IRL541 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 24A I(D) | TO-220AB ; 晶体管| MOSFET | N沟道| 80V V( BR ) DSS | 24A I( D) | TO- 220AB\n型号: | IRL541 |
厂家: | ETC |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 24A I(D) | TO-220AB
|
文件: | 总5页 (文件大小:244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRL5602S
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
94
INFINEON
IRL5602SPBF
HEXFET Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
24
INFINEON
IRL5602STRL
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
43
ETC
IRL5602STRR
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
37
ETC
IRL5NJ024
LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
110
INFINEON
IRL5NJ7404
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNELWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
65
INFINEON
IRL5NJ7413
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 30V, N-CHANNELWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
27
INFINEON
IRL5Y024CM
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
64
INFINEON
IRL5Y7413CM
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
20
INFINEON
IRL60B216
Brushed Motor drive applicationsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
3
INFINEON
IRL60B216_15
Brushed Motor drive applicationsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
INFINEON
IRL60S216
Half-bridge and full-bridge topologiesWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IRL60SC216
Infineon’s latest logic level 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IRL60SL216
Half-bridge and full-bridge topologiesWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
0
INFINEON
IRL610
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
17
FAIRCHILD
IRL610
Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
1
SAMSUNG
IRL610A
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
28
FAIRCHILD
IRL610AJ69Z
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
2
FAIRCHILD
IRL610J69Z
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
8
FAIRCHILD
IRL610S
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
-
24
ETC
©2020 ICPDF网 联系我们和版权申明