
V
VCE
VGE
=
=
V
596
A
Rgon
=
VGE =
Ω
±15
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
10-2
10-2
0,05
0,1
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-3
10-5
10-3
10-5
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
101
10-4
10-3
10-2
10-1
100
101
1
At
D =
At
tp / T
0,08
tp / T
0,26
D =
RthJH =
R
thJH
=
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W) Tau (s)
3,54E-02 1,20E+00
2,06E-02 1,85E-01
2,16E-02 3,61E-02
2,86E-03 8,04E-03
4,30E-03 6,80E-04
R (C/W) Tau (s)
4,86E-02 5,38E+00
5,69E-02 1,12E+00
4,08E-02 2,59E-01
7,52E-02 4,95E-02
2,43E-02 1,67E-02
6,46E-03 3,42E-03
1,22E-02 3,99E-04
copyright Vincotech
10
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Buck
Half bridge IGBT and Neutral point FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
2500
2000
1500
1000
500
800
700
600
500
400
300
200
100
0
0
o C)
200
T h (
T h (
o C)
0
50
100
150
200
0
50
100
150
At
At
Tj =
Tj =
175
°C
175
15
°C
V
VGE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
700
600
500
400
300
200
100
0
500
400
300
200
100
0
0
50
100
150
200
o C)
T h (
o C)
0
50
100
150
200
T h
(
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
11
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Buck
Half bridge IGBT and Neutral point FWD
Figure 25
IGBT
Figure 26
IGBT
Safe operating area as a function
of collector-emitter voltage
Gate voltage vs Gate charge
IC = f(VCE
)
VGE = f(Qg)
17,5
103
15
12,5
10
240V
102
960V
101
7,5
5
100
2,5
0
10-1
0
150
300
450
600
750
900
100
103
VCE (V)
Q g (nC)
101
102
At
At
D =
Th =
single pulse
IC =
600
A
80
ºC
VGE
Tj =
=
±15
Tjmax
V
ºC
Figure 27
Reverse bias safe operating area
IGBT
IC = f(VCE
)
1400
ICMAX
1200
1000
800
600
400
200
0
0
200
400
600
800
1000
1200
1400
VCE (V)
At
Tj =
Tjmax-25
ºC
Uccminus=Uccplus
Switching mode :
3 level switching
copyright Vincotech
12
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Boost
Neutral point IGBT and Half bridge FWD
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1000
1000
800
600
400
200
800
600
400
200
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
350
25
μs
°C
350
125
μs
°C
Tj =
Tj =
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
500
1200
1000
800
400
300
200
100
600
Tj = Tjmax-25°C
400
Tj = 25°C
200
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
2
4
6
8
10
12
VGE (V)
VF (V)
0
1
2
3
4
At
At
tp =
tp =
350
μs
350
μs
VCE
=
0
V
copyright Vincotech
13
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Boost
Neutral point IGBT and Half bridge FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
50
40
30
20
10
0
120
100
80
60
40
20
0
Eon High T
Eoff High T
Eon Low T
Eoff Low T
Eon High T
Eoff High T
Eoff Low T
Eon Low T
0
200
400
600
800
1000
1200
0
2
4
6
8
10
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
Tj =
25/125
350
±15
1
°C
V
25/125
350
°C
V
VCE
VGE
=
VCE
VGE
=
=
=
V
±15
V
Rgon
Rgoff
=
=
IC =
Ω
Ω
600
A
1
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
20
15
10
5
20
16
12
8
Erec High T
Erec High T
Erec Low T
4
Erec Low T
0
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
Tj =
25/125
350
±15
1
°C
V
25/125
350
°C
V
VCE
VGE
=
VCE
VGE
=
=
=
V
±15
V
Rgon
=
IC =
Ω
600
A
copyright Vincotech
14
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Boost
Neutral point IGBT and Half bridge FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
10
tdoff
tdoff
tdon
tdon
1
0,1
tf
tr
tf
0,1
tr
0,01
0,01
0,001
0,001
I
C (A)
R G ( Ω )
0
200
400
600
800
1000
1200
0
2
4
6
8
10
With an inductive load at
With an inductive load at
Tj =
Tj =
125
350
±15
1
°C
V
125
350
±15
600
°C
V
VCE
VGE
=
VCE
VGE
=
=
=
V
V
Rgon
Rgoff
=
=
IC =
Ω
Ω
A
1
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
1,2
trr High T
trr High T
1
0,8
0,6
0,4
0,2
trr Low T
trr Low T
0
0
2
4
6
8
10
0
200
400
600
800
1000
1200
I C (A)
R gon ( Ω)
At
At
Tj =
Tj =
VR =
IF =
25/125
350
±15
1
°C
V
25/125
350
°C
V
VCE
VGE
=
=
V
600
A
Rgon
=
VGE =
Ω
±15
V
copyright Vincotech
15
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Boost
Neutral point IGBT and Half bridge FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
80
60
40
20
0
100
Qrr High T
Qrr High T
80
60
40
20
Qrr Low T
Qrr Low T
0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I
C (A)
R
gon ( Ω)
At
At
Tj =
Tj =
25/125
350
±15
1
°C
25/125
350
°C
V
VCE
VGE
=
=
VR =
IF =
V
V
Ω
600
A
Rgon
=
VGE =
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
700
600
500
400
300
200
100
0
800
IRRM High T
IRRM Low T
600
400
200
IRRM High T
IRRM Low T
0
0
2
4
6
8
10
0
200
400
600
800
1000
1200
I C (A)
R gon ( Ω)
At
At
Tj =
Tj =
VR =
IF =
25/125
350
±15
1
°C
25/125
350
°C
V
VCE
VGE
=
V
V
Ω
=
600
A
Rgon
=
VGE =
±15
V
copyright Vincotech
16
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Boost
Neutral point IGBT and Half bridge FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
24000
25000
dIrec/dt T
dI0/dt T
dIo/dt T
20000
20000
15000
10000
5000
0
dIrec/dt T
16000
12000
8000
4000
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
Tj =
Tj =
VR =
IF =
25/125
350
±15
1
°C
V
25/125
°C
V
VCE
VGE
=
350
600
±15
=
V
A
Rgon
=
VGE
=
Ω
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
10-2
10-2
0,1
0,1
0,05
0,05
0,02
0,01
0,02
0,01
0,005
0.000
0,005
0.000
10-3
10-3
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
102
At
At
D =
RthJH
tp / T
0,16
D =
RthJH =
tp / T
0,15
=
K/W
K/W
IGBT thermal model values
R (K/W) Tau (s)
FWD thermal model values
R (K/W) Tau (s)
4,60E-02 4,40E+00
2,82E-02 1,10E+00
2,81E-02 2,36E-01
3,54E-02 5,04E-02
1,47E-02 1,71E-02
2,19E-03 2,97E-03
4,85E-03 4,64E-04
2,30E-02 6,05E+00
3,53E-02 1,29E+00
2,90E-02 2,22E-01
4,43E-02 4,71E-02
8,50E-03 1,13E-02
6,93E-03 1,30E-03
copyright Vincotech
17
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Boost
Neutral point IGBT and Half bridge FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
1200
1000
800
600
400
200
0
600
500
400
300
200
100
0
o C)
T h (
o C)
0
50
100
150
200
T h
(
0
50
100
150
200
At
At
Tj =
Tj =
175
ºC
175
15
ºC
V
VGE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
1200
1000
800
600
400
200
0
600
500
400
300
200
100
0
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
Th
(
At
At
Tj =
Tj =
175
ºC
175
ºC
copyright Vincotech
18
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Boost
Neutral point IGBT
Figure 25
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1400
ICMAX
1200
1000
800
600
400
200
0
0
100
200
300
400
500
600
700
VCE(V)
At
Tj =
Tjmax-25
ºC
Uccminus=Uccplus
Switching mode :
3 level switching
copyright Vincotech
19
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Thermistor
Figure 26
Thermistor
Typical NTC characteristic
as a function of temperature
R
T = f(T)
24000
20000
16000
12000
8000
4000
0
25
50
75
100
125
T (°C)
copyright Vincotech
20
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Switching Definitions Half bridge IGBT
General conditions
Tj
=
=
=
125 °C
2 Ω
2 Ω
Rgon
Rgoff
Figure 1
Half bridge IGBT
Figure 2
Half bridge IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
150
200
IC
%
%
VCE
tdoff
150
100
50
0
VCE 90%
IC
VGE 90%
VCE
100
VGE
tEoff
tdon
50
IC 1%
VCE3%
VGE10%
IC10%
tEon
VGE
0
-50
-50
4,8
5
5,2
5,4
5,6
5,8
-0,3
0
0,3
0,6
0,9
1,2
time (us)
time(us)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
V
VGE (100%) =
VC (100%) =
IC (100%) =
V
350
591
0,37
0,93
V
350
591
0,26
0,51
V
A
A
tdoff
tEoff
=
=
μs
μs
tdon
tEon
=
=
μs
μs
Figure 3
Half bridge IGBT
Figure 4
Half bridge IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
150
200
%
Ic
%
VCE
125
fitted
150
IC
100
IC 90%
VCE
100
75
IC90%
IC 60%
tr
50
50
IC 40%
25
IC10%
0
IC10%
0
tf
-50
-25
5,1
5,2
5,3
5,4
5,5
0,1
0,2
0,3
0,4
0,5
0,6
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
350
591
0,08
V
VC (100%) =
IC (100%) =
tr =
350
591
0,06
V
A
A
μs
μs
copyright Vincotech
21
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Switching Definitions half bridge IGBT
Figure 5
Half bridge IGBT
Figure 6
Half bridge IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
120
IC
1%
%
Eon
Poff
%
Eoff
100
90
80
60
30
0
60
40
20
VGE10%
VCE3%
VGE90%
Pon
tEon
0
tEoff
-20
-30
-0,2
0
0,2
0,4
0,6
0,8
1
4,8
5
5,2
5,4
5,6
5,8
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
206,68
30,27
0,93
kW
mJ
μs
Pon (100%) =
Eon (100%) =
206,68
12,81
0,51
kW
mJ
μs
tEoff
=
tEon =
Figure 7
Neutral point FWD
Turn-off Switching Waveforms & definition of trr
120
Id
%
80
trr
40
Vd
fitted
0
I
10%
RRM
-40
IRRM 90%
IRRM 100%
-80
-120
5,2
5,3
5,4
5,5
5,6
5,7
time(us)
Vd (100%) =
Id (100%) =
IRRM (100%) =
350
V
591
A
-457
0,25
A
trr
=
μs
copyright Vincotech
22
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Switching Definitions half bridge IGBT
Figure 8
Neutral point FWD
Figure 9
Neutral point FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
125
%
Erec
%
Qrr
Id
100
75
50
25
0
100
tErec
tQrr
50
0
-50
Prec
-25
-100
5,2
5,4
5,6
5,8
6
5,15
5,3
5,45
5,6
5,75
5,9
6,05
time(us)
time(us)
Id (100%) =
Qrr (100%) =
591
A
Prec (100%) =
Erec (100%) =
206,68
10,70
0,55
kW
mJ
μs
47,04
0,55
μC
μs
tQrr
=
tErec =
copyright Vincotech
23
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
half bridge IGBT switching measurement circuit
Figure 10
copyright Vincotech
24
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Switching Definitions neutral point IGBT
General conditions
Tj
=
=
=
125 °C
2 Ω
2 Ω
Rgon
Rgoff
Figure 1
Neutral point IGBT
Figure 2
Neutral point IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
150
%
200
IC
%
125
tdoff
150
100
VCE
VGE 90%
90%
VCE
100
75
50
25
0
IC
tdon
50
tEoff
VGE
VCE 3%
VGE 10%
IC 10%
IC 1%
0
VCE
tEon
VGE
-50
-25
4,9
5
5,1
5,2
5,3
5,4
5,5
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
IC (100%) =
V
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
350
592
0,23
0,58
V
350
592
0,25
0,38
V
A
A
tdoff
tEoff
=
=
μs
μs
tdon
tEon
=
=
μs
μs
Figure 3
Neutral point IGBT
Figure 4
Neutral point IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
150
%
200
%
IC
VCE
125
fitted
150
IC
100
Ic 90%
VCE
100
50
0
75
IC 90%
Ic 60%
tr
50
Ic 40%
25
IC 10%
Ic10%
0
tf
-25
-50
0,1
0,2
0,3
0,4
0,5
5,1
5,2
5,3
5,4
5,5
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
350
V
VC (100%) =
IC (100%) =
tr =
350
V
592
A
592
A
0,067
μs
0,053
μs
copyright Vincotech
25
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Switching Definitions neutral point IGBT
Figure 5
Neutral point IGBT
Figure 6
Neutral point IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
%
125
%
IC 1%
Eoff
Eon
Poff
100
100
75
75
Pon
50
50
25
25
Uge90%
Uce 3%
Uge
10%
0
0
tEoff
tEon
-25
-25
-0,2
0
0,2
0,4
0,6
4,9
5
5,1
5,2
5,3
5,4
5,5
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
207,31
22,22
0,58
kW
mJ
μs
Pon (100%) =
Eon (100%) =
207,3054 kW
13,39
0,38
mJ
μs
tEoff
=
tEon =
Figure 7
Half bridge FWD
Turn-off Switching Waveforms & definition of trr
150
%
Id
100
trr
50
Ud
fitted
0
IRRM 10%
-50
IRRM 90%
IRRM 100%
-100
time(us)
5,6
5,1
5,2
5,3
5,4
5,5
Vd (100%) =
Id (100%) =
IRRM (100%) =
350
V
592
A
-568
0,29
A
trr
=
μs
copyright Vincotech
26
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Switching Definitions neutral point IGBT
Figure 8
Half bridge FWD
Figure 9
Half bridge FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr= integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
125
%
Erec
%
Qrr
Id
100
100
tErec
75
50
25
0
tQint
50
0
-50
Prec
-100
-25
5
5,2
5,4
5,6
5,8
5
5,2
5,4
5,6
5,8
time(us)
time(us)
Id (100%) =
Qrr (100%) =
592
A
Prec (100%) =
Erec (100%) =
207,31
14,30
0,33
kW
mJ
μs
60,53
0,33
μC
μs
tQint
=
tErec =
copyright Vincotech
27
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
neutral point IGBT switching measurement circuit
Figure 10
copyright Vincotech
28
02 Aug. 2018 / Revision 9
70-W212NMA600NB04-M200P60
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without PCM
with PCM
70-W212NMA600SC-M200P
70-W212NMA600SC-M200P-/3/
M200P
M200P
M200P
M200P-/3/
Outline
Power connections
Driver pins
Low current connections
Pin
1.1
1.2
X1
4,5
4,5
Y1
Function Group
M4
screw
M6
screw
2.1
X3
Y3 Function
X2
Y2
Function
78,7
81,6
G1-1
E1-1
G1-2
E1-2
E2-1
T1
T1
T1
T1
T2
3.1
3.2
3.3
3.4
-37 89,8
81,4 89,8
-37 65,2
81,4 65,2
DC+
DC+
CE
0
22
44
0
0
0
Phase
Phase
Phase
DC+
1.3 39,5 78,7
1.4 39,5 81,6
1.5 1,95 68,4
2.2
2.3
2.4
0
CE
110,4
1.6 4,85 68,4
1.7 39,2 68,4
G2-1
G2-2
T2
T2
3.5
3.6
-37 45,2
81,4 45,2
Phase
Phase
2.5
2.6
22 110,4
44 110,4
Neutral
DC-
1.8 42,1 68,4
E2-2
G3-1
T2
T3
3.7
3.8
-37 20,6
81,4 20,6
DC-
DC-
1.9
1.10 -2,2 48,9
1.11 46,2 46
-2,2
46
E3-1
G3-2
E3-2
E4-1
G4-1
E4-2
G4-2
T3
T3
T3
T4
T4
T4
T4
1.12 46,2 48,9
1.13 -6,75 29,2
1.14 -6,75 32,1
1.15 50,8 29,2
1.16 50,8 32,1
1.17 19,5 30,2 Desat-DC+
1.18 24,6 30,2 Desat-DC+
1.19 19,5 44,7 Desat-GND
1.20 24,6 44,7 Desat-GND
1.21 67,7 86,7
1.22 67,7 89,8
NTC
NTC
copyright Vincotech
29
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Ordering Code and Marking - Outline - Pinout
Pinout
Identification
ID
T1, T4
T2, T3
D2, D3
D1, D4
C
Component
IGBT
Voltage
1200 V
600 V
Current
600 A
600 A
600 A
600 A
Function
Buck Switch
Boost Switch
Buck Diode
Comment
IGBT
FWD
600 V
FWD
1200 V
630 V
Boost Diode
DC Link Capacitor
Thermistor
Capacitor
NTC
NTC
copyright Vincotech
30
02 Aug. 2018 / Revision 9
70-W212NMA600SC-M200P
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
Variable*
Handling instructions for VINco X4 packages see vincotech.com website.
Package data
Package data for VINco X4 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
*10 without PCM
6 with PCM
Document No.:
Date:
Modification:
Pages
4,5,13,14,15,16,
17,18,19
70-W212NMA600SC-M200P-D9-14
02 Aug. 2018
Boost dynamic characteristics corrected, NTC changed
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in
good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or
occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No
representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use
of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third
parties rights or give desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s
intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of
Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in
significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of
the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
31
02 Aug. 2018 / Revision 9
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