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其他晶体管
射频双极晶体管
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小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
2N1906 | ![]() |
功率双极晶体管 | Trans GP BJT NPN 100V 10A 3-Pin TO-61 | ![]() |
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2N1907 | ![]() |
功率双极晶体管 | 20A, 40V, PNP, Ge, POWER TRANSISTOR, TO-3 | ![]() |
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2N1908 | ![]() |
功率双极晶体管 | 20A, 50V, PNP, Ge, POWER TRANSISTOR, TO-3 | ![]() |
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2N1937E3 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN | ![]() |
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2N1983 | ![]() |
功率双极晶体管 | Diode TP-39 二极管TP- 39 |
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2N1984 | ![]() |
功率双极晶体管 | NPN SWITCHING TRANSISTORS NPN开关晶体管 |
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2N2034A | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 1A I(C), NPN, | ![]() |
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2N2035 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, | ![]() |
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2N2109 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2110 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2111 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2112 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2113 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2114 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2116 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2117 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2118 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2123 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2124 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2125 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2126 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2130 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2131 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2132 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2133 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 30A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, | ![]() |
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2N2147 | ![]() |
功率双极晶体管 | Trans GP BJT NPN 100V 2A 4-Pin TO-111 | ![]() |
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2N2148 | ![]() |
功率双极晶体管 | Trans GP BJT NPN 100V 2A 4-Pin TO-111 | ![]() |
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2N2150 | ![]() |
功率双极晶体管 | NPN SWITCHING TRANSISTORS NPN开关晶体管 |
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2N2150 | ![]() |
功率双极晶体管 | NPN POWER SILICON TRANSISTOR NPN功率硅晶体管 |
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2N2150 | ![]() |
功率双极晶体管 | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, | ![]() |
功率双极晶体管 热门型号
- KSC5024-O
- KSD1589Y
- KSC5402DTF
- KSD1408YTU
- KSD1273PTU
- KSC5803YDTBTU
- KSH32CI
- KSC5026O
- KSC5021FOTU
- KSD569O
- KSD560YTU
- KSC3503D
- KSH45H11-I
- KSD1362O
- KSC5302DMSTU
- KSC5026R
- KSC3953DSTU_NL
- KSC2688Y
- KSC2682YS
- KSH350-I
- KSE700S
- KSD5701TBTU
- KSD362-N
- KSD1406YTU
- KSE13009LTU
- KSD363RTU
- KSC5802DTBTU
- KSC5025O
- KSC2333YTU
- KSB601YTU_NL
- KSD560RTSTU
- KSD363OTU
- KSC5030F-R
- KSD288YTU
- KSC5021F-O
- KSD2012YTU
- KSD1692OSTU
- KSH42C-I
- KSC2334YTU
- KSH30C-I
- KSC2690YSTU
- KSB798G
- KSB601YTU
- KSB1151G
- KSB1023TU
- KSC3569YTU
- KSC2688YS
- KSC5386YDTBTU
- KSC3569Y
- KSB1015Y
- KSA1962RTU
- KSA1962O
- KSA1614R
- KSD1408R
- KSB1149YS
- KSC2333R
- KSB1149YSTU
- KSB1097YTU
- KSC5026MRS
- KSC5042TU
- KSC5021-R
- KSC5020R
- KSC5200RTU
- KSC2073H2TU
- KSC5039FTU
- KSB1151Y
- KSC3502ESTU
- KSC1507G
- KSC2518R
- KSC2335R
- KSA1242OTU
- KSA1962Y
- KSA1304OTU
- KSA1406C
- KSA1220AY
- KSB1017R
- KSA1943Y
- KSA940TSTU
- KSA473-O
- KSA473O
- KSA1220AYSTSTU
- KSA1220YSTU
- KSA1010RTU
- KD224503HB
- KD221K05HB
- JANS2N3440S
- HR1L3N-AZ
- HD1F3P-AZ
- FZT657TC
- FZT649TA
- FZT600ATA
- FZT600ATA
- FZT949QTA
- FZT853TC
- FZT491ATC
- FZT792ATC
- FZT948TC
- FZT755TC
- FZT755TA
- FZT600BTA
什么是功率双极晶体管
- 功率双极晶体管(Bipolar Junction Transistor,简称BJT),是一种基于半导体材料的电子元件。它可以被用作放大器、开关和其他电路中的信号处理部件。
功率双极晶体管中,集电区和发射区构成了一个PN结,而基区夹在这两者之间。当一个电压被施加在基区时,它能够控制PN结的电阻,从而控制电流流过晶体管。这个过程叫做“注入”(injection),并且它使得电流能够受到控制,从而使晶体管可以用作放大器或开关。