功率双极晶体管
图片 型号 文档 类别 描述 品牌 供应商
2N2657 功率双极晶体管 Trans GP BJT NPN 60V 5A 3-Pin TO-5
2N2658 功率双极晶体管 SMALL SIGNAL TRANSISTORS
小信号晶体管
2N2658 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
2N2658LEADFREE 功率双极晶体管 Power Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN
2N2770 功率双极晶体管 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
20斯特恩AVE SPRINGFIELD ,新泽西州07081 U.S.A
2N2777 功率双极晶体管 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
20斯特恩AVE SPRINGFIELD ,新泽西州07081 U.S.A
2N2779 功率双极晶体管 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
20斯特恩AVE SPRINGFIELD ,新泽西州07081 U.S.A
2N2779 功率双极晶体管 Power Bipolar Transistor, 30A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
2N2779E3 功率双极晶体管 Power Bipolar Transistor, 30A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
2N2780 功率双极晶体管 Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
2N2780E3 功率双极晶体管 Power Bipolar Transistor, 30A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
2N2811 功率双极晶体管 SILICON PLANAR NPN POWER TRANSISTORS
硅平面NPN功率晶体管
2N2812 功率双极晶体管 Trans GP BJT NPN 60V 10A 3-Pin TO-61
2N2813 功率双极晶体管 Trans GP BJT NPN 80V 10A 3-Pin TO-61
2N2813E3 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N2814E3 功率双极晶体管 Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
2N2828 功率双极晶体管 Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin,
2N2851 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
2N2851 功率双极晶体管 Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-52VAR, 3 PIN
2N2851-2 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin,
2N2858 功率双极晶体管 Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
2N2859 功率双极晶体管 Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
2N2876 功率双极晶体管 SILICON N-P-N PLANAR TRANSISTOR
硅N-P -N平面晶体管
2N2876 功率双极晶体管 Power Bipolar Transistor, 2.5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-60, Metal, 3 Pin, TO-60, 3 PIN
2N2876E3 功率双极晶体管 Power Bipolar Transistor, 2.5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-60, Metal, 3 Pin, TO-60, 3 PIN
2N2877 功率双极晶体管 Trans GP BJT NPN 60V 5A 4-Pin TO-111
2N2877E3 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN
2N2878 功率双极晶体管 Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN
2N2878 功率双极晶体管 Trans GP BJT NPN 60V 5A 3-Pin TO-63
2N2879 功率双极晶体管 Trans GP BJT NPN 80V 5A 4-Pin TO-111
Total:6001678910111213141516...20
总600条记录,每页显示30条记录分20页显示。

什么是功率双极晶体管

    功率双极晶体管(Bipolar Junction Transistor,简称BJT),是一种基于半导体材料的电子元件。它可以被用作放大器、开关和其他电路中的信号处理部件。 功率双极晶体管中,集电区和发射区构成了一个PN结,而基区夹在这两者之间。当一个电压被施加在基区时,它能够控制PN结的电阻,从而控制电流流过晶体管。这个过程叫做“注入”(injection),并且它使得电流能够受到控制,从而使晶体管可以用作放大器或开关。