SUB75N08-09L-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUB75N08-09L-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总5页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
SUP/SUB75N08-09L
New Product
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
0.009 @ V = 10 V
GS
a
75
"75
0.011 @ V = 4.5 V
GS
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB75N08-09L
Top View
N-Channel MOSFET
SUP75N08-09L
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
75
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
GS
V
V
"20
a
T
C
= 25_C
"75
Continuous Drain Current (T = 175_C)
I
D
J
T
= 125_C
"66
"240
"75
280
C
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
mJ
W
c
T
C
= 25_C (TO-220AB and TO-263)
250
b
Maximum Power Dissipation
P
D
d
T
A
= 25_C (TO-263)
3.7
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
PCB Mount (TO-263)
40
62.5
0.6
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
Free Air (TO-220AB)
R
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB75N08-09L
New Product
Vishay Siliconix
SPECIFICATIONS (T =2_5C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 250 mA
75
1
(BR)DSS
DS
D
V
V
V
DS
= V , I = 250 mA
3
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
Gate-Body Leakage
I
"100
nA
GSS
V
DS
= 60 V, V = 0 V
1
GS
Zero Gate Voltage Drain Current
I
V
V
= 60 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 60 V, V = 0 V, T = 175_C
250
DS
GS
J
a
On-State Drain Current
I
V
DS
w 5 V, V = 10 V
120
A
D(on)
GS
V
= 10 V, I = 30 A
0.0076
0.009
0.011
GS
D
V
GS
= 4.5 V, I = 20 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
V
= 10 V, I = 30 A, T = 125_C
0.016
0.021
GS
D
J
= 10 V, I = 30 A, T = 175_C
GS
D
J
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
30
S
D
Dynamicb
Input Capacitance
C
C
5600
820
275
121
20
iss
Output Capacitance
pF
nC
V
= 0 V, V = 25 V, f = 1 MHz
DS
oss
GS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
150
g
c
Gate-Source Charge
Q
Q
V
DS
= 30 V, V = 10 V, I = 75 A
GS D
gs
gd
c
Gate-Drain Charge
25
c
Turn-On Delay Time
t
11
20
20
d(on)
c
Rise Time
t
r
10
V
DD
= 30 V, R = 0.47 W
L
ns
I
D
^ 75 A, V
= 10 V, R = 2.5 W
GEN G
c
Turn-Off Delay Time
t
107
22
200
40
d(off)
c
Fall Time
t
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
75
S
A
Pulsed Current
I
240
SM
a
I
= 75 A, V = 0 V
GS
Forward Voltage
V
1.0
80
1.3
120
9
V
ns
A
F
SD
Reverse Recovery Time
t
rr
RM(REC)
I
F
= 75 A, di/dt = 100 A/ms
Peak Reverse Recovery Current
Reverse Recovery Charge
I
4
Q
0.32
0.54
mC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB75N08-09L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
160
120
80
V
GS
= 10, 9, 8, 7, 6, 5 V
200
150
100
50
4 V
T
C
= 125_C
40
3 V
8
25_C
–55_C
0
0
0
2
4
6
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
200
160
120
80
0.012
0.010
0.008
0.006
0.004
0.002
0
T
C
= –55_C
V
GS
= 4.5 V
V
GS
= 10 V
25_C
125_C
40
0
0
20
V
40
60
80
100
0
20
40
60
80
100
120
– Gate-to-Source Voltage (V)
GS
I
– Drain Current (A)
D
Capacitance
Gate Charge
9000
7500
6000
4500
3000
1500
0
10
8
V
= 30 V
= 75 A
GS
C
iss
I
D
6
4
C
oss
2
C
rss
0
0
15
30
45
60
75
0
20
40
Q – Total Gate Charge (nC)
g
60
80
100
120
V
DS
– Drain-to-Source Voltage (V)
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB75N08-09L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
100
V
= 10 V
= 75 A
GS
I
D
10
T = 150_C
J
T = 25_C
J
1
0.1
–50 –25
0
25
50
75 100 125 150 175
0.2
0.4
V
0.6
0.8
1.0
1.2
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
Drain-Source Breakdown Voltage vs.
Junction Temperature
Avalanche Current vs. Time
300
100
90
80
70
60
100
I
AV
(A) @ T = 25_C
J
10
I
AV
(A) @ T = 150_C
J
1
–50 –25
0
25
50
75 100 125 150 175
0.0001
0.001
0.01
(Sec)
0.1
1
t
T
J
– Junction Temperature (_C)
in
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-4
SUP/SUB75N08-09L
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
300
100
90
75
60
45
30
15
0
10 ms
Limited
by r
DS(on)
100 ms
1 ms
10
10 ms
T
= 25_C
C
100 ms
dc
Single Pulse
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-5
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