SUM110N06-3M4L_08 [VISHAY]
N-Channel 60-V (D-S) 175 °C MOSFET; N通道60 -V （ D- S） 175℃ MOSFET
| 型号： | SUM110N06-3M4L_08 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 60-V (D-S) 175 °C MOSFET |
| 文件： | 总6页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N06-3m4L
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
100 % Rg Tested
V(BR)DSS (V)
rDS(on) (Ω)
I
D (A)
•
RoHS
0.0034 at VGS = 10 V
0.0041 at VGS = 4.5 V
110a
COMPLIANT
60
D
TO-263
G
G
D S
Top View
S
N-Channel MOSFET
Ordering Information: SUM110N06-3m4L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
110a
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
ID
110a
440
75
TC = 125 °C
A
IDM
IAS
Pulsed Drain Current
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
EAS
L = 0.1 mH
TC = 25 °C
280
mJ
W
375b
3.75
PD
Maximum Power Dissipation
T
A = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
40
Unit
PCB Mountc
RthJA
Junction-to-Ambient
°C/W
RthJC
Junction-to-Case (Drain)
0.4
Notes:
a. Package limited.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
www.vishay.com
1
SUM110N06-3m4L
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
60
1
V
3
VDS = 0 V, VGS
=
20 V
100
1
nA
µA
VDS = 60 V, VGS = 0 V
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
10
V
DS = 60 V, VGS = 0 V, TJ = 175 °C
VDS ≥ 5 V, VGS = 10 V
mA
A
ID(on)
120
30
VGS = 10 V, ID = 30 A
0.0028
0.0033
0.0034
0.0041
0.0055
0.007
V
GS = 4.5 V, ID = 20 A
Drain-Source On-State Resistancea
rDS(on)
Ω
V
V
GS = 10 V, ID = 30 A, TJ = 125 °C
GS = 10 V, ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Forward Transconductancea
Dynamicb
gfs
S
Input Capacitance
Ciss
Coss
Crss
Qg
12900
1060
700
200
50
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
300
VDS = 30 V, VGS = 10 V, ID = 110 A
f = 1.0 MHz
Qgs
Qgd
Rg
nC
33
0.65
1.3
2
Ω
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(on)
tr
td(off)
tf
22
35
V
DD = 30 V, RL = 0.4 Ω
130
110
280
200
165
420
ns
ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
110
440
1.5
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 110 A, VGS = 0 V
1.0
55
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
82
IRM(REC)
Qrr
IF = 110 A, di/dt = 100 A/µs
3.6
0.1
5.4
0.22
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
SUM110N06-3m4L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
200
150
100
50
V
GS
= 10 thru 5 V
4 V
200
150
100
50
T
= 125 °C
C
3 V
25 °C
2
- 55 °C
4
2 V
0
0
0
2
4
6
8
10
0
1
3
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.006
0.005
0.004
0.003
0.002
0.001
0.000
480
400
320
240
160
80
T
= - 55 °C
C
25 °C
V
GS
= 4.5 V
125 °C
V
GS
= 10 V
0
0
20
40
60
80
100
120
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
20
16
12
8
18000
15000
12000
9000
6000
3000
0
V
= 30 V
= 110 A
GS
C
I
D
iss
4
C
oss
C
rss
0
0
50
100 150 200 250 300 350 400
0
5
10
15
20
25
30
35
40
Q
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
g
Gate Charge
Capacitance
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
www.vishay.com
3
SUM110N06-3m4L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.3
100
V
= 10 V
= 30 A
GS
I
D
2.0
1.7
1.4
1.1
0.8
0.5
T = 150 °C
J
T = 25 °C
J
10
1
- 50 - 25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
T
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
74
72
70
68
66
64
62
60
I
D
= 10 mA
I
(A) at T = 25 °C
A
AV
10
1
I
AV
(A) at T = 150 °C
A
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(s)
T
- Junction Temperature (°C)
J
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
www.vishay.com
4
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
SUM110N06-3m4L
Vishay Siliconix
THERMAL RATINGS
1000
300
10 µs
Limited by r
*
DS(on)
250
200
150
100
50
100
10
100 µs
1 ms
10 ms
100 ms
DC
1
Package Limited
T
= 25 °C
C
Single Pulse
0.1
0
0.1
1
10
100
0
25
50
75
100
125
150
175
V
- Drain-to-Source Voltage (V)
DS
T
- Case Temperature (°C)
C
* V
GS
minimum V at which r
is specified
GS
DS(on)
Maximum Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
10
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73036.
Document Number: 73036
S-80272-Rev. B, 11-Feb-08
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明