SUM110N08-05-E3 [VISHAY]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | SUM110N08-05-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N08-05
Vishay Siliconix
N-Channel 75-V (D-S) 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFETS
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Available
•
Low Thermal Resistance Package
110a
0.0048 at VGS = 10 V
75
RoHS*
COMPLIANT
APPLICATIONS
•
High Current
•
DC/DC Converters
D
TO-263
G
G
D S
Top View
Ordering Information: SUM110N08-05
SUM110N08-05-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
75
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
110a
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
ID
110a
440
75
TC = 125 °C
A
IDM
IAR
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
EAR
L = 0.1 mH
TC = 25 °C
280
mJ
W
437.5c
3.7
Maximum Power Dissipationb
PD
T
A = 25 °Cd
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
PCB Mountd
RthJA
Junction-to-Ambient
°C/W
RthJC
Junction-to-Case (Drain)
0.4
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71705
S-80108-Rev. D, 21-Jan-08
www.vishay.com
1
SUM110N08-05
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
75
V
Gate-Threshold Voltage
Gate-Body Leakage
2.5
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 75 V, VGS = 0 V
DS = 75 V, VGS = 0 V, TJ = 125 °C
DS = 75 V, VGS = 0 V, TJ = 175 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
rDS(on)
gfs
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
50
µA
A
250
120
30
VGS = 10 V, ID = 30 A
0.0038
0.0048
0.0084
0.0125
Drain-Source On-State Resistancea
V
V
GS = 10 V, ID = 30 A, TJ = 125 °C
GS = 10 V, ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Ω
S
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
7900
950
550
145
30
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 35 V, VGS = 10 V, ID = 110 A
Output Capacitance
Reverse Transfer Capacitance
pF
nC
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
215
Qgs
Qgd
td(on)
tr
45
25
40
200
65
300
100
250
V
DD = 35 V, RL = 0.4 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 110 A, VGEN = 10 V, RG = 2.5 Ω
td(off)
tf
165
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
110
440
1.5
120
7
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 110 A, VGS = 0 V
1.0
80
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = 85 A, di/dt = 100 A/µs
4
0.16
0.30
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71705
S-80108-Rev. D, 21-Jan-08
SUM110N08-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
200
150
100
50
250
V
= 10 thru 6 V
GS
200
150
100
50
5 V
4 V
T
= 125 °C
C
25 °C
3
- 55 °C
6
0
0
0
1
2
-
4
5
7
0
2
4
6
8
10
V
GS
Gate-to-Source Voltage (V)
V
-
Drain-to-Source Voltage (V)
DS
Output Characteristics
Transfer Characteristics
0.0075
300
250
200
150
100
50
T
= - 55 °C
C
0.0060
0.0045
0.0030
0.0015
0.0000
25 °C
V
GS
= 10 V
125 °C
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
-
Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
16
12
8
12000
10000
8000
6000
4000
2000
0
V
D
= 35 V
DS
= 85 A
I
C
iss
C
rss
4
C
oss
0
0
50
100
150
200
250
0
15
30
45
60
75
Q
-
Total Gate Charge (nC)
g
V
DS
-
Drain-to-Source Voltage (V)
Capacitance
Gate Charge
Document Number: 71705
S-80108-Rev. D, 21-Jan-08
www.vishay.com
3
SUM110N08-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
100
V
D
= 10 V
GS
= 30 A
I
2.5
2.0
1.5
1.0
0.5
0.0
T = 150 °C
J
T = 25 °C
J
10
1
0
- 50 - 25
0
25
50
75 100 125 150 175
0.3
0.6
0.9
1.2
T
-
Junction Temperature (°C)
J
V
SD
-
Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
100
95
90
85
80
75
I
= 10 mA
D
I
AV
(A) at T = 25 °C
A
10
1
I
AV
(A) at T = 150 °C
A
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(s)
T
- Junction Temperature (°C)
J
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
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4
Document Number: 71705
S-80108-Rev. D, 21-Jan-08
SUM110N08-05
Vishay Siliconix
THERMAL RATINGS
1000
100
10
120
100
80
10 µs
100 µs
Limited
by r
I
D
= 250 µA
*
DS(on)
60
40
20
0
1 ms
10 ms
100 ms
DC
1
T
= 25 °C
Single Pulse
C
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
- Ambient Temperature (°C)
C
* V
GS
minimum V at which r
is specified
GS
DS(on)
Maximum Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
- 4
- 3
- 2
- 1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71705.
Document Number: 71705
S-80108-Rev. D, 21-Jan-08
www.vishay.com
5
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Revision: 12-Mar-12
Document Number: 91000
1
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