SI2351DS-T1-GE3 [VISHAY]
Trans MOSFET P-CH 20V 2.2A 3-Pin SOT-23 T/R;
| 型号： | SI2351DS-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Trans MOSFET P-CH 20V 2.2A 3-Pin SOT-23 T/R 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si2351DS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
MOSFET PRODUCT SUMMARY
•
•
•
•
Halogen-free Option Available
TrenchFET® Power MOSFET
PWM Optimized
D (A)a
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
0.115 at VGS = - 4.5 V
0.205 at VGS = - 2.5 V
- 3.0
RoHS
- 20
3.2 nC
COMPLIANT
100 % Rg Tested
- 2.2
TO-236
(SOT-23)
G
S
1
2
3
D
Top View
Si2351DS (G1)*
* Marking Code
Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free)
Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
Unit
VDS
VGS
- 20
12
Drain-Source Voltage
Gate-Source Voltage
V
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
- 2.8
- 2.4
- 2.2b, c
- 1.8b, c
- 10
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
- 2.0
- 0.91b, c
2.1
Continuous Source-Drain Diode Current
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
1.5
PD
Maximum Power Dissipation
W
1.0b, c
0.7b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Typical
90
Maximum
Symbol
RthJA
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
≤ 5 s
Steady State
115
75
°C/W
RthJF
60
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
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1
Si2351DS
Vishay Siliconix
MOSFET SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS = 0 V, ID = - 250 µA
Drain-Source Breakdown Voltage
- 20
V
V
DS Temperature Coefficient
ΔVDS/TJ
- 16.7
2.1
mV/°C
ID = - 250 µA
VGS(th) Temperature Coefficient
Δ
V
/T
GS(th) J
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
- 0.6
- 10
- 1.5
100
- 1
V
VDS = 0 V, VGS
=
12 V
nA
VDS = - 20 V, VGS = 0 V
DS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS ≥ - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 2.4 A
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
0.092
0.164
5.5
0.115
0.205
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = - 2.5 V, ID = - 1.8 A
VDS = - 10 V, ID = - 2.4 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
250
80
V
DS = - 10 V, VGS = 0 V, f = 1 MHz
pF
55
V
DS = - 10 V, VGS = - 5.0 V, ID = - 2.4 A
3.4
3.2
0.5
1.4
8.5
9
5.1
5
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
VDS = - 10 V, VGS = - 4.5 V, ID = - 2.4 A
f = 1 MHz
Gate Resistance
13
14
45
48
24
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
30
VDD = - 10 V, RL = 5.26 Ω
ns
ID ≅ - 1.9 A, VGEN = - 4.5 V, RG = 1 Ω
Turn-Off Delay Time
32
Fall Time
16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = - 2.0 A
- 2.0
- 10
- 1.2
26
A
Pulse Diode Forward Currenta
Body Diode Voltage
- 0.8
17
5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
8
IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C
14
3
ns
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73702
S-80642-Rev. C, 24-Mar-08
Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
4
3
2
1
0
V
GS
= 5 thru 3 V
8
6
4
2
0
V
GS
= 2.5 V
V
GS
= 2 V
T
C
= 25 °C
T
C
= 125 °C
V
= 1.5 V
GS
T
C
= - 55 °C
2.0
0
1
2
3
4
0.0
0.5
1.0
1.5
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.30
0.25
0.20
0.15
0.10
0.05
0.00
500
400
300
200
100
0
V
GS
= 2.5 V
C
iss
V
GS
= 4.5 V
C
oss
C
rss
0
2
4
6
8
10
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 3.0 A
V = 4.5 V, I = 2.4 A
GS D
4
3
2
1
0
V
DS
= 10 V
V
GS
= 2.5 V, I = 1.8 A
D
V
DS
= 16 V
0
1
2
3
4
- 50 - 25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
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Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.36
0.28
0.20
0.12
0.04
10
I
D
= 2.4 A
T
A
= 150 °C
T
A
= 25 °C
1
T
= 125 °C
A
T
A
= 25 °C
4
0.1
0.00
1
2
3
5
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
8
T
= 25 °C
A
6
4
2
0
Single Pulse
I
D
= 250 µA
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
- Temperature (°C)
Time (s)
Single Pulse Power
J
Threshold Voltage
100
Limited by R
DS(on)*
10
10 ms
1
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single Pulse
0.01
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R
is specified
DS(on)
GS
Safe Operating Area
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Document Number: 73702
S-80642-Rev. C, 24-Mar-08
Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
2.4
1.8
1.2
0.6
0.0
3
2
1
0
0
25
50
75
100
125
150
0
25
50
T - Case Temperature (°C)
C
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
www.vishay.com
5
Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
0.02
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 130 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73702
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Document Number: 73702
S-80642-Rev. C, 24-Mar-08
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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