80-M112PMA010M7-K209A7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M112PMA010M7-K209A7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总32页 (文件大小：2827K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M112PMA010M7-K209A70
datasheet
MiniSKiiP® PIM 1
1200 V / 10 A
MiniSkiip® 1 housing
Features
● IGBT M7 with low V CEsat and improved EMC behavior
● Open emitter configuration
● Solder-free spring contact technology
● Built-in PTC
Schematic
Target applications
● Industrial Drives
Types
● 80-M112PMA010M7-K209A70
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1600
35
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
200
200
51
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
150
Copyright Vincotech
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80-M112PMA010M7-K209A70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
14
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
20
A
67
W
V
±20
175
Maximum junction temperature
°C
Inverter Diode
Peak repetitive reverse voltage
VRRM
IF
IFRM
Ptot
1200
14
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
20
A
Tj = Tjmax
53
W
°C
Maximum junction temperature
Tjmax
175
Brake Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
14
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
20
A
67
W
V
±20
175
Maximum junction temperature
°C
Brake Diode
Peak repetitive reverse voltage
VRRM
IF
IFRM
Ptot
1200
14
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
20
A
Tj = Tjmax
53
W
°C
Maximum junction temperature
Tjmax
175
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
6,3
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
V
Creepage distance
Clearance
mm
mm
For more information see handling instructions
With std lid
6,3
For more information see handling instructions
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,22
1,21
1,75
Forward voltage
Reverse leakage current
Thermal
VF
Ir
25
V
125
25
50
1600
145
µA
1100
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,37
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,001
10
25
5,4
6
6,6
V
V
25
1,65
1,90
1,95
1,95
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
55
µA
nA
Ω
20
500
none
2000
86
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
23
15
600
10
80
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,41
K/W
Dynamic
25
128
126
123
td(on)
125
150
25
Turn-on delay time
29
tr
Rise time
125
150
25
32
34
145
Rgoff = 32 Ω
Rgon = 32 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
179
182
98
108
±15
600
10
tf
117
0,883
1,125
1,189
0,656
0,860
0,908
Qr
FWD
Qr
FWD
Qr
FWD
= 1,1 μC
= 1,7 μC
= 1,8 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,61
1,69
1,69
2,1
25
VF
IR
125
150
Forward voltage
10
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,80
K/W
Dynamic
25
9
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
9
9
Peak recovery current
A
254
373
409
1,088
1,664
1,808
0,374
0,620
0,680
85
trr
Qr
Reverse recovery time
ns
di/dt = 278 A/μs
di/dt = 270 A/μs
di/dt = 272 A/μs
±15
600
10
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
54
49
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,001
10
25
5,4
6
6,6
V
V
25
1,65
1,90
1,95
1,95
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
55
µA
nA
Ω
20
500
none
2000
86
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
23
15
600
10
80
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,41
K/W
Dynamic
25
72
68
68
td(on)
125
150
25
Turn-on delay time
46
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
50
50
Rgoff = 32 Ω
Rgon = 32 Ω
ns
225
251
257
93
111
113
0,973
1,253
1,332
0,647
0,863
0,916
td(off)
Turn-off delay time
Fall time
15/0
600
10
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1 μC
= 1,6 μC
= 1,8 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
1,61
1,69
1,69
2,1
25
VF
IR
125
150
Forward voltage
10
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,80
K/W
Dynamic
25
7
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
8
8
Peak recovery current
A
265
396
448
0,989
1,568
1,773
0,337
0,577
0,666
59
trr
Qr
Reverse recovery time
ns
di/dt = 165 A/μs
di/dt = 148 A/μs 15/0
di/dt = 153 A/μs
600
10
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
41
35
Thermistor
Rated resistance
R
ΔR/R
R
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
A(25/50)
7,635*10-3
1,731*10-5
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
tp / T
1,37
T j:
K/W
Diode thermal model values
R (K/W)
τ
(s)
6,75E-02
1,34E-01
6,34E-01
3,25E-01
1,24E-01
8,72E-02
8,72E-02
1,56E+00
2,41E-01
4,40E-02
9,85E-03
2,12E-03
3,56E-04
3,56E-04
Copyright Vincotech
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27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,41
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,61E-02
1,81E-01
5,32E-01
3,21E-01
1,59E-01
1,49E-01
1,89E+00
2,00E-01
4,93E-02
1,08E-02
2,58E-03
4,46E-04
Copyright Vincotech
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27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
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27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,80
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,72E-02
2,38E-01
9,04E-01
3,13E-01
1,25E-01
1,19E-01
1,16E+00
1,67E-01
4,46E-02
8,53E-03
2,30E-03
3,66E-04
Copyright Vincotech
12
27 Oct. 2017 / Revision 1
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datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,41
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,61E-02
1,81E-01
5,32E-01
3,21E-01
1,59E-01
1,49E-01
1,89E+00
2,00E-01
4,93E-02
1,08E-02
2,58E-03
4,46E-04
Copyright Vincotech
13
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
14
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,80
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,72E-02
2,38E-01
9,04E-01
3,13E-01
1,25E-01
1,19E-01
1,16E+00
1,67E-01
4,46E-02
8,53E-03
2,30E-03
3,66E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical PTC characteristic
as a function of temperature
R = f(
Thermistor
T
)
Copyright Vincotech
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27 Oct. 2017 / Revision 1
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datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
32
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
10
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
32
V
V
Ω
:
600
±15
10
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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27 Oct. 2017 / Revision 1
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datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
32
°C
V
150
600
±15
10
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
At
VCE
=
600
±15
32
V
V
Ω
25 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
:
Tj
125 °C
150 °C
±15
10
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
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27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
32
V
V
Ω
25 °C
125 °C
150 °C
600
±15
10
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
600
±15
32
V
V
Ω
25 °C
125 °C
150 °C
600
±15
10
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
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27 Oct. 2017 / Revision 1
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datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF
/
dt
diF/dt
t
t
t
t
t
t
t
t
di
rr/dt
dir r
/dt
i
i
i
i
i
i
i
i
25 °C
At
VCE
=
600
V
V
Ω
At
VCE
VGE
I C
=
600
±15
10
V
V
A
25 °C
125 °C
150 °C
±15
32
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
32
32
Ω
Copyright Vincotech
19
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
32 Ω
T j
Rgon
R goff
32 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VCE
VGE
tEoff
VCE
tEon
-15
VGE (0%) =
-15
15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
10
V
600
10
V
A
A
0,179
0,737
μs
μs
0,126
0,493
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
tf
VCE
600
10
V
600
10
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
0,108
μs
0,032
μs
tr
=
Copyright Vincotech
20
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Pon
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
6,02
0,86
0,74
kW
mJ
μs
P on (100%) =
Eon (100%) =
6,02
1,13
0,49
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
10
V
A
-9
A
0,373
μs
t rr
=
Copyright Vincotech
21
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Erec
tErec
Prec
10
A
6,02
0,62
1,00
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
1,66
1,00
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
22
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
With an inductive load at
With an inductive load at
600
15/0
32
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
15/0
10
V
V
A
Tj:
125 °C
150 °C
VCE
VGE
=
=
=
=
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
15/0
32
V
V
Ω
:
600
15/0
10
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
23
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
15/0
32
°C
V
150
600
15/0
10
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
600
V
V
25 °C
125 °C
150 °C
At
VCE
=
600
15/0
10
V
V
A
25 °C
15/0
32
:
Tj
VGE
I C
=
:
Tj
125 °C
150 °C
VGE
R gon
=
=
Ω
=
Copyright Vincotech
24
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
600
15/0
32
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
15/0
10
:
125 °C
150 °C
=
=
Tj
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
600
600
15/0
32
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
At
VCE
=
At
VCE =
:
Tj
15/0
10
:
125 °C
150 °C
VGE
=
=
VGE
I C
=
Tj
R gon
=
Copyright Vincotech
25
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
dirr/dt
i
i
i
i
dir r
/dt
i
i
i
i
25 °C
At
VCE
=
600
V
V
Ω
At
VCE
VGE
I C
=
600
V
V
A
25 °C
125 °C
150 °C
15/0
32
:
Tj
125 °C
150 °C
15/0
10
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
32
32
Ω
Copyright Vincotech
26
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switching Definitions
General conditions
=
=
=
125 °C
32 Ω
T j
Rgon
R goff
32 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
VCE
IC
VGE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
600
10
V
600
10
V
V
A
A
0,251
0,853
μs
μs
0,068
0,458
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
600
600
V
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
10
A
10
A
0,111
μs
0,050
μs
tr
=
Copyright Vincotech
27
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Poff
Eon
Pon
tEoff
tEon
P off (100%) =
Eoff (100%) =
6,03
0,86
0,85
kW
mJ
μs
P on (100%) =
Eon (100%) =
6,03
kW
mJ
μs
1,25
0,46
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
10
V
A
-8
A
0,396
μs
t rr
=
Copyright Vincotech
28
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Brake Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Erec
tErec
Prec
10
A
6,03
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
1,57
1,00
μC
μs
0,58
1,00
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
29
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
Ordering Code
80-M112PMA010M7-K209A70-/0A/
80-M112PMA010M7-K209A70-/0B/
80-M112PMA010M7-K209A70-/1A/
80-M112PMA010M7-K209A70-/1B/
80-M112PMA010M7-K209A70-/4A/
80-M112PMA010M7-K209A70-/4B/
80-M112PMA010M7-K209A70-/5A/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
80-M112PMA010M7-K209A70-/5B/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
PCB pad table
Pin
1
X
Y
Function
G16
15,93 -14,6
2
15,93
-9,8
Ph3
3
Not assembled
4
15,93
15,93
-0,2
7,62
Therm1
5
Therm2
G15
6
15,93 12,62
7
15,93
15,8
DC-3
8
Not assembled
9
8,23
12,62
G13
10
11
12
8,23
7,73
7,73
15,8
-14,6
-9,8
DC-2
G14
Ph2
13
14
15
16
17
18
19
20
21
22
Not assembled
Not assembled
0,53
0,53
12,62
15,8
G11
DC-1
G12
-0,47 -14,6
-0,47
-5,47
-5,47
-9,8
-5
Ph1
DC+Br
Br
5,35
-7,17 12,62
G27
-7,17
15,8
DC-Br
23
24
Not assembled
-9,8 DC+Inv
-8,07
25 -15,02 -15,8
26 -15,02 -9,8
DC+Rect
ACIn3
27 -15,02
28 -15,02
0
ACIn2
9,8
ACIn1
29 -15,02 15,8
DC-Rect
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
30
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31 , D32 , D33 ,
D34 , D35 , D36
Rectifier
1600 V
25 A
10 A
10 A
Rectifier Diode
Inverter Switch
Inverter Diode
T11 , T12 , T13 ,
T14 , T15 , T16
IGBT
FWD
1200 V
1200 V
D11 , D12 , D13 ,
D14 , D15 , D16
T27
D27
Rt
IGBT
FWD
PTC
1200 V
1200 V
10 A
10 A
Brake Switch
Brake Diode
Thermistor
Copyright Vincotech
31
27 Oct. 2017 / Revision 1
80-M112PMA010M7-K209A70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 120
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 1 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M112PMA010M7-K209A70-D1-14
27 Oct. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
27 Oct. 2017 / Revision 1
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