70-W212NMC600SH01-M700P [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 70-W212NMC600SH01-M700P |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总31页 (文件大小：1465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70ꢀW212NMC600SH01ꢀM700P
datasheet
flow MNPC 4w
1200 V / 600 A
Features
flow SCREW 4w housing
● Mixed voltage NPC
● Low inductive
● High power screw interface
Target Applications
● Solar inverter
● UPS
Schematic
● High speed motor drive
Types
● 70ꢀW212NMC600SH01ꢀM700P
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
half bridge IGBT ( T1 , T4 )
Collectorꢀemitter break down voltage
DC collector current
V CE
I C
1200
V
A
Th=80°C
Tc=80°C
457
589
Tj=Tjmax
I CRM
P tot
V GE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation
1800
A
Th=80°C
Tc=80°C
1105
1674
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
Tj≤150°C
10
µs
V
V CC
VGE=15V
800
VCE max = 1200V
Tvj max= 150°C
I cmax
T jmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
1200
175
A
°C
neutral point FWD ( D2 , D3 )
Peak Repetitive Reverse Voltage
DC forward current
V RRM
I F
I FRM
P tot
Tj=25°C
Tj=Tjmax
tP = 1 ms
Tj=Tjmax
600
V
A
Th=80°C
Tc=80°C
318
430
Tvj < 150°C
Repetitive peak forward current
Power dissipation per FWD
1800
A
Th=80°C
Tc=80°C
389
589
W
°C
T jmax
Maximum Junction Temperature
175
copyright Vincotech
1
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
neutral point IGBT ( T2 , T3 )
Collectorꢀemitter break down voltage
DC collector current
V CE
I C
600
V
A
Th=80°C
Tc=80°C
420
550
Tj=Tjmax
I CRM
P tot
V GE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation
1800
A
Th=80°C
Tc=80°C
645
977
W
V
Gateꢀemitter peak voltage
±20
t SC
Tj≤150°C
6
µs
V
Short circuit ratings
V CC
VGE=15V
360
VCE max = 1200V
I cmax
T jmax
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
1200
175
A
T
vj max= 150°C
°C
half bridge FWD ( D1 , D4 )
Peak Repetitive Reverse Voltage
DC forward current
V RRM
I F
Tj=25°C
1200
V
A
A
Th=80°C
Tc=80°C
239
316
Tj=Tjmax
I FSM
Surge forward current
1800
8100
tp=10ms , sin 180°
Tj=Tjmax
Tj=150°C
I 2
t
A2s
W
I2tꢀvalue
Th=80°C
Tc=80°C
468
709
P tot
Power dissipation per FWD
Maximum Junction Temperature
T jmax
175
°C
copyright Vincotech
2
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
DC link Capacitor
V MAX
Tcmax=100°C
Max.DC voltage
630
V
General Module Properties
Material of module baseplate
Material of internal isulation
Cu
Al2O3
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
ꢀ40…+(Tjmax ꢀ 25)
Insulation Properties
Insulation voltage
V is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
mm
mm
Clearance
Comparative tracking index
CTI
copyright Vincotech
3
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] or I C [A] or
V CE [V] or I F [A] or
V GE [V] or
V GS [V]
T j
Min
Max
V DS [V]
I D [A]
half bridge IGBT ( T1 , T4 )
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current incl. FWD
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,4
V GE(th)
V CEsat
I CES
V
CE=VGE
0,0208
600
V
V
1,4
2,22
2,75
15
0
0,08
960
1200
0
mA
nA
ꢁ
I GES
R gint
t d(on)
t r
20
1,25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
245
256
44
Rise time
54
ns
301
349
34
57
10
18
14
24
t d(off)
t f
Turnꢀoff delay time
Rgoff=0,5 ꢁ
Rgon=0,5 ꢁ
±15
350
600
Fall time
E on
Turnꢀon energy loss
mWs
pF
E off
Turnꢀoff energy loss
C ies
Input capacitance
35200
2250
1880
2775
0,09
C oss
C rss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
Q G
15
960
600
nC
R th(j-s)
R th(j-c)
PhaseꢀChange
Material
ʎ=3,4W/mK
Thermal resistance chip to heatsink
Thermal resistance chip to case
K/W
0,06
neutral point FWD ( D2 , D3 )
FWD forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,27
1,68
1,60
350
415
168
289
24
1,97
V F
I RRM
600
600
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
Q rr
Reverse recovered charge
Rgon=0,5 ꢁ
±15
350
µC
45
5978
3609
5
( di rf/dt )max
E rec
R th(j-s)
R th(j-c)
Peak rate of fall of recovery current
Reverse recovered energy
A/µs
mWs
10
PhaseꢀChange
Material
ʎ=3,4W/mK
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,24
K/W
0,16
neutral point IGBT ( T2 , T3 )
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff incl FWD
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
1,85
V GE(th) VCE=VGE
0,0096
600
V
V
1,05
1,54
1,80
V CEsat
I CES
I GES
R gint
t d(on)
t r
15
0
0,0304
2400
600
0
mA
nA
ꢁ
20
0,5
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
270
274
41
45
351
374
39
70
6
Rise time
ns
t d(off)
Turnꢀoff delay time
Rgoff=1 ꢁ
±15
350
600
Rgon=1 ꢁ
t f
Fall time
E on
E off
C ies
Turnꢀon energy loss
8
17
23
mWs
pF
Turnꢀoff energy loss
Input capacitance
36960
2304
1096
3760
0,15
C oss
C rss
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
Q G
15
480
600
nC
PhaseꢀChange
Material
R th(j-s)
Thermal resistance chip to heatsink
Thermal resistance chip to case
K/W
R th(j-c) ʎ=3,4W/mK
0,10
copyright Vincotech
4
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] or I C [A] or
V CE [V] or I F [A] or
V GE [V] or
V GS [V]
T j
Min
Max
V DS [V]
I D [A]
half bridge FWD ( D1 , D4 )
FWD forward voltage
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,15
2,15
2,7
V F
I r
600
V
ꢂA
720
Reverse leakage current
1200
350
477
599
67
I RRM
t rr
Peak reverse recovery current
Reverse recovery time
A
ns
91
19
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=1 ꢁ
±15
600
µC
33
21481
20331
4
( di rf/dt )max
A/µs
mWs
E rec
7
PhaseꢀChange
Material
R th(j-c) ʎ=3,4W/mK
R th(j-s)
Thermal resistance chip to heatsink
Thermal resistance chip to case
0,20
K/W
0,13
DC link Capacitor
C value
C
2* 0,68
22000
µF
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
R
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
ꢁ
%
Δ R/R
R100=1486 ꢁ
ꢀ12
+14
P
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B (25/100)
Bꢀvalue
K
Vincotech NTC Reference
B
Module Properties
Module inductance (from chips to PCB)
Mounting torque
LsCE
M
10
nH
Nm
Nm
Nm
g
Screw M4 ꢀ mounting according to valid application note
FSWB1ꢀ4TYꢀMꢀ*ꢀHI
Screw M5 ꢀ mounting according to valid application note
FSWB1ꢀ4TYꢀMꢀ*ꢀHI
Screw M6 ꢀ mounting according to valid application note
FSWB1ꢀ4TYꢀMꢀ*ꢀHI
2
4
2,2
6
Mounting torque
M
Terminal connection torque
Weight
M
2,5
5
G
1300
copyright Vincotech
5
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
flow SCREW 4w housing
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics Vge=15V
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
1200
1200
1000
800
600
400
200
1000
800
600
400
200
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
t p
=
t p =
350
25/125/150 °C
15
ꢂs
350
150
ꢂs
°C
T j =
T j =
V GE
=
V GE from
V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
600
1600
1400
1200
1000
800
600
400
200
0
500
400
300
200
100
0
0
0
0,5
1
1,5
2
2,5
3
2
4
6
8
10
12
VF (V)
VGE (V)
At
At
t p
=
t p
=
350
10
ꢂs
V
350
ꢂs
V CE
=
T j=
25/125/150 °C
T j=
25/125/150 °C
copyright Vincotech
6
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
50
40
30
20
10
0
125
100
75
50
25
0
Eon High T
Eon High T
Eoff High T
Eon Low T
Eoff Low T
Eon Low T
Eoff High T
Eoff Low T
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I C (A)
R
G ( Ω)
With an inductive load at
T j =
With an inductive load at
T j =
25/125/150 °C
25/125/150 °C
V CE
=
V CE
V GE
=
350
±15
0,5
V
V
ꢁ
ꢁ
350
±15
600
V
V
A
V GE
R gon
R goff
=
=
=
I C =
=
0,5
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
12
10
8
10
Erec High T
8
6
Erec High T
6
Erec Low T
4
4
2
2
Erec Low T
0
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I
C (A)
R G ( Ω)
With an inductive load at
T j =
With an inductive load at
T j =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
V CE
V GE
=
350
±15
0,5
V
V
ꢁ
350
±15
600
V
V
A
=
=
=
I C =
copyright Vincotech
7
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
10,00
1,00
tdoff
tdon
tr
1,00
tdoff
0,10
tf
tdon
0,10
tf
0,01
tr
0,01
0,00
0,00
0
2
4
6
8
10
0
200
400
600
800
1000
1200
I
C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
T j =
T j =
125
350
±15
0,5
°C
V
125
350
±15
600
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
ꢁ
ꢁ
A
=
0,5
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,4
0,3
0,3
0,2
0,2
0,1
0,1
0,0
0,7
trr High T
trr High T
0,6
0,5
0,4
0,3
0,2
0,1
trr Low T
trr Low T
0,0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
350
±15
0,5
V
V
ꢁ
350
600
±15
V
A
V
=
=
V GE =
copyright Vincotech
8
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
60
50
40
30
20
10
0
50
Qrr High T
40
30
20
10
Qrr High T
Qrr Low T
Qrr Low T
0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I C (A)
R
gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
350
±15
0,5
V
V
ꢁ
350
600
±15
V
A
V
=
=
V GE =
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
500
400
300
200
100
0
500
IRRM High T
400
300
200
100
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I
C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
350
±15
0,5
V
V
ꢁ
350
600
±15
V
A
V
=
=
V GE =
copyright Vincotech
9
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
14000
12000
10000
8000
6000
4000
2000
0
15000
dIrec/dt T
dI0/dt T
dIrec/dt T
dIo/dt T
12000
9000
6000
3000
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I
C (A)
R
gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125 °C
350
25/125 °C
350
V CE
V GE
R gon
=
V
V
ꢁ
V
=
±15
600
A
V
=
V GE =
0,5
±15
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z thJH = f(t p)
Z thJH = f(t p)
100
100
10-1
10-1
10-2
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
10-2
0,05
0,02
0,01
0,05
0,02
0,01
10-3
0,005
0.000
0,005
0.000
10-3
10-5
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
At
D =
R thJH
At
t p / T
t p / T
D =
R thJH
=
=
0,086
K/W
0,244
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
0,037
0,019
0,023
0,003
0,005
1,555
0,210
0,031
0,002
0,0003
0,046
0,048
0,046
0,074
0,018
5,114
1,051
0,196
0,043
0,014
copyright Vincotech
10
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Collector current as a
function of heatsink temperature
I C = f(T h)
2500
700
600
500
2000
1500
400
1000
500
0
300
200
100
0
0
50
100
150
200
T h
(
o C)
T h (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
15
°C
V
V GE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
750
500
400
600
300
450
200
100
0
300
150
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
11
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Buck operation
half bridge IGBT (T1,T4) and neutral point FWD (D2,D3)
Figure 25
IGBT
Figure 26
IGBT
Reverse bias safe operating area
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
1400
16
Vcc=240V
IC MAX
14
12
10
8
1200
1000
800
Vcc=960V
600
6
400
4
200
2
0
0
0
200
400
600
800
1000
1200
VCE (V)
1400
0
500
1000
1500
2000
2500
3000
Q g (nC)
At
T j =
At
I C
150
ºC
=
600
A
Uccminus=Uccplus=Ucc/2
V GE
=
=
±15
0,5
V
R gon
ꢁ
3 level
Switching mode:
copyright Vincotech
12
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 1
IGBT
Figure 2
IGBT
Typical output characteristics Vge=15V
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
1600
1600
1400
1200
1000
800
1400
1200
1000
800
600
600
400
400
200
200
0
0
0
0
1
2
3
4
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
t p
=
t p =
350
25/125/150 °C
15
ꢂs
350
150
ꢂs
°C
T j =
T j =
V GE
=
V GE from
V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical FWD forward current as
a function of forward voltage
I F = f(V F)
I C = f(V GE
)
600
1200
1000
800
600
400
200
0
500
400
300
200
100
0
0
2
4
6
8
10
12
0
1
2
3
4
5
VGE (V)
VF (V)
At
At
t p
V CE
T j =
=
t p
=
350
10
ꢂs
V
350
ꢂs
=
T j =
25/125/150 °C
25/125/150 °C
copyright Vincotech
13
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
40
30
20
10
0
100
80
60
40
20
0
Eoff High T
Eon High T
Eon Low T
Eoff Low T
Eoff High T
Eoff Low T
Eon High T
Eon Low T
0
200
400
600
800
1000
1200
0
2
4
6
8
10
R G ( Ω )
I C (A)
With an inductive load at
T j =
With an inductive load at
T j =
25/125/150 °C
25/125/150 °C
V CE
=
V CE
V GE
=
350
±15
1
V
V
ꢁ
ꢁ
350
±15
600
V
V
A
V GE
R gon
R goff
=
=
=
I C =
=
1
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
10
12
10
8
Erec High T
Erec High T
8
6
Erec Low T
6
4
4
2
2
Erec Low T
0
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
R G ( Ω )
I C (A)
With an inductive load at
T j =
With an inductive load at
T j =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
V CE
V GE
=
350
±15
1
V
V
ꢁ
350
±15
600
V
V
A
=
=
=
I C =
copyright Vincotech
14
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(I C)
Typical switching times as a
function of gate resistor
t = f(R G)
1
10
tdoff
tdon
tdoff
tdon
1
0,1
tf
tr
0,1
tf
tr
0,01
0,01
0,001
0,001
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
T j =
T j =
125
350
±15
1
°C
V
125
350
±15
600
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
V
=
I C =
ꢁ
ꢁ
A
=
1
Figure 11
FWD
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
t rr = f(R gon
)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
1,2
trr High T
1
0,8
0,6
0,4
0,2
trr High T
trr Low T
trr Low T
0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
350
±15
1
V
V
ꢁ
350
600
±15
V
A
V
=
=
V GE =
copyright Vincotech
15
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q rr = f(R gon
)
50
40
30
20
10
0
60
Qrr High T
Qrr High T
50
40
30
20
10
Qrr Low T
Qrr Low T
0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
350
±15
1
V
V
ꢁ
350
600
±15
V
A
V
=
=
V GE =
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I RRM = f(R gon
)
700
600
500
400
300
200
100
0
800
IRRM High T
IRRM Low T
600
400
200
IRRM High T
IRRM Low T
0
0
0
200
400
600
800
1000
1200
2
4
6
8
10
I C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
350
±15
1
V
V
ꢁ
350
600
±15
V
A
V
=
=
V GE =
copyright Vincotech
16
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI 0/dt ,dI rec/dt = f(R gon
)
25000
20000
15000
10000
5000
0
30000
dIrec/dt T
dI0/dt T
dIrec/dt T
dIo/dt T
25000
20000
15000
10000
5000
0
0
200
400
600
800
1000
1200
0
2
4
6
8
10
I
C (A)
R gon ( Ω)
At
At
T j =
T j =
V R =
I F =
25/125/150 °C
25/125/150 °C
V CE
V GE
R gon
=
350
±15
1
V
V
ꢁ
350
600
±15
V
A
V
=
=
V GE
=
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
FWD transient thermal impedance
as a function of pulse width
as a function of pulse width
Z thJH = f(t p)
Z thJH = f(t p)
100
100
10-1
10-2
10-3
10-1
D = 0,5
0,2
D = 0,5
10-2
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-3
102
10-5
10-4
10-3
10-2
10-1
100
101
102
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
101
At
At
t p / T
t p / T
D =
R thJH
D =
R thJH
=
=
0,15
K/W
0,20
K/W
IGBT thermal model values
FWD thermal model values
R (K/W) Tau (s)
R (K/W) Tau (s)
0,05
0,02
0,03
0,03
0,01
3,58
0,74
0,18
0,04
0,01
0,02
0,03
0,05
0,07
0,03
4,55
0,92
0,19
0,05
0,02
copyright Vincotech
17
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T h)
Collector current as a
function of heatsink temperature
I C = f(T h)
1400
1200
1000
800
600
400
200
0
700
600
500
400
300
200
100
0
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
T h
(
At
At
T j =
T j =
175
ºC
175
15
ºC
V
V GE
=
Figure 23
Power dissipation as a
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T h)
I F = f(T h)
1000
800
600
400
200
0
400
300
200
100
0
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
Th
(
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
18
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Boost operation
neutral point IGBT (T2,T3) and half bridge FWD (D1,D2)
Figure 25
IGBT
Figure 26
IGBT
Reverse bias safe operating area
Gate voltage vs Gate charge
I C = f(V CE
)
V GE = f(Q g)
1400
16
IC
MAX
14
1200
1000
800
Vcc=120V
12
10
8
Vcc=480V
600
6
400
4
200
2
0
0
0
0
500
1000
1500
2000
2500
3000
3500
4000
100
200
300
400
500
600
700
Q g (nC)
VCE (V)
At
At
T j =
25,150
ºC
I C
=
600
A
Uccminus=Uccplus=Ucc/2
VGE =
±15
1
V
Rgon =
ꢁ
copyright Vincotech
19
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
50
75
100
125
T (°C)
copyright Vincotech
20
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Switching Definitions Half Bridge
General conditions
T j
=
=
=
125 °C
0,5 ꢁ
0,5 ꢁ
R gon
R goff
Figure 1
Half Bridge IGBT
Figure 2
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on
)
150
200
VCE
%
IC
%
125
tdoff
150
100
75
50
25
0
VGE 90%
VCE
IC
100
VGE
VGE
tdon
VCE 90%
50
tEoff
VCE 3%
VGE10%
IC10%
IC 1%
0
tEon
-50
-25
3,8
4
4,2
4,4
4,6
4,8
0
0,2
0,4
0,6
0,8
1
time (us)
time(us)
V GE (0%) =
ꢀ15
15
V
V GE (0%) =
ꢀ15
15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
700
594
V
700
594
V
A
A
t doff
=
=
0,349
0,767
ꢂs
ꢂs
t don
=
=
0,256
0,572
ꢂs
ꢂs
t E off
t E on
Figure 3
Half Bridge IGBT
Figure 4
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
150
175
%
Ic
%
VCE
150
125
fitted
IC
125
100
75
50
25
0
VCE
IC 90%
100
IC90%
75
IC 60%
IC 40%
tr
50
25
IC10%
IC
10%
0
tf
-25
-25
4,1
4,2
4,3
4,4
4,5
4,6
0,3
0,4
0,5
0,6
0,7
0,8
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
700
594
V
V C (100%) =
I C (100%) =
t r =
700
594
V
A
A
0,057
ꢂs
0,054
ꢂs
copyright Vincotech
21
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Switching Definitions Half Bridge
Figure 5
Half Bridge IGBT
Figure 6
Half Bridge IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
125
125
%
IC
%
Eon
1%
Poff
100
100
Eoff
75
50
75
50
25
0
25
VGE90%
VCE3%
VGE10%
Pon
0
tEoff
tEon
-25
-25
0
0,2
0,4
0,6
0,8
1
3,8
4
4,2
4,4
4,6
4,8
time (us)
time(us)
P off (100%) =
E off (100%) =
415,88
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
415,88
17,53
0,572
kW
mJ
ꢂs
24,11
0,767
t E off
=
t E on =
Figure 7
Neutral Point FWD
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Vd
fitted
0
-50
I
10%
RRM
IRRM 90%
IRRM 100%
-100
4,2
4,3
4,4
4,5
4,6
4,7
4,8
time(us)
V d (100%) =
I d (100%) =
700
594
ꢀ415
V
A
I RRM (100%) =
t rr
A
=
0,289
ꢂs
copyright Vincotech
22
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Switching Definitions Half Bridge
Figure 8
Neutral Point FWD
Figure 9
Neutral Point FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Q rr = integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
125
%
%
Erec
Id
Qrr
100
75
100
tErec
tQrr
50
50
0
-50
25
Prec
0
-25
-100
4,2
4,4
4,6
4,8
5
5,2
4,1
4,3
4,5
4,7
4,9
5,1
time(us)
time(us)
I d (100%) =
Q rr (100%) =
594
A
P rec (100%) =
E rec (100%) =
415,88
10,16
0,67
kW
mJ
ꢂs
45,49
0,67
ꢂC
ꢂs
t Q rr
=
t E rec =
copyright Vincotech
23
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Half Bridge switching measurement circuit
Figure 10
copyright Vincotech
24
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Switching Definitions Neutral Point
General conditions
T j
=
=
=
125 °C
1 ꢁ
1 ꢁ
flow SCREW 4w housing
R gon
R goff
Figure 1
Neutral Point IGBT
Figure 2
Neutral Point IGBT
Turnꢀoff Switching Waveforms & definition of t doff, t Eoff
Turnꢀon Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
150
%
200
IC
%
125
tdoff
150
100
VGE 90%
VCE
90%
VCE
100
75
IC
VGE
tdon
50
50
tEoff
VGE
25
VCE 3%
VGE 10%
IC 10%
IC 1%
0
VCE
tEon
0
-50
-25
3,9
4
4,1
4,2
4,3
4,4
4,5
4,6
0
0,2
0,4
0,6
0,8
1
time (us)
time(us)
V GE (0%) =
ꢀ15
15
V
V GE (0%) =
ꢀ15
V
V GE (100%) =
V C (100%) =
I C (100%) =
V
V GE (100%) =
V C (100%) =
I C (100%) =
15
V
350
583
0,23
0,58
V
350
583
0,274
0,38
V
A
A
t doff
=
=
ꢂs
ꢂs
t don
=
=
ꢂs
ꢂs
t E off
t E on
Figure 3
Neutral Point IGBT
Figure 4
Neutral Point IGBT
Turnꢀoff Switching Waveforms & definition of t f
Turnꢀon Switching Waveforms & definition of t r
150
200
IC
%
VCE
%
125
fitted
150
IC
100
75
50
25
0
Ic 90%
VCE
100
IC 90%
Ic 60%
Ic 40%
tr
50
IC 10%
Ic10%
0
tf
-25
-50
0,3
0,4
0,5
0,6
0,7
0,8
4,1
4,2
4,3
4,4
4,5
4,6
time (us)
time(us)
V C (100%) =
I C (100%) =
t f =
350
583
0,07
V
V C (100%) =
I C (100%) =
t r =
350
583
V
A
A
ꢂs
0,045
ꢂs
copyright Vincotech
25
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Switching Definitions Neutral Point
Figure 5
Neutral Point IGBT
Figure 6
Neutral Point IGBT
Turnꢀoff Switching Waveforms & definition of t Eoff
Turnꢀon Switching Waveforms & definition of t Eon
125
%
125
%
IC 1%
Eon
Poff
Eoff
100
100
75
75
Pon
50
50
25
25
Uge90%
Uce 3%
Uge
10%
0
0
tEoff
tEon
-25
-25
0
0,2
0,4
0,6
0,8
1
3,9
4
4,1
4,2
4,3
4,4
4,5
time (us)
time(us)
P off (100%) =
E off (100%) =
203,90
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
203,8995 kW
23,39
0,58
13,39
0,38
mJ
ꢂs
t E off
=
t E on =
Figure 7
Half Bridge FWD
Turnꢀoff Switching Waveforms & definition of t rr
150
%
Id
100
trr
50
Ud
fitted
IRRM 10%
0
-50
IRRM 90%
IRRM 100%
-100
4,2
4,3
4,4
4,5
4,6
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
350
V
583
A
ꢀ545
0,09
A
t rr
=
ꢂs
copyright Vincotech
26
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Switching Definitions Neutral Point
Figure 8
Half Bridge FWD
Figure 9
Half Bridge FWD
Turnꢀon Switching Waveforms & definition of t Qrr
(t Qrr= integrating time for Q rr)
Turnꢀon Switching Waveforms & definition of t Erec
(t Erec= integrating time for E rec
)
150
150
%
%
Erec
Qrr
125
Id
100
100
tQint
50
tErec
75
50
0
-50
25
Prec
0
-100
-25
4,2
4,3
4,4
4,5
4,6
4,7
4,8
4,2
4,3
4,4
4,5
4,6
4,7
4,8
time(us)
time(us)
I d (100%) =
Q rr (100%) =
583
A
P rec (100%) =
E rec (100%) =
203,90
7,18
kW
mJ
ꢂs
31,59
0,33
ꢂC
ꢂs
t Qint
=
t E rec
=
0,33
copyright Vincotech
27
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Neutral Point switching measurement circuit
Figure 10
copyright Vincotech
28
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Ordering Code and Marking ꢀ Outline ꢀ Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
Standard
70ꢀW212NMC600SH01ꢀM700P
M700P
M700P
Outline
Driver pins
Y1 Function Group
ꢀ0,2 81,6
2,8 81,6
Low current connections
Power connections
Pin
1.1
1.2
X1
M4
screw
M6
screw
2.1
X3
Y3 Function
X2
Y2
Function
G1ꢀ1
E1ꢀ1
G1ꢀ2
E1ꢀ2
E2ꢀ1
T1
T1
T1
T1
T2
3.1
3.2
3.3
3.4
ꢀ37 89,8
ꢀ37 89,8
TR+
DC+
0
22
44
0
0
0
Phase
Phase
Phase
DC+
1.3 44,2 81,6
1.4 41,2 81,6
1.5 1,85 68,5
2.2
ꢀ37 89,8 Neutral
81,4 89,8 TR+
81,4 89,8 Neutral
2.3
2.4
0
110,4
1.6 4,85 67,5
1.7 42,2 68,5
G2ꢀ1
E2ꢀ2
T2
T2
3.5
3.6
2.5
2.6
22 110,4
44 110,4
Neutral
DCꢀ
81,4 89,8
DC+
1.8 39,2 67,5
G2ꢀ2
G3ꢀ1
E3ꢀ1
G3ꢀ2
E3ꢀ2
E4ꢀ1
G4ꢀ1
E4ꢀ2
G4ꢀ2
T2
T3
T3
T3
T3
T4
T4
T4
T4
3.7
3.8
3.9
ꢀ37 65,2
CE
1.9
ꢀ5,4 46,6
ꢀ37 65,2 Neutral
81,4 65,2 CE
1.10 ꢀ5,4 49,6
1.11 49,4 46,6
1.12 49,4 49,6
1.13 ꢀ3,45 30,7
1.14 ꢀ0,45 30,7
1.15 47,5 30,7
1.16 44,5 30,7
3.10 81,4 65,2 Neutral
3.11
ꢀ37 45,2
ꢀ37 45,2 Neutral
Phase
3.14 81,4 45,2 Neutral
Phase
3.12
3.13 81,4 45,2
3.15
3.16
3.17
ꢀ37 20,6
ꢀ37 20,6
DCꢀ
TRꢀ
1.17 19,5
1.18 24,6
16 DesatꢀDC+
16 DesatꢀDC+
ꢀ37 20,6 Neutral
DCꢀ
3.19 81,4 20,6 Neutral
3.20 81,4 20,6 TRꢀ
1.19 19,5 50,8 DesatꢀGND
1.20 24,6 50,8 DesatꢀGND
1.21 67,7 86,7
1.22 67,7 89,8
3.18 81,4 20,6
NTC
NTC
copyright Vincotech
29
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
Ordering Code and Marking ꢀ Outline ꢀ Pinout
flow SCREW 4w housing
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T1,T4
IGBT
1200V
600A
Half Bridge Switch
D1,D4
T2,T3
D2,D3
NTC
FWD
IGBT
FWD
NTC
1200V
600V
600V
ꢀ
300A
600A
600A
ꢀ
Half Bridge Diode
Neutral Point Switch
Neutral Point Diode
Thermistor
copyright Vincotech
30
31 Jul. 2015 / Revision 2
70ꢀW212NMC600SH01ꢀM700P
datasheet
flow SCREW 4w housing
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are
presented by Vincotech to reader in good faith, are believed to be accurate and reliable, but may well be incomplete
and/or not applicable to all conditions or situations that may exist or occur. Vincotech reserves the right to make any
changes without further notice to any products to improve reliability, function or design. No representation, guarantee
or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application
or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or
that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and
determine the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the
express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labelling can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
31
31 Jul. 2015 / Revision 2
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