FMOSAB48N04-Q1
更新时间：2025-04-28 11:17:32
品牌：FORMOSA
描述：Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 48; EAS(mJ) : 26; IDSS@VDSS(V
概述
数据手册FMOSAB48N04-Q1 概述
Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 48; EAS(mJ) : 26; IDSS@VDSS(V
FMOSAB48N04-Q1 数据手册
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PDF下载N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
List
List.................................................................................................1
Package outline.................................................................................2
Features..........................................................................................2
Applications......................................................................................2
Mechanical data................................................................................2
Maximum ratings ..............................................................................2
Electrical characteristics...................................................................3
Rating and characteristic curves.....................................................4~5
Pinning information............................................................................6
Marking...........................................................................................6
Suggested solder pad layout...............................................................6
Packing information...........................................................................7
Reel packing.....................................................................................8
Suggested thermal profiles for soldering processes..............................8
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 1
DS-2311L51-AEC
-
A
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
48A 40V N-Channel Enhancement
Mode Power MOSFET
Package outline
Features
• VDS = 40V, ID = 48A.
T3333P8
• RDS(ON) ≤ 8 mΩ, @VGS = 10V, ID = 20A.
• RDS(ON) ≤ 10 mΩ, @VGS = 4.5V, ID = 15A.
• Reliable and rugged.
0.126(3.20)
0.114(2.90)
• 100% UIS and Rg tested.
• Qualified to AEC-Q101 standards for high reliability.
• Lead-free parts meet RoHS requirements.
• Suffix ”-H” indicates halogen free part, ex: FMOSAB48N04-Q1-H.
0.026(0.65)Typ.
0.033(0.85)
0.026(0.65)
0.006(0.15)Max.
Applications
• Portable equipment.
0.016(0.40)
0.008(0.20)
0.020(0.50)
0.012(0.30)
0.102(2.60)
0.091(2.30)
• Battery powered system.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant.
• Case : Molded plastic, T3333P8.
• Mounting Position : Any.
0.020(0.50)Max.
Dimensions in inches and (millimeters)
Maximum ratings (At TJ=25oC unless otherwise noted)
Parameter
Symbol
Ratings
40
Unit
V
Drain-Source voltage
Gate-Source voltage
VDS
VGS
±20
48
V
(TC=25ºC)
(TC=100ºC)
(TA=25ºC)
(TA=100ºC)
(TC=25ºC)
(TC=25ºC)
(L=0.1mH)
(L=0.5mH)
(L=0.1mH)
(L=0.5mH)
(TC=25ºC)
(TC=100ºC)
(TA=25ºC)
(TA=100ºC)
34
Continuous drain current
ID
A
12.5
1.8
121
12
Pulsed drain current (Note1)
IDM
IS
A
A
Diode continuous forward current
23
Single pulsed avalanche current (Note2)
Single pulsed avalanche energy (Note2)
IAS
A
12
26
EAS
mJ
36
37.5
18.8
2.5
1.8
60
Power dissipation
PD
W
Thermal resistance,Junction to ambient (Note3)
Thermal resistance,Junction to case
Operating junction temperature
RθJA
RθJC
TJ
°C/W
4
+175
°C
°C
Storage temperature range
TSTG
-55 to +175
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 2
DS-2311L51-AEC
-
A
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
Electrical characteristics (At TJ=25oC unless otherwise noted)
Parameter
Symbol
Conditions
Min
40
Typ
Max
Unit
Off characteristics
Drain-Source breakdown voltage
Drain-Source leakage current
Gate-Source leakage current
BVDSS ID=250μΑ, VGS=0V
V
IDSS
IGSS
VDS=32V, VGS=0V
VGS=±20V, VDS=0V
1
μΑ
nΑ
±100
On characteristics
Gate threshold voltage
VGS(th) VDS=VGS, ID=250μA
1.2
1.7
6.7
8
2.4
8
V
mΩ
S
VGS=10V, ID=20Α
RDS(ON)
Static drain-source on-resistance (Note4)
VGS=4.5V, ID=15Α
10
Forward transconductance
Dynamic characteristics (Note5)
Input capacitance
gFS
VDS=5V, IDS=5A
16
Ciss
Coss
Crss
RG
1820
150
120
2.2
Output capacitance
VDS=20V, VGS=0V, f=1.0ΜΗz
VGS=0V, VDS=0V, f=1.0MHz
VGS=4.5V, VDS=20V, ID=20A
VGS=10V, VDS=20V, ID=20A
pF
Ω
Reverse transfer capacitance
Gate resistance
Switching characteristics
22
44
2.6
10
5.8
22
38
21
Total gate charge
Qg
nC
Gate-Source charge
Gate-Drain Charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qgs
Qgd
td(on)
tr
VDS=20V, VGS=10V, RG=6Ω, ID=1A
ns
td(off)
tf
Drain-Source diode characteristics and maximum ratings
Drain-Source diode forward voltage (Note4)
Body diode reverse recovery time
VSD
trr
ISD=1A, VGS=0V
0.7
16.8
8.9
1.1
V
ns
nC
IF=1A,VR=20V, dIF/dt=100A/μs
Body diode reverse recovery charge
Qrr
Note : 1. Maximum current is limited by junction temperature.
2. UIS tested and pulse width are limited by maximum junction temperature 175°C.
3. Surface mounted on 1in2 FR-4 board with 1oz.
4. Pulse test (pulse width ≤ 300μs, duty cycle ≤ 2%).
5. Guaranteed by design, not subject to production testing.
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 3
DS-2311L51-AEC
-
A
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
Rating and characteristic curves
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 4
DS-2311L51-AEC
-
A
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
Rating and characteristic curves
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 5
DS-2311L51-AEC
-
A
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
Packing information
P
0
P
1
d
E
F
W
B
A
P
D
2
D
1
T
C
W
1
D
unit:mm
Item
Symbol
Tolerance
T3333P8
Carrier width
Carrier length
Carrier depth
Sprocket hole
A
B
C
d
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.55
3.55
1.10
1.50
330.00
100.00
-
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
D
D
D
D
D
E
F
1
1
2
-
13.00
1.75
5.50
8.00
4.00
2.00
0.23
12.00
17.60
P
P
P
T
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
0
1
W
W
Reel width
1
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 6
DS-2311L51-AEC
-
A
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
Pinning information
Pin
Simplified outline
Symbol
D
8
D
D
6
D
8
7
6
5
5
6
7
8
7
5
Pin 1, 2, 3
Pin 4
Source
Gate
Pin 5, 6, 7, 8 Drain
1
2
3
4
1
2
3
4
4
3
2
1
S
S
S
G
Top view
Bottom view
Marking
Type number
Marking code
FMOSAB48N04-Q1
40080Q
YWWSSA
Suggested solder pad layout
T3333P8
0.40
2.49
Note:
1.Controlling dimension:in millimeters.
2.General tolerance:±0.05mm.
3.The pad layout is for reference purposes only.
0.65
0.40
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 7
DS-2311L51-AEC
-
A
N-Channel SMD Power MOSFET
Formosa MS
FMOSAB48N04-Q1
Reel packing
COMPONENT
SPACING
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
REEL
(pcs)
BOX
(pcs)
PACKAGE
T3333P8
CARTON
(pcs)
REEL SIZE
13"
(m/m)
5,000
8.0
10,000
355*335*38
330
350*330*360
80,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
http://www.formosams.com
TEL:886-2-22696661
Formosa MS FAX:886-2-22696141
Document ID
DS-2311L51-AEC
Issued Date Revised Date Revision
2024/01/26
Page
8
Page 8
-
A
FMOSAB48N04-Q1 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FMOSAB51P03-H | FORMOSA | Status : Active; Package : T3333P8; ESD : Yes; BVDSS(V) : -30; ID(A) : -51.8; PD(W) : 41.7; IDSS@V | 获取价格 |
|
| FMOSAB52N06-H | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 60; ID(A) : 52; PD(W) : 30; EAS(mJ) : 80; | 获取价格 |
|
| FMOSAB55P02-H | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : -20; ID(A) : -55; PD(W) : 38; IDSS@VDSS(V | 获取价格 |
|
| FMOSAB57N04-Q1 | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 57; PD(W) : 30; EAS(mJ) : 36; | 获取价格 |
|
| FMOSAB59N04-Q1 | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 59; PD(W) : 37; EAS(mJ) : 96; | 获取价格 |
|
| FMOSAB59N06-Q1 | FORMOSA | Status : Active; Package : T3030P8; ESD : No; BVDSS(V) : 60; ID(A) : 59; PD(W) : 39; EAS(mJ) : 94; | 获取价格 |
|
| FMOSAB60N02-H | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 20; ID(A) : 60; PD(W) : 39; EAS(mJ) : 121 | 获取价格 |
|
| FMOSAB64N03-H | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 30; ID(A) : 64; PD(W) : 31; EAS(mJ) : 39; | 获取价格 |
|
| FMOSAB68N08-H | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 80; ID(A) : 68; PD(W) : 35.7; EAS(mJ) : 5 | 获取价格 |
|
| FMOSAB99N04-H | FORMOSA | Status : Active; Package : T3333P8; ESD : No; BVDSS(V) : 40; ID(A) : 99; PD(W) : 52; EAS(mJ) : 79; | 获取价格 |
|
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