SUM110N06-04L [VISHAY]
N-Channel 60-V (D-S) 200C MOSFET; N通道60 -V （D -S ） 200C MOSFET
| 型号： | SUM110N06-04L |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) 200C MOSFET |
| 文件： | 总5页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N06-04L
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
D 200_C Junction Temperature
V(BR)DSS (V)
rDS(on) (W)
ID (A)
0.0035 @ V = 10 V
GS
D New Low Thermal Resistance Package
APPLICATIONS
a
60
110
0.005 @ V = 4.5 V
GS
D Automotive
D
– Boardnet 42-V EPS and ABS
– Motor Drives
D High Current
D DC/DC Converters
TO-263
G
G
D S
Top View
SUM110N06-04L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
V
"20
a
T
= 25_C
= 125_C
110
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
110
C
A
Pulsed Drain Current
Avalanche Current
I
440
75
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
AR
280
mJ
c
T
= 25_C
437.5
C
b
Maximum Power Dissipation
P
W
D
d
T
A
= 25_C)
3.7
Operating Junction and Storage Temperature Range
T , T
J
–55 to 200
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
d
Junction-to-Ambient—PCBMount
R
40
thJA
thJC
C/W
Junction-to-Case (Drain)
R
0.4
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
www.vishay.com
1
SUM110N06-04L
New Product
Vishay Siliconix
SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 250 mA
60
1
(BR)DSS
DS
D
V
V
V
DS
= V , I = 250 mA
3
GS(th)
GS
D
V
= 0 V, V = "20 V
GS
Gate-Body Leakage
I
"100
nA
mA
DS
GSS
V
= 48 V, V = 0 V
1
DS
GS
V
V
= 48 V, V = 0 V, T = 125_C
50
10
Zero Gate Voltage Drain Current
I
DSS
DS
GS
J
= 48 V, V = 0 V, T = 200_C
mA
A
DS
GS
J
a
On-State Drain Current
I
V
w 5 V, V = 10 V
120
D(on)
DS
GS
V
= 10 V, I = 30 A
0.0028
0.004
0.0035
0.005
GS
D
V
GS
= 4.5 V, I = 20 A
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
V
= 10 V, I = 30 A, T = 125_C
0.0058
0.0088
GS
D
J
= 10 V, I = 30 A, T = 200_C
GS
D
J
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
30
S
D
Dynamicb
Input Capacitance
C
C
7500
1050
700
150
25
iss
Output Capacitance
pF
nC
V
= 0 V, V = 25 V, f = 1 MHz
DS
oss
GS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
220
g
c
Gate-Source Charge
Q
Q
V
DS
= 30 V, V = 10 V, I = 110 A
GS D
gs
gd
c
Gate-Drain Charge
45
c
Turn-On Delay Time
t
20
30
d(on)
c
Rise Time
t
135
80
200
120
220
r
V
= 30 V, R = 0.4 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
c
I
D
^ 110 A, V
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
150
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
110
440
S
A
Pulsed Current
I
SM
a
I
= 110 A, V = 0 V
GS
Forward Voltage
V
1.1
75
1.4
120
5
V
ns
A
F
SD
Reverse Recovery Time
t
rr
RM(REC)
I
F
= 110 A, di/dt = 100 A/ms
Peak Reverse Recovery Current
Reverse Recovery Charge
I
2.5
0.09
Q
0.25
mC
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
www.vishay.com
2
SUM110N06-04L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
250
200
150
100
50
V
GS
= 10 thru 5 V
200
150
100
50
4 V
T
= 125_C
C
25_C
3 V
8
–55_C
0
0
0
2
4
6
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
350
300
250
200
150
100
50
0.006
0.005
0.004
0.003
0.002
0.001
0.000
T
= –55_C
C
25_C
V
GS
= 4.5 V
125_C
V
GS
= 10 V
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
= 30 V
= 85 A
GS
I
D
C
iss
C
oss
4
C
rss
0
0
12
24
36
48
60
0
50
100
Q – Total Gate Charge (nC)
g
150
200
250
300
V
DS
– Drain-to-Source Voltage (V)
Document Number: 71704
www.vishay.com
S-20417—Rev. B, 08-Apr-02
3
SUM110N06-04L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0.0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25 50 75 100 125 150 175 200
0
0.3
V – Source-to-Drain Voltage (V)
SD
0.6
0.9
1.2
T
– Junction Temperature (_C)
J
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
80
75
70
65
60
I
D
= 10 mA
I
AV
(A) @ T = 25_C
100
A
10
1
I
AV
(A) @ T = 150_C
A
0.1
–50 –25
0
25 50 75 100 125 150 175 200
0.00001
0.0001
0.001
(Sec)
0.01
0.1
t
T
– Junction Temperature (_C)
in
J
Document Number: 71704
S-20417—Rev. B, 08-Apr-02
www.vishay.com
4
SUM110N06-04L
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
120
100
80
60
40
20
0
10 ms
100
10
100 ms
Limited
by r
DS(on)
1 ms
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100 125 150 175 200
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Ambient Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 71704
www.vishay.com
S-20417—Rev. B, 08-Apr-02
5
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