80-M1126PA035M7-K210F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M1126PA035M7-K210F7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总17页 (文件大小：1671K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M1126PA035M7-K210F70
datasheet
MiniSkiiP®PACK 1
Features
1200 V / 35 A
MiniSkiiP® 1 housing
V
● IGBT M7 with low
and improved
CEsat
EMC behavior
● Built-in PTC
● Solder-free spring contact technology
● Open emitter configuration
Schematic
Target applications
● Industrial Drives
Types
● 80-M1126PA035M7-K210F70
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
35
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
A
129
±20
175
W
V
Maximum junction temperature
°C
Copyright Vincotech
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80-M1126PA035M7-K210F70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
35
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
70
A
Tj = Tjmax
89
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
6,3
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
V
Creepage distance
Clearance
mm
mm
For more information see handling instructions
With std lid
6,3
For more information see handling instructions
Comparative Tracking Index
*100% tested in production
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0035 25
25
5,4
6
6,6
V
V
1,48
1,64
1,68
1,75
Collector-emitter saturation voltage
VCEsat
15
35
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
0,08
0,5
mA
µA
Ω
20
none
8000
280
95
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
35
300
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,73
K/W
Dynamic
25
124
122
121
td(on)
125
150
25
Turn-on delay time
14
tr
Rise time
125
150
25
17
18
179
Rgoff = 8 Ω
Rgon = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
203
208
95
118
±15
600
35
tf
119
1,450
1,924
2,088
2,395
3,173
3,417
Qr
FWD
Qr
FWD
Qr
FWD
= 4,3 μC
= 6,2 μC
= 6,9 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,66
1,76
1,75
2,1
40
VF
IR
Forward voltage
35
125
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,06
K/W
Dynamic
25
77
IRRM
125
150
25
76
77
157
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
284
311
ns
di/dt = 2681 A/μs
di/dt = 2670 A/μs ±15
di/dt = 2690 A/μs
4,335
6,177
6,898
1,959
2,817
3,128
2734
2205
2101
600
35
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
R
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
A(25/50)
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,73
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,73E-02
5,12E-02
1,36E-01
3,93E-01
7,33E-02
4,92E-02
3,39E-03
5,47E+00
4,66E-01
8,32E-02
2,78E-02
5,41E-03
8,30E-04
4,01E-04
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Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,06
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,96E-02
7,42E-02
1,97E-01
5,70E-01
1,06E-01
7,13E-02
4,92E-03
7,93E+00
6,75E-01
1,21E-01
4,03E-02
7,84E-03
1,20E-03
5,81E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical PTC characteristic
Thermistor
as a function of temperature
R = f(T)
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datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
:
600
±15
35
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
8
°C
V
150
600
±15
35
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
V
V
A
25 °C
125 °C
150 °C
±15
8
:
Tj
VGE
I C
=
±15
35
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
600
±15
35
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
600
±15
35
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
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datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
±15
8
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
8
8
Ω
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
General conditions
=
=
=
125 °C
8 Ω
T j
Rgon
R goff
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
tEoff
VCE
VGE
VCE
tEon
-15
VGE (0%) =
-15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
35
V
600
35
V
A
A
0,203
0,739
μs
μs
0,122
0,372
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
VCE
tr
tf
IC
600
35
V
A
600
35
V
A
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
0,118
μs
0,017
μs
tr
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
20,99
3,17
0,74
kW
mJ
μs
P on (100%) =
Eon (100%) =
20,99
1,92
0,37
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
V
35
A
-76
0,284
A
μs
t rr
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Erec
tErec
Prec
35
A
20,99
2,82
0,58
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
6,18
0,58
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
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datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
Ordering Code
80-M1126PA035M7-K210F70-/0A/
80-M1126PA035M7-K210F70-/0B/
80-M1126PA035M7-K210F70-/1A/
80-M1126PA035M7-K210F70-/1B/
80-M1126PA035M7-K210F70-/4A/
80-M1126PA035M7-K210F70-/4B/
80-M1126PA035M7-K210F70-/5A/
80-M1126PA035M7-K210F70-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
Outline
Pin table [mm]
Pin
1
X
Y
Function
15,93 -14,6
G16
Ph3
Ph3
2
15,93
15,93
-9,8
-5
3
4
Not assembled
5
15,93
7,62
G15
6
15,93 12,62
Therm1
Therm2
7
15,93
15,8
8
Not assembled
9
8,23
8,23
7,73
12,62
15,8
DC-3
DC-3
G14
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
-14,6
Not assembled
Not assembled
0,53
0,53
0,53
9,45
12,62
15,8
G13
DC-2
DC-2
Ph2
-0,47 -14,6
-0,47 -9,8
Ph2
Not assembled
Not assembled
-7,17 12,62
-7,17 15,8
-8,07 -14,6
-8,07 -9,8
DC-1
DC-1
DC+
DC+
G12
-15,02 -15,8
-15,02 -9,8
Ph1
-15,02
0
Ph1
Not assembled
-15,02 15,8
G11
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
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datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
IGBT
1200 V
35 A
35 A
Inverter Switch
Inverter Diode
Thermistor
D11, D12, D13, D14,
D15, D16
FWD
PTC
1200 V
Rt
Copyright Vincotech
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datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 120
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 1 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M1126PA035M7-K210F70-D1-14
14 Nov. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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相关型号：
80-M112PMA010M7-K209A7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M112PMA015M7-K200A7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M112PMA025M7-K200A8
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M2122PA150M7-K708F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M2122PA150SC-K708F4
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M2122PA200M7-K709F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M2122PA200SC-K709F4
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M2122PA200SC01-K709F42
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M2122PA200SC02-K709F45
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M2122PA300M7-K700F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M2126PA035M7-K717F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M2126PA050M7-K718F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
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