SUB70N04-10-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUB70N04-10-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.009 @ V = 10 V
70
GS
30
0.013 @ V = 4.5 V
GS
60
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D
Top View
SUP70N03-09BP
S
S
N-Channel MOSFET
SUB70N03-09BP
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"20
b
T
= 25_C
= 100_C
70
C
Continuous Drain Current (T = 175_C)
I
J
D
T
50
200
30
C
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
a
Repetitive Avalanche Energy
L = 0.1 mH
E
61
mJ
W
AR
b
Power Dissipation
T
= 25_C
P
93
C
D
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
PCB Mount (TO-263)
40
62.5
1.6
Junction-to-Ambient
Junction-to-Case
R
R
thJA
Free Air (TO-220AB)
_C/W
thJC
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71229
S-20102—Rev. B, 11-Mar-02
www.vishay.com
1
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
30
0.8
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
V
2.0
GS DS
GS(th)
V
DS
= 0 V, V = "20 V
I
"100
1
nA
GS
GSS
V
DS
= 24 V, V = 0 V
GS
V
V
= 24 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 24 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
70
20
A
D(on)
GS
V
GS
= 10 V, I = 30 A
0.007
0.009
0.0135
0.017
0.013
D
V
V
= 10 V, I = 30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 30 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 20 A
0.010
45
D
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
S
D
Dynamicb
Input Capacitance
C
1500
530
240
15.5
5
iss
Output Capacitance
C
oss
V
= 0 V, V = 25 V, f = 1 MHz
pF
nC
GS DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
19
g
c
Gate-Source Charge
Q
Q
V
= 15 V, V = 5 V, I = 70 A
gs
gd
DS
GS
D
c
Gate-Drain Charge
6
c
Turn-On Delay Time
t
10
8
18
15
45
16
d(on)
c
Rise Time
t
r
V
= 15 V, R = 0.21 W
L
DD
ns
c
Turn-Off Delay Time
t
25
9
I
D
] 70 A, V
= 10 V, R = 2.5 W
GEN G
d(off)
c
Fall Time
t
f
Gate Resistance
R
g
2
W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
70
200
1.5
60
S
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 70 A, V = 0 V
1.1
30
V
GS
Reverse Recovery Time
t
rr
I
F
= 70 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71229
www.vishay.com
S-20102—Rev. B, 11-Mar-02
2
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
200
150
100
50
V
GS
= 10 thru 6 V
T
= –55_C
C
160
120
80
40
0
5 V
25_C
4 V
125_C
3 V
1, 2 V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0
0.025
0.020
0.015
0.010
0.005
0.000
T
= –55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
2400
2000
1600
1200
800
400
0
10
8
V
= 15 V
= 70 A
DS
I
D
C
iss
6
4
C
oss
C
rss
2
0
0
6
12
18
24
30
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71229
www.vishay.com
S-20102—Rev. B, 11-Mar-02
3
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
= 10 V
= 30 A
GS
I
D
1.6
1.2
0.8
0.4
0.0
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
J
SD
Drain-Source Voltage Breakdown
vs. Junction Temperature
45
I
D
= 250 mA
40
35
30
25
–50 –25
0
25
50
75 100 125 150 175
T
– Junction Temperature (_C)
J
Document Number: 71229
www.vishay.com
S-20102—Rev. B, 11-Mar-02
4
SUP/SUB70N03-09BP
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
80
60
40
20
0
Limited
by r
DS(on)
10 ms
100
10
1
100 ms
1 ms
10 ms
100 ms
dc
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 71229
www.vishay.com
S-20102—Rev. B, 11-Mar-02
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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