Q62702-F1051 [INFINEON]
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.); NPN硅RF晶体管（对于低失真宽带放大器最高集电极电流1 GHz的2 mA至30毫安。 ）
| 型号： | Q62702-F1051 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
| 文件： | 总9页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon RF Transistor
BFR 93P
● For low-distortion broadband amplifiers up to 1 GHz
at collector currents from 2 mA to 30 mA.
● CECC-type available: CECC 50002/256.
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BFR 93P
GG
Q62702-F1051
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
15
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
20
2.5
IC
50
mA
Base current
I
B
10
Total power dissipation, TS ≤ 65 ˚C3)
Junction temperature
Ambient temperature range
Storage temperature range
P
tot
280
150
mW
˚C
T
T
T
j
A
– 65 … + 150
– 65 … + 150
stg
Thermal Resistance
Junction - ambient2)
R
R
th JA
th JS
≤ 385
≤ 305
K/W
Junction - soldering point3)
1)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
2)
3)
TS is measured on the collector lead at the soldering point to the pcb.
BFR 93P
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CE0
15
–
–
V
IC
= 1 mA, I
B
= 0
Collector-base cutoff current
I
CB0
EB0
µA
V
CB = 10 V, I
E
E
= 0
= 0
–
–
–
–
0.05
10
V
CB = 20 V, I
Emitter-base cutoff current
= 0
I
–
–
100
VEB = 2.5 V, I
C
DC current gain
= 25 mA, VCE = 5 V
h
FE
30
–
100
0.2
–
–
IC
Collector-emitter saturation voltage
= 50 mA, I = 5 mA
V
CEsat
0.5
V
IC
B
BFR 93P
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC Characteristics
Transition frequency
f
T
GHz
pF
I
C
= 30 mA, VCE = 5 V, f = 200 MHz
= 50 mA, VCE = 5 V, f = 200 MHz
–
–
5
4.7
–
–
IC
Collector-base capacitance
C
C
C
C
F
cb
–
–
–
–
0.6
0.28
2.1
0.9
0.75
V
CB = 10 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
ce
–
–
–
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Input capacitance
= i
ibo
obs
V
EB = 0.5 V, I
C
c
= 0, f = 1 MHz
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Noise figure
dB
IC
IC
IC
= 10 mA, VCE = 8 V, f = 10 MHz,Z
= 5 mA, VCE = 8 V, f = 500 MHz,Z
= 10 mA, VCE = 8 V, f = 800 MHz, Z
S
S
= 75 Ω
= ZSopt
–
–
–
1.7
1.9
2.4
–
–
–
S
= 50 Ω
Power gain
= 25 mA, VCE = 8 V, f = 800 MHz,
Gpe
–
13
–
IC
ZS
= ZSopt, Z = ZLopt
L
I S21e I 2
Transducer gain
= 25 mA, VCE = 8 V, f = 500 MHz, Z
–
–
15.8
240
–
–
IC
0
= 50 Ω
Linear output voltage
Vo1 = Vo2
mV
two-tone intermodulation test
I
f1
C
= 25 mA, VCE = 8 V, dIM = 60 dB,
= 806 MHz, f = 810 MHz, Z = Z = 50 Ω
2
S
L
Third order intercept point
= 25 mA, VCE = 8 V, f = 800 MHz
IP3
–
30.5
–
dBm
IC
BFR 93P
Total power dissipation Ptot = f (T
A
*; T
S
)
Transition frequency f
T
= f (I )
C
* Package mounted on alumina
VCE = 5 V, f = 200 MHz
Collector-base capacitance Ccb = f (VCB
)
VBE = vbe = 0, f = 1 MHz
BFR 93P
Common Emitter Noise Parameters
Γ
opt
f
Fmin
Gp
(Fmin
)
RN
N
F
50 Ω
Gp(F50Ω)
GHz
dB
dB
MAG
ANG
Ω
–
dB
dB
IC
= 2 mA, VCE = 8 V, Z
0
= 50 Ω
0.01 1.0
–
(Z
S
= 150 Ω)
= 90 Ω)
–
–
1.6
–
IC
= 10 mA, VCE = 8 V, Z = 50 Ω
0
0.01
0.8
1.5
2.3
–
–
(Z
(Z
S
–
–
–
–
1.7
2.4
–
–
S
= ZSopt)
Noise figure F = f (Z
S
)
Noise figure F = f (I )
C
V
CE = 8 V, f = 10 MHz
VCE = 8 V, f = 800 MHz, ZLopt (G)
BFR 93P
Common Emitter S Parameters
f
S11
S21
S12
S22
GHz
MAG
ANG
= 50 Ω
MAG
ANG
MAG
ANG
MAG
ANG
IC
= 5 mA, VCE = 8 V, Z
0
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.74
0.51
0.40
0.32
0.31
0.31
0.31
0.32
0.33
0.35
– 34
– 92
– 125
– 157
– 171
177
166
156
146
137
12.96
7.50
5.13
3.35
2.71
2.32
2.05
1.84
1.64
1.52
143
113
97
78
72
65
59
52
47
42
0.03
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
70
55
55
57
59
60
62
61
61
61
0.87
0.65
0.54
0.48
0.48
0.46
0.45
0.45
0.45
0.44
– 14
– 31
– 33
– 32
– 35
– 38
– 41
– 46
– 49
– 52
S11, S22 = f (f)
S12, S21 = f (f)
I
C
= 5 mA, VCE = 8 V, Z
0
= 50 Ω
IC
= 5 mA, VCE = 8 V, Z
0
= 50 Ω
BFR 93P
Common Emitter S Parameters (continued)
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
IC
= 10 mA, VCE = 8 V, Z
0
= 50 Ω
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.58
0.37
0.30
0.25
0.25
0.26
0.26
0.28
0.29
0.31
– 49
– 108
– 139
– 170
180
169
160
151
142
18.73
9.17
5.92
3.85
3.09
2.63
2.33
2.07
1.84
1.72
133
105
90
76
70
64
58
52
48
43
0.03
0.05
0.07
0.10
0.13
0.15
0.17
0.20
0.22
0.24
68
60
63
65
65
64
64
62
61
60
0.77
0.53
0.45
0.41
0.40
0.39
0.38
0.38
0.38
0.36
– 19
– 32
– 32
– 31
– 34
– 37
– 40
– 44
– 47
– 49
133
S11, S22 = f (f)
S12, S21 = f (f)
I
C
= 10 mA, VCE = 8 V, Z
0
= 50 Ω
IC
= 10 mA, VCE = 8 V, Z
0
= 50 Ω
BFR 93P
Common Emitter S Parameters (continued)
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
IC
= 20 mA, VCE = 8 V, Z
0
= 50 Ω
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.41
0.28
0.25
0.23
0.23
0.25
0.25
0.27
0.28
0.30
– 64
– 123
– 151
– 179
172
164
155
147
139
22.91
9.89
6.24
4.03
3.22
2.74
2.41
2.14
1.92
1.79
123
98
86
74
69
63
57
51
47
42
0.02
0.05
0.07
0.11
0.13
0.16
0.18
0.20
0.23
0.25
67
66
68
68
68
66
66
63
61
60
0.67
0.46
0.40
0.37
0.37
0.35
0.35
0.35
0.35
0.33
– 22
– 30
– 30
– 28
– 32
– 35
– 38
– 43
– 46
– 48
131
S11, S22 = f (f)
S12, S21 = f (f)
I
C
= 20 mA, VCE = 8 V, Z
0
= 50 Ω
IC
= 20 mA, VCE = 8 V, Z
0
= 50 Ω
BFR 93P
Common Emitter S Parameters (continued)
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
IC
= 25 mA, VCE = 8 V, Z
0
= 50 Ω
0.1
0.3
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.37
0.26
0.24
0.22
0.23
0.24
0.25
0.27
0.28
0.30
– 68
– 127
– 154
179
170
162
153
146
138
130
23.71
9.89
6.20
3.98
3.18
2.71
2.37
2.11
1.89
1.77
120
97
85
73
68
62
57
51
47
42
0.02
0.05
0.07
0.11
0.13
0.16
0.18
0.20
0.23
0.25
67
67
70
69
68
66
66
63
62
60
0.64
0.44
0.39
0.37
0.37
0.36
0.36
0.35
0.35
0.34
– 22
– 29
– 28
– 27
– 31
– 35
– 37
– 42
– 46
– 48
S11, S22 = f (f)
S12, S21 = f (f)
I
C
= 25 mA, VCE = 8 V, Z
0
= 50 Ω
IC
= 25 mA, VCE = 8 V, Z
0
= 50 Ω
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