首页 |元器件品牌

SUM110N06-06 [VISHAY]

N-Channel 60-V (D-S), 175C MOSFET; N通道60 -V （D -S ） ， 175℃ MOSFET
SUM110N06-06
型号： SUM110N06-06
厂家： VISHAY    VISHAY
描述：

N-Channel 60-V (D-S), 175C MOSFET
N通道60 -V （D -S ） ， 175℃ MOSFET
文件： 总5页 (文件大小：45K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SUM110N06-06  
Vishay Siliconix  
New Product  
N-Channel 60-V (D-S), 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Junction Temperature  
APPLICATIONS  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
60  
0.006  
110  
D Automotive Applications Such As:  
- ABS  
- EPS  
- Motor Drives  
D Industrial  
D
TO-263  
G
G
D S  
Top View  
S
N-Channel MOSFET  
SUM110N06-06  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
"20  
V
a
T
= 25_C  
= 125_C  
110  
C
Continuous Drain Current  
(T = 175_C)  
J
I
D
T
78  
300  
70  
C
A
Pulsed Drain Current  
I
DM  
Avalanche Current  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
AR  
245  
mJ  
c
T
= 25_C  
= 25_C  
230  
C
Power Dissipation  
P
D
W
d
T
A
3.75  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
d
Junction-to-Ambient  
Junction-to-Case  
PCB Mount  
R
40  
thJA  
thJC  
_
C/W  
R
0.65  
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 72082  
S-22246—Rev. A, 25-Nov-02  
www.vishay.com  
1
SUM110N06-06  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= 0 V, I = 250 mA  
60  
(BR)DSS  
GS  
D
V
V
V
DS  
= V , I = 250 mA  
2.0  
3.0  
4.0  
"100  
1
GS(th)  
GS  
D
I
V
DS  
= 0 V, V = "20 V  
nA  
GSS  
GS  
V
= 48 V, V = 0 V  
GS  
DS  
V
V
= 48 V V = 0 V, T = 125_C  
50  
Zero Gate Voltage Drain Current  
I
mA  
DS  
,
GS  
J
DSS  
= 48 V, V = 0 V, T = 175_C  
250  
DS  
GS  
J
a
On-State Drain Current  
I
V
DS  
= 5 V, V = 10 V  
120  
30  
A
D(on)  
GS  
V
GS  
= 10 V, I = 30 A  
0.0048  
0.006  
0.0105  
0.013  
D
a
V
GS  
= 10 V, I = 30 A, T = 125_C  
Drain-Source On-State Resistance  
r
W
D
J
DS(on)  
V
GS  
= 10 V, I = 30 A, T = 175_C  
D
J
a
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 30 A  
S
D
Dynamicb  
Input Capacitance  
C
6000  
720  
370  
90  
iss  
Output Capacitance  
C
oss  
V = 0 V, V = 25 V, f = 1 MHz  
GS DS  
pF  
nC  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
135  
g
c
Gate-Source Charge  
Q
Q
30  
V
DS  
= 30 V V = 10 V, I = 75 A  
gs  
gd  
,
GS  
D
c
Gate-Drain Charge  
25  
c
Turn-On Delay Time  
t
20  
30  
140  
60  
d(on)  
c
Rise Time  
t
r
90  
V
= 30 V, R = 0.47 W  
L
= 10 V, R = 2.5 W  
GEN G  
DD  
ns  
c
I
D
^ 75 A, V  
Turn-Off Delay Time  
t
40  
d(off)  
c
Fall Time  
t
f
10  
20  
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
110  
300  
1.5  
S
A
Pulsed Current  
I
SM  
a
Forward Voltage  
V
SD  
I
F
= 75 A , V = 0 V  
1.0  
75  
V
ns  
A
GS  
Reverse Recovery Time  
t
125  
5
rr  
RM(REC)  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
3
I
F
= 75 A, di/dt = 100 A/ms  
Q
0.113  
0.313  
mC  
rr  
Notes  
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 72082  
S-22246—Rev. A, 25-Nov-02  
www.vishay.com S FaxBack 408-970-5600  
2
SUM110N06-06  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
250  
250  
200  
150  
100  
50  
6 V  
200  
150  
100  
50  
V
GS  
= 10 thru 7 V  
5 V  
T
= 125_C  
C
25_C  
3, 4 V  
-55 _C  
0
0
0
2
4
6
8
10  
0
1
2
3
4
5
6
7
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
150  
120  
90  
60  
30  
0
0.010  
0.008  
0.006  
0.004  
0.002  
0.000  
T
= -55_C  
C
25_C  
125_C  
V
GS  
= 10 V  
0
15  
30  
45  
60  
75  
90  
0
20  
40  
60  
80  
100  
120  
V
GS  
- Gate-to-Source Voltage (V)  
I
D
- Drain Current (A)  
Capacitance  
Gate Charge  
20  
16  
12  
8
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
V
I
= 30 V  
= 75 A  
DS  
D
C
iss  
4
C
oss  
C
rss  
0
0
10  
20  
30  
40  
50  
60  
0
30  
60  
90  
120  
150  
180  
V
DS  
- Drain-to-Source Voltage (V)  
Q
g
- Total Gate Charge (nC)  
Document Number: 72082  
www.vishay.com  
S-22246—Rev. A, 25-Nov-02  
3
SUM110N06-06  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100  
V
= 10 V  
= 30 A  
GS  
I
D
T = 150_C  
T = 25_C  
J
J
10  
1
-50 -25  
0
25  
50  
75 100 125 150 175  
0
0.3  
0.6  
0.9  
1.2  
T
- Junction Temperature (_C)  
V
SD  
- Source-to-Drain Voltage (V)  
J
Drain Source Breakdown vs.  
Junction Temperature  
Avalanche Current vs. Time  
1000  
80  
76  
72  
68  
64  
60  
I
D
= 10 mA  
100  
I
AV  
(A) @ T = 25_C  
A
10  
1
I
AV  
(A) @ T = 150_C  
A
0.1  
-50 -25  
0
25  
50  
75 100 125 150 175  
0.00001  
0.0001  
0.001  
0.01  
(Sec)  
0.1  
1
t
in  
T
- Junction Temperature (_C)  
J
Document Number: 72082  
S-22246—Rev. A, 25-Nov-02  
www.vishay.com S FaxBack 408-970-5600  
4
SUM110N06-06  
Vishay Siliconix  
New Product  
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area, Junction-to-Case  
1000  
120  
100  
80  
60  
40  
20  
0
10 ms  
100  
10  
100 ms  
Limited  
by r  
DS(on)  
1 ms  
10 ms  
dc, 100 ms  
1
T
= 25_C  
C
Single Pulse  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
- Drain-to-Source Voltage (V)  
T
- Ambient Temperature (_C)  
C
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
- 4  
- 3  
- 2  
- 1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72082  
www.vishay.com  
S-22246—Rev. A, 25-Nov-02  
5

相关型号：

SUM110N06-3M4L

 N-Channel 60-V (D-S) 175C MOSFET
VISHAY

SUM110N06-3M4L-E3

 N-Channel 60-V (D-S) 175 °C MOSFET
VISHAY

SUM110N06-3M4L_08

 N-Channel 60-V (D-S) 175 °C MOSFET
VISHAY

SUM110N06-3M9H

 Low Thermal Resistance Package
VISHAY

SUM110N08-05

 N-Channel 75-V (D-S) 200∑C MOSFET
VISHAY

SUM110N08-05-E3

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

SUM110N08-07

 N-Channel 75-V (D-S) MOSFET
VISHAY

SUM110N08-07L

 N-Channel 75-V (D-S), 175∑C MOSFET
VISHAY

SUM110N08-07P

 N-Channel 75-V (D-S) MOSFET
VISHAY

SUM110N08-07P-E3

 N-Channel 75-V (D-S) MOSFET
VISHAY

SUM110N08-10

 N-Channel 75-V (D-S) MOSFET
VISHAY

SUM110N08-10-E3

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY
©2020 ICPDF网 联系我们和版权申明